IPI60R385CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=100 °C
Pulsed drain current2) ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID=3.4 A, VDD=50 V 227 mJ
Avalanche energy, repetitive tAR
2),3) EAR ID=3.4 A, VDD=50 V
Avalanche current, repetitive tAR
2),3) IAR A
MOSFET dv/dt ruggedness dv/dtVDS=0...480 V V/ns
Gate source voltage VGS static V
AC (f>1 Hz)
Power dissipation Ptot TC=25 °C W
Operating and storage temperature Tj, Tstg °C
Mounting torque M3 and M3.5 screws 60 Ncm
±30
83
-55 ... 150
0.3
3
50
±20
Value
9.0
5.7
27
VDS @ Tj,max 650 V
RDS(on),max 0.385 Ω
Qg,typ 17 nC
Product Summary
Type Package Ordering Code Marking
IPI60R385CP PG-TO262 SP000103250 6R385P
PG-TO262
Rev. 2.0 page 1 2006-04-05
IPI60R385CP
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous diode forward current ISA
Diode pulse current2) IS,pulse 27
Reverse diode dv/dt4) dv/dt15 V/ns
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.5 K/W
RthJA leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads Tsold
1.6 mm (0.063 in.)
from case for 10 s - - 260 °C
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 600 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=0.34 mA 2.5 3 3.5
Zero gate voltage drain current IDSS
VDS=600 V, VGS=0 V,
Tj=25 °C --1µA
VDS=600 V, VGS=0 V,
Tj=150 °C -10-
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=5.2 A,
Tj=25 °C - 0.35 0.385 Ω
VGS=10 V, ID=5.2 A,
Tj=150 °C - 0.94 -
Gate resistance RGf=1 MHz, open drain - 1.8 - Ω
Value
TC=25 °C
5.2
Values
Thermal resistance, junction -
ambient
Rev. 2.0 page 2 2006-04-05
IPI60R385CP
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 790 - pF
Output capacitance Coss -38-
Effective output capacitance, energy
related5) Co(er) -36-
Effective output capacitance, time
related6) Co(tr) -96-
Turn-on delay time td(on) -10-ns
Rise time tr-5-
Turn-off delay time td(off) -40-
Fall time tf-5-
Gate Charge Characteristics
Gate to source charge Qgs -4-nC
Gate to drain charge Qgd -6-
Gate charge total Qg-1722
Gate plateau voltage Vplateau - 5.0 - V
Reverse Diode
Diode forward voltage VSD
VGS=0 V, IF=5.2 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr - 260 - ns
Reverse recovery charge Qrr - 3.1 - µC
Peak reverse recovery current Irrm -24-A
1) J-STD20 and JESD22
2) Pulse width tp limited by Tj,max
5) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
VR=400 V, IF=IS,
diF/dt=100 A/µs
6) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4) ISD<=ID, di/dt<=400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=400 V,
VGS=10 V, ID=5.2 A,
RG=3.3 Ω
VDD=400 V, ID=5.2 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
Rev. 2.0 page 3 2006-04-05
IPI60R385CP
1 Power dissipation 2 Safe operating area
Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ZthJC=f(tP)ID=f(VDS); Tj=25 °C
parameter: D=t p/Tparameter: VGS
0
20
40
60
80
100
0 40 80 120 160
TC [°C]
Ptot [W]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
102
101
100
10-1
VDS [V]
ID [A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V
20 V
0
5
10
15
20
25
0 5 10 15 20
VDS [V]
ID [A]
limited by on-state
resistance
Rev. 2.0 page 4 2006-04-05
IPI60R385CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=5.2 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
typ
98 %
0
0.2
0.4
0.6
0.8
1
1.2
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
C °25
C °150
0
4
8
12
16
20
24
28
32
36
40
0246810
VGS [V]
ID [A]
4.5 V
5 V
5.5 V
6 V
7 V
8 V
10 V
20 V
0
2
4
6
8
10
12
14
16
0 5 10 15 20
VDS [V]
ID [A]
5 V 5.5 V
6 V 6.5 V
7 V
20 V
0
0.4
0.8
1.2
1.6
0 5 10 15 20
ID [A]
RDS(on) [Ω]
Rev. 2.0 page 5 2006-04-05
IPI60R385CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Qgate); ID=5.2 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
11 Avalanche energy 12 Drain-source breakdown voltage
EAS=f(Tj); ID=3.4 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
25 °C
150 °C
25 °C, 98%
150 °C, 98%
102
101
100
10-1
0 0.5 1 1.5 2
VSD [V]
IF [A]
120 V
400 V
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20
Qgate [nC]
VGS [V]
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0
50
100
150
200
250
20 60 100 140 180
Tj [°C]
EAS [mJ]
Rev. 2.0 page 6 2006-04-05
IPI60R385CP
13 Typ. capacitances 14 Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Eoss=f(V DS)
0
2
4
6
0 100 200 300 400 500 600
VDS [V]
Eoss [µJ]
Ciss
Coss
Crss
105
104
103
102
101
100
0 100 200 300 400 500
VDS [V]
C [pF]
Rev. 2.0 page 7 2006-04-05
IPI60R385CP
Definition of diode switching characteristics
Rev. 2.0 page 8 2006-04-05
IPI60R385CP
PG-TO262-3-1 : Outlines
Dimensions in mm/inches:
Rev. 2.0 page 9 2006-04-05
IPI60R385CP
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
A
ll Rights Reserved.
A
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologie
s
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office
(
www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the type
s
in question please contact your nearest Infineon Technologies Office
.
Infineon Technologies Components may only be used in life-support devices or systems with the expres
s
written approval of Infineon Technologies, if a failure of such components can reasonably be expected t
o
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/o
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of th
e
user or other persons may be endangered
.
Rev. 2.0 page 10 2006-04-05