Hardware
Documentation
Hall-Effect Switches
HAL® 525, HAL 526
Edition Nov. 30, 2009
DSH000144_003EN
Data Sheet
HAL 525, HAL 526 DATA SHEET
2Nov. 30, 2009; DSH000144_003EN Micronas
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Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
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Micronas Trademarks
–HAL
Micronas Patents#
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Contents
Page Section Title
Micronas Nov. 30, 2009; DSH000144_003EN 3
DATA SHEET HAL 525, HAL 526
4 1. Introduction
4 1.1. Features
4 1.2. Switch Type
4 1.3. Marking Code
4 1.4. Operating Junction Temperature Range (TJ)
5 1.5. Hall Sensor Package Codes
5 1.6. Solderability and Welding
5 1.7. Pin Connections
6 2. Functional Description
7 3. Specifications
7 3.1. Outline Dimensions
12 3.2. Dimensions of Sensitive Area
12 3.3. Positions of Sensitive Areas
12 3.4. Absolute Maximum Ratings
12 3.4.1. Storage and Shelf Life
13 3.5. Recommended Operating Conditions
14 3.6. Characteristics
15 3.7. Magnetic Characteristics Overview
19 4. Type Description
19 4.1. HAL 525<
21 4.2. HAL 526
23 5. Application Notes
23 5.1. Ambient Temperature
23 5.2. Extended Operating Conditions
23 5.3. Start-Up Behavior
23 5.4. EMC and ESD
24 6. Data Sheet History
HAL 525, HAL 526 DATA SHEET
4Nov. 30, 2009; DSH000144_003EN Micronas
Hall-Effect Switches
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The Hall switches HAL 525< and HAL 526 are pro-
duced in CMOS technology. These sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain out-
put transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accord-
ingly, the output transistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
This sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C up to 125 °C.
The HAL 525< and HAL 526 are available in the
SMD package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
1.1. Features
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply volt-
age range
– the decrease of magnetic flux density caused by
rising temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for window lifter, ignition timing, and
revolution counting in extreme automotive and
industrial environments
– EMC corresponding to ISO 7637
1.2. Switch Type
Note: <: HAL 525 is not available for new designs.
Please use HAL 526 instead.
Latching Sensor:
Latching sensors require a magnetic north and south
pole for correct functioning. The output turns low with
the magnetic south pole on the branded side of the
package and turns high with the magnetic north pole
on the branded side. The output does not change if the
magnetic field is removed. For changing the output
state, the opposite magnetic field polarity must be
applied.
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 5.1.
on page 23.
Type Switching
Behavior Typical
Temperature
Coefficient
see
Page
525<latching −2000 ppm/K 19
526 latching −2000 ppm/K 21
Type Temperature Range
K E
HAL 525<525K −
HAL 526 526K 526E
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 5
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability and Welding
During soldering reflow processing and manual
reworking, a component body temperature of 260 C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.7. Pin Connections
Fig. 1–1: Pin configuration
HALXXXPA-T
Example: HAL526UA-E
→Type: 526
→Package: TO92UA
→Temperature Range: TJ = −40 °C to +100 °C
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
Type: 526
1VDD
2GND
3OUT
HAL 525, HAL 526 DATA SHEET
6Nov. 30, 2009; DSH000144_003EN Micronas
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a mag-
netic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induc-
tion of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain out-
put switches to the appropriate state. The built-in hys-
teresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the mag-
netic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
Fig. 2–1: HAL 525 and HAL 526 block diagram
Fig. 2–2: Timing diagram of HAL 526
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit
and
Overvoltage
Hall Plate
Switch
Comparator
Output
Clock
Protection
3
OUT
GND
2
1
VDD
t
VOL
VOUT
1/fosc = 9 μs
VOH
B
BON
fosc
t
t
tft
IDD
t
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 7
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
HAL 525, HAL 526 DATA SHEET
8Nov. 30, 2009; DSH000144_003EN Micronas
Fig. 3–2:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 9
Fig. 3–3:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
HAL 525, HAL 526 DATA SHEET
10 Nov. 30, 2009; DSH000144_003EN Micronas
Fig. 3–4:
TO92-2: Dimensions ammopack inline, not spread
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 11
Fig. 3–5:
TO92UA-1: Dimensions ammopack inline, spread
HAL 525, HAL 526 DATA SHEET
12 Nov. 30, 2009; DSH000144_003EN Micronas
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
SOT89B-1 TO92UA-1/-2
y 0.95 mm nominal 1.0 mm nominal
A4 0.3 mm nominal 0.3 mm nominal
D1 see drawing 3.05 mm ± 0.05 mm
H1 Not applicable min. 21 mm
max. 23.1 mm
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 −15 281) V
VOOutput Voltage 3 −0.3 281) V
IOContinuous Output On Current 3 −501) mA
TJJunction Temperature Range −40
−40
150
1702) °C
1) as long as TJmax is not exceeded
2) t < 1000h
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 13
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this speci-
fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 3.8 24 V
IOContinuous Output On Current 3 0 20 mA
VOOutput Voltage
(output switched off)
3024V
HAL 525, HAL 526 DATA SHEET
14 Nov. 30, 2009; DSH000144_003EN Micronas
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions
IDD Supply Current over
Temperature Range 11.635.2mA
VDDZ Overvoltage Protection
at Supply 1−28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 −28 32 V IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL Output Voltage 3 −130 280 mV IOL = 20 mA, TJ = 25 °C
VOL Output Voltage over
Temperature Range 3−130 400 mV IOL = 20 mA
IOH Output Leakage Current 3 −0.06 0.1 μA Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH Output Leakage Current over
Temperature Range 3−−10 μA Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24V
fosc Internal Oscillator Chopper
Frequency over Temperature
Range
−73
100 115
150 −
−kHz
kHz HAL 525
HAL 526
ten(O) Enable Time of Output after
Setting of VDD
1−30 70 μsV
DD = 12 V
B > BON + 2 mT or
B < BOFF − 2mT
trOutput Rise Time 3 −75 400 ns VDD = 12 V,
RL = 820 Ω,
CL = 20 pF
tfOutput Fall Time 3 −50 400 ns
SOT89B Package
Rthja
Rthjc
Rthjs
Thermal Resistance
Junction to Ambient
Junction to Case
Junction to Solder Point
−
−
−
−
−
−
−
−
−
2091)
561)
822)
K/W
K/W
K/W
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
TO92UA Package
Rthja
Rthjc
Rthjs
Thermal Resistance
Junction to Ambient
Junction to Case
Junction to Solder Point
−
−
−
−
−
−
−
−
−
2461)
701)
1272)
K/W
K/W
K/W
1)Measured with a 1s0p board
2)Measured with a 1s1p board
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 15
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Note: For detailed descriptions of the individual types, see pages 19 and following.
1.05
1.05
1.80
0.50
1.50
1.45
2.90
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 525 −40 °C 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 mT
latching 25 °C11 14 17 −17 −14 −11 24 28 32 mT
140 °C 6.5 10 14 −14 −10 −6.5162026mT
HAL 526 −40 °C 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 mT
latching 25 °C11 14 17 −17 −14 −11 24 28 32 mT
140 °C 6.5 10 14 −14 −10 −6.5162026mT
HAL 525, HAL 526 DATA SHEET
16 Nov. 30, 2009; DSH000144_003EN Micronas
–15
–10
–5
0
5
10
15
20
25
–15–10 –5 0 5 10 15 20 25 30 35 V
mA
V
DD
I
DD
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
HAL 52x
Fig. 3–7: Typical supply current
versus supply voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12345678
V
mA
V
DD
I
DD
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 52x
Fig. 3–8: Typical supply current
versus supply voltage
0
1
2
3
4
5
–50 0 50 100 150 200 °C
mA
T
A
I
DD
V
DD
= 3.8 V
V
DD
= 12 V
V
DD
= 24 V
HAL 52x
Fig. 3–9: Typical supply current
versus ambient temperature
0
20
40
60
80
100
120
140
160
180
200
–50 0 50 100 150 200 °C
kHz
T
A
f
osc
V
DD
= 3.8 V
V
DD
= 4.5 V...24 V
HAL 52x
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 17
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30 V
mV
V
DD
V
OL
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
I
O
= 20 mA
T
A
= 100 °C
HAL 52x
Fig. 3–11: Typical output low voltage
versus supply voltage
0
100
200
300
400
500
600
34567
V
mV
V
DD
V
OL
T
A
= –40 °C
T
A
=25 °C
T
A
=170 °C
I
O
= 20 mA
T
A
=100 °C
HAL 52x
Fig. 3–12: Typical output low voltage
versus supply voltage
0
100
200
300
400
–50 0 50 100 150 200 °C
mV
T
A
V
OL
V
DD
= 3.8 V
V
DD
= 4.5 V
V
DD
= 24 V
I
O
= 20 mA
HAL 52x
Fig. 3–13: Typical output low voltage
versus ambient temperature
15 20 25 30 35 V
μA
V
OH
I
OH
T
A
= –40 °C
T
A
=170 °C
T
A
=150 °C
T
A
=100 °C
T
A
=25 °C
10
–6
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
10
3
10
4
HAL 52x
Fig. 3–14: Typ. output high current
versus output voltage
HAL 525, HAL 526 DATA SHEET
18 Nov. 30, 2009; DSH000144_003EN Micronas
–50 0 50 100 150 200 °C
μA
T
A
I
OH
V
OH
= 24 V
V
OH
= 3.8 V
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
10
1
10
2
HAL 52x
Fig. 3–15: Typical output leakage current
versus ambient temperature
–30
–20
–10
0
10
20
30
0.01 0.10 1.00 10.00 100.00 1000.00
dBμA
f
I
DD
V
DD
= 12 V
T
A
= 25 °C
Quasi-Peak-
Measurement
max.spurious
signals
1 10 100 1000 MHz
HAL 52x
Fig. 3–16: Typ. spectrum of supply current
dBμV
0
10
20
30
40
50
60
70
80
0.01 0.10 1.00 10.00 100.00 1000.00
1 10 100 1000 MHz
f
V
DD
V
P
= 12 V
T
A
= 25 °C
Quasi-Peak-
Measurement
test circuit
max.spurious
signals
HAL 52x
Fig. 3–17: Typ. spectrum of supply voltage
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 19
4. Type Description
4.1. HAL 525<
The HAL 525< is a latching sensor (see Fig. 4–1).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching
– low sensitivity
–typical B
ON: 14 mT at room temperature
–typical B
OFF: −14 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −2000 ppm/K
Applications
The HAL 525< is an optimal sensor for applications
with alternating magnetic signals such as:
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifter.
Fig. 4–1: Definition of magnetic switching points for
the HAL 525<
Note: <:HAL 525 is not available for new designs.
Please use HAL 526 instead.
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 0 mT
25 °C11 14 17 −17 −14 −11 24 28 32 −20 2 mT
100 °C8 11 15.5 −15.5 −11 −8 18.5 22 28.7 0 mT
140 °C6.5 10 14 −14 −10 −6.5 16 20 26 0 mT
HAL 525, HAL 526 DATA SHEET
20 Nov. 30, 2009; DSH000144_003EN Micronas
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
–20
–15
–10
–5
0
5
10
15
20
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 525
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
V
DD
B
ON
B
OFF
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 525
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
–50 0 50 100 150 200 °C
mT
T
A
, T
J
B
ON
B
OFF
B
ON
max
B
ON
min
B
OFF
max
B
OFF
min
V
DD
= 4.5 V...24 V
V
DD
= 3.8 V
B
ON
typ
B
OFF
typ
HAL 525
Fig. 4–4: Magnetic switching points
versus temperature
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 21
4.2. HAL 526
The HAL 526 is a latching sensor (see Fig. 4–5).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching
– low sensitivity
–typical B
ON: 14 mT at room temperature
–typical B
OFF: −14 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −2000 ppm/K
Applications
The HAL 526 is an optimal sensor for applications with
alternating magnetic signals such as:
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifter.
Fig. 4–5: Definition of magnetic switching points for
the HAL 526
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 11.8 15.8 19.2 −19.2 −15.8 −11.8 27.4 31.6 35.8 0 mT
25 °C11 14 17 −17 −14 −11 24 28 32 −20 2 mT
100 °C8 11 15.5 −15.5 −11 −8 18.5 22 28.7 0 mT
140 °C6.5 10 14 −14 −10 −6.5 16 20 26 0 mT
HAL 525, HAL 526 DATA SHEET
22 Nov. 30, 2009; DSH000144_003EN Micronas
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
–20
–15
–10
–5
0
5
10
15
20
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 525
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
3 3.5 4.0 4.5 5.0 5.5 6.0 V
mT
V
DD
B
ON
B
OFF
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 170 °C
T
A
= 100 °C
HAL 525
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
–20
–15
–10
–5
0
5
10
15
20
–50 0 50 100 150 200 °C
mT
T
A
, T
J
B
ON
B
OFF
B
ON
max
B
ON
min
B
OFF
max
B
OFF
min
V
DD
= 4.5 V...24 V
V
DD
= 3.8 V
B
ON
typ
B
OFF
typ
HAL 525
Fig. 4–8: Magnetic switching points
versus temperature
DATA SHEET HAL 525, HAL 526
Micronas Nov. 30, 2009; DSH000144_003EN 23
5. Application Notes
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
At static conditions and continuous operation, the fol-
lowing equation applies:
If IOUT > IDD, please contact Micronas application sup-
port for detailed instructions on calculating ambient-
temperature.
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 13).
Supply Voltage Below 3.8 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is
not tested. For special test conditions, please
contact Micronas.
5.3. Start-Up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Characteristics (see page 14).
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the out-
put will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic field must be above
BONmax, respectively, below BOFFmin.
5.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Fig. 5–1: Test circuit for EMC investigations
TJTAΔT+=
ΔTI
DD VDD
×R×th
=
TAmax TJmax ΔT–=
RV
220 Ω
VEMC
VP
4.7 nF
VDD
OUT
GND
1
2
3
RL1.2 kΩ
20 pF
HAL 525, HAL 526 DATA SHEET
24 Nov. 30, 2009; DSH000144_003EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com
6. Data Sheet History
1. Final data sheet: “HAL 525 Hall Effect Sensor IC”,
April 23, 1997, 6251-465-1DS. First release of the
final data sheet.
2. Final data sheet: “HAL 525 Hall Effect Sensor IC”,
March 10, 1999, 6251-465-2DS. Second release of
the final data sheet. Major changes:
– additional package SOT-89B
– outline dimensions for SOT-89A and TO-92UA
changed
– electrical characteristics changed
– section 4.2.: Extended Operating Conditions added
– section 4.3.: Start-up Behavior added
3. Final data sheet: “HAL 525, HAL 535 Hall Effect
Sensor Family”, Aug. 30, 2000, 6251-465-3DS.
Third release of the final data sheet. Major changes:
– new sensor HAL 535 added
– outline dimensions for SOT-89B: reduced toler-
ances
– SMD package SOT-89A removed
– temperature range “C” removed
4. Data Sheet: “HAL 525, HAL 535 Hall Effect Sensor
Family”, Aug. 8, 2002, 6251-465-4DS. Fourth
release of the data sheet. Major changes:
– outline dimensions for TO-92UA changed
– temperature range “A” removed
5. Data Sheet: “HAL 525, HAL 526, HAL 535 Hall
Effect Sensor Family”, Oct. 22, 2002, 6251-465-
5DS. Fifth release of the data sheet. Major changes:
– new sensor HAL 526 added
6. Data Sheet: “HAL 526, HAL 535 Hall Effect Sensor
Family”, March 31, 2004, 6251-465-6DS. Sixth
release of the data sheet. Major changes:
– specification for HAL525 removed
– new package diagrams for SOT89B-1 and
TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
7. Data Sheet: “HAL 526 Hall-Effect Switch”,
Nov. 8, 2007, DSH000144_001EN. Seventh release
of the data sheet. Major changes:
– specification for HAL 535 removed
– package diagrams for SOT89B-1, TO92UA-1, and
TO92UA-2 updated
– ammopack diagrams for TO92UA-1/-2 updated
8. Data Sheet: “HAL 526 Hall-Effect Switches”,
Feb. 6, 2009, DSH000144_002EN. Eighth release
of the data sheet. Major changes:
– Section 1.6. “Solderability and Welding” updated
9. Data Sheet: “HAL 525, HAL 526 Hall-Effect
Switches”,
Nov. 30, 2009, DSH000144_003EN. Ninth release
of the data sheet. Major changes:
– HAL 525 added
