UG2001UG2005 VISHAY 2.0A UltraFast Glass Passivated Rectifiers Features Glass passivated die construction Diffused junction drop Surge overload rating to 30A peak Low reverse leakage current Super-fast switching for high efficiency High current capability and low forward voltage Vishay Lite-On Power Semiconductor Plastic material - UL Recognition flammability classification 94V0 Absolute Maximum Ratings Tj = 25C 14 421 Repetitive peak reverse voltage UG2001 Vrru 50 Vv =Working peak reverse voltage UG2002 =VRwM 100 Vv =DC Blocking voltage UG2003 =VpR 200 V UG2004 400 Vv UG2005 600 Vv Peak forward surge current lesm 60 A Average forward current Ta=55C IEAy 2 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IF=2A UG2001-2003 Ve 1.0 Vv UG2004 Ve 1.3 Vv UG2005 Ve 1.7 Vv Reverse current Tp=25C IR 8.0 | WA Ta=100C IR 100 | pA Reverse recovery time ||l-F=1A, IR=0.5A, ter 50 ns |,=0.25A Diode capacitance VpR=4V, f=1MHz UG2001-2004 Cp 20 pF UG2005 Cp 10 pF Thermal resistance RthJA 50 KW junction to ambient Rev. A2, 24-Jun-98UG2001UG2005 war Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) ~ 2.0 Single phase x 60 <x 60 Hz resistive or inductive load ~ = ra 5 16 c 5 o Oo o 40 12 5 N = g N 3S 2 NV Ww oO We o 08 = NN w uw = =20 N oO a INQ < N ~ 04 o IN z ry = z 0 - 0 25 50 75 100 125 150 175 200 1 10 100 15422 Tamb Ambient Temperature (C ) 15424 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 20 [UG2001-UG2003 UG2004 100 10 = a < ~~ ~ UG2005 3 5 c Pa wo 5S 10 = UG2001-UG2004 o o z a 10 o Oo e 3 UG2005 uw 2 I 0.1 ao LL I _ a T= 25C 0.01 Pulse Width = 300 ps 1 06 08 10 12 14 16 18 20 1 10 100 15423 Ve Forward Voltage ( V ) 15425 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98VISHAY Dimensions in mm A U0-15 Dim Min Max A 25.40 - B 5.90 1.62 C 0.686 0.689 U 2.60 3.6 All Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 0.4 grams Mounting position: any Marking: type number UG2001UG2005 Vishay Lite-On Power Semiconductor technical drawings according to DIN specifications 14442 Rev. A2, 24-Jun-98UG2001UG2005 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98