ECS TC @O00001e5 0004038 ? mat Se i i MIL-S- 19500 424 AMENDMENT 2 -arcs 17. SUPERSEDING J AMENDMENT 1 16 January 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES TX AND NON-TX 1N5186, 1N5187, 1N5188, AND 1N5190 This amendment forms a part of Military Specification MIL-S-19500/424, 23 June 1969, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page 2 * Figure 1, delete and substitute: Po gD gB DIMENSIONS INCHES MILLIMETERS |. MIN MAX | MIN MAX #B 9038] .042 -97 {1.07 gD 2-115} .155] 2.92 | 3.94 |3,2 G -150/ .300 | 3.81 |7.62 1.000 }1.500 25.40 {38.10 LTR yamaAaoZ Notes: 1. Metric equivalents (to the nearest .01) are given for general information only and are based upon 1 inch = 25.4mm. 2. Dimensions G and @D include all components of the diode periphery except the * sections of leads over which the diameter is controlled. 3. Dimensions @D shall be measured at the largest diameter. FIGURE 1. Semiconductor device, diode, silicon, fast recover ower rectifier TX and non-TX types 1N5186, 1N5187, 1N5188, and 1N5190. 1. Changes from previous issue. The outside margins of this document have been marked "*"' to indicate where changes (deletions, additions, etc.) from previous issue have been made. This has been done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content as written irrespective of the marginal notations and relationship to the last previous issue. FSC 5961MIL-S-19500 424 MIL SPECS TC oooo1es ooowo39 9 Page 3 *3.5. add the following new subparagraph: (c) Inspection lot identification code. 4.2: In line 2 add and 4" between ''3" and "of group B inspection" and in line 4, delete ''4", *4,2.1: Delete entirely, Page 4 4.3.2, line 3: Delete reference to subgroups ''4, 5, and 6" in two places and substitute "5, 6, and 7", Adc the following new paragraph: "4.3.4 Group B thermal shock (temperature cycling), The number of temperature cycles may be increased from 10 to 25 in order to simultaneously satisfy group B and C requiremenis. If this is done, the total test time shall not exceed 72 hours. "' Page 5 Table II, group B inspection, subgroup 2: Add "see 4.3.4)" as the third line under ''Thermal shock (temperature cycling), "" Also add "time at temperature extremes = 15 minutes min" in the details column for the thermal shock (temperature cycling) test. Page 7 * Table I, group C inspection: Delete end point tests from subgroup 2; following subgroup 3 add subgroup 4: MIL-STD-750 LTPD Limits Examination or test Method Details pay ax| Symbol | Min | Mox | Unit Subgroup 4 10 10 Thermal shock 1051 | Test condition C-1; time at --- w-- | --- --- (temperature cycling) temperature extremes = 15 minutes min, Total test time = 72 hours max T (max) = 275C End points: (same as subgroup 2 of group B) * 4.4.2, line 4, delete last two sentences and substitute: "The diodes in this test shall not be forced air or liquid cooled, but shall be shielded from convection air currents." Page 12 * Delete figure 4.MIL SPECS Tc foooo1es aooyowo 5 & MIL-S-19500/424 Page 13 * Under review activities: Delete ''85" and substitute ''70, 80." Custodians: Preparing activity: Army - EL Air Force - 17 Navy - EC Air Force - 17 Agent: DSA - ES Review activities: Army - MU, MI (Project 5961-0251) Air Force - 11, 70, 80 DSA - ES User activities: Army - SM Navy - MC, CG, AS, OS Air Force - 19 ..Te Woooo1es oooyo4un 7 Pf min-s-i9s00/424 MIL SPECS ch MitL-S-1980 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES TX AND NON-TX 1N5186, 1N5187, 1N5188, AND 1N5190 This specification is mandatory for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements far silicon, fast recovery, semi- conductor diodes. The prefix ''TX" is used on devices submitted to and passing the special process - conditioning and screening tests specified in 4.5 through 4.5.11. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. (wie) Ip 1/ Io _if(suree) Type VR Vero (wkg Ta = 25 Cc T, = 150C p = 8.3 ms trr A A Ta = 150C Vdc v(pk) Adc mAdc a nsec 1N5 186 100 100 3.0 700 80 150 1N5 187 200 200 3.0 700 80 200 1N5182 400 400 3.0 700 80 250 1N5190 600 600 3.0 700 80 400 1/ Derate linearly 0.018 A/C from Ta = 25C to Ta = 150C. 0.028 A/C from-Ta = 150C to Ta = 175C. Temperature range (operating): -65 to 175C. Temperature range (storage): -65 to 200C, . Barometric pressure, reduced (high altitude operation): 8 mm Hg (100, 000 ft). 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein. SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification For. STANDARD MILITARY MIL-STD-%750 - Test Methods for Semiconductor Devices. (Copies of specifications, standards, drawings, and publications required by suppliers in con- nection with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer.) FSC 5961MIL-S-19500/424 MIL SPECS I Joooo1es oooyouez 9 DIMENSIONS y LTR INCHES MILLIMETERS E MIN | MAX | MIN [ MAX |S Aj .15 | 300 3.81 | 7.62 Bj} 2225] .155 3.18 | 3.94 C | 1.000 | 1.500 | 25.40 | 38.10 {4, D | .038 | .042 27 | 1.07 NOTES: 1. Dimensions are in inches. 2. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm. 3. See paragraph 3.5 for marking requirements. 4. Both leads shall be within the specified limits. 5. The specified lead diameter applies in the zone between .050 from the diode body to the end of the lead. FIGURE 1. Semiconductor device, diode, silicon, fast recovery, power rectifier, TX and non-TX types 1N5186, 1N5187, 1N5188 and 1N5190.MIL-S-19500/424 MIL SPECS Ic Boooo1es Oo004043 0 T 3. REQUIREMENTS 3.1 General. Requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations and symbols. The abbreviations and symbols used herein are defined in MIL-S-19500, and as follows: Cj = junction capacitance 3.3 Design, construction, and physical dimensions. Diodes shall be of the design, construction, and physical dimensions as shown on figure 1. 3.4 Performance characteristics. Performance characteristics shall be as specified in tables I, I, and HI. 3.4.1 Process-conditioning, testing, and screening for ''TX"' types. Process-conditioning. testing, and screening for the "TX" types shall be as specified in 4.5. 3.5 Marking. The following marking specified in MIL-S-19500 may be omitted at the option of the manufacturer: (a) Manufacturer's identification. (b) Country of origin. 3.5.1 Type designation, It is permissible to have the type designation on more than one line; however, if this is done, the break in the type number Shall be as follows: JIN JTXIN XXXX OT XXXXK 3.5.2 "TX" type. Devices in accordance with the requirements for the ''TX" type shall be marked with a "J TX" preceding the applicable type designation. "'TX"' shall be considered as part of the type designation. 3.5.3 Polarity marking. The polarity marking shall be indicated with a contrasting color band to denote the cathode end. No color coding shall be permitted. 4, QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall consist of the examination and tests specified in tables I, I, and IM. Subgroups 1, 2, and 3 of group B inspection, and subgroup 2 of group C inspection. may be performed on an inspection sublot of any type to qualify all types. Sub- groups 4, 5,6,&7 of group B inspection, and subgroup 3 of group C inspection, shall be performed on an inspection sublot for each voltage type of the highest and lowest voltage types being qualified. Subgroup 1 of group C inspection shall be performed on an inspection sublot of the highest voltage unit being qualified. 4.2.1 Qualification testing. The "non-TX" types shall be used for qualification testing. At the manufacturer's request to the qualifying activity, qualification will be extended to include the ''TX" type of the device. 4.3 Quality conformance inspection. Quality conformance inspection shall consist of examina- tions and tests specified in groups A, B, and C for ''non-TX"' types. For ''TX" types, the proces-~ sing tests and examinations specified in 4.5 shall be performed in addition to the examinations and tests specified in groups A, B, and C. 4.3.1 Group A inspection. Group A inspection shall consist of the examinations and tests specified in table I. Group A inspection shall be done on a sublot basis.MIL SPECS Tc oooo1es ooovowy 2 MIL-S-19500/424 4.3.2 Group B inspection. Group B inspection shall consist of the examinations and tests specified in table Il. Group B inspection may be done on a lot basis with the exception of sub- groups 4, 5, and6. For subgroups 4, 5, and 6, sublots of the highest and lowest voltage types present in the lot shall be used to accept those types and all intermediate voltage types. 4.3.3 Group C inspection. Group C inspection shall consist of the examinations and tests specified in table II and shall be performed on every 10th lot or every 6 months whichever comes first. Group C inspection may be performed on a lot basis with the exception of subgroup 1 which shall be performed on the highest voltage type present in the lot and shall be used to accept that type and all lower voltage types. If a lot contains a higher voltage type than has previously been accepted to subgroup 1 in the current 6-month period, this higher voltage type shall be subjected to subgroup 1 inspection. TABLE I. Group A inspection MIL-STD-750 LTPD Limits Examination or test N Method Details X TX Symbol Min Max Unit Subgroup 1 5 1 5 Visual and mechanical 2071 --- cer -- cor examination Subgroup 2 5 | 2 Forward voltage 4011 jig = 9 a(pk) (pulsed); vf 0.9 1.5 | v(pk) (See 4.4.3) duty cycle 2%; 8.3 ms pulse width Reverse current 4016 |DC method 1N5186 VR = 100 Vde Ir --- 2.0 |pAdec 1N5187 VR = 200 Vdc IR --- 2.0 |pAdec 1N5188 VR = 400 Vdc IR --- 2.0 jpAde 1N5190 VR = 600 Vde IR --- 2.0 | uAde Breakdown voltage 4021 [Ig = 100 pAdc 1N5186 BV 120 --- |Vde 1N5187 BV 240 --- | Vdc 1N5188 BV 480 ~-- |Vde 1N5190 BV 660 --- |Vde Reverse recovery time 4031 |See 4.4.1 1N5186 trr --- 150 jnsec 1N5187 trr --- 200 jnsec 1N5188 trr --- 250 |nsec 1N5190 trr oer 400 |nsec Capacitance 4001 |VR=0; f= 1 MHz 1N5186 Cj --- 300 ipf 1N5187 Cj --- 300 |pf 1N5188 Cj --- 230 |pf 1N5190 Cj --- | 180 |pfMIL SPECS Ic gooodies OOO4O4s 4 TABLE I. Group A inspection - Continued MIL -S-19500 424 MIL-STD-750 _LTPD | (Limits Exomination or test _ tk r }-+- Method Detoils TX TX Symbol | Min i Mex Unit Subgroup 2 -Continued Capacitance 4001 ,VRp=4V; f= 1 MHz 1N5186 Cj --- 260 {pf 1N5187 Cj --- | 170 |pf 1N5188 Cj oc 120 {pf 1N5190 : Cj --- 90 {pf Subgroup 3 5 2 1 High-temperature operation TA = 100C Reverse current 4016 (DC method 1N5186 IVR = 100 Vdc IR --- | 100 |pAdc 1N5187 VR = 200 Vdc IR --- 100 | wAdc 1N5188 VR = 400 Vdc IR --- 100 | uAdc 1N5190 VR = 600 Vdc IR --- 100 |pAdc | TABLE Ii. Group B inspection MIL-STD-750 LTPD Limits Examination or test T N Method Details x TX Symbol Min Max Unit Subgroup 1 : 10 $10 Physical dimensions 2066 i See figure 1 : otal ooo ere fees Subgroup 2 10 i 10 Solderability 2026 . wwe | wee | --- [--- | Thermal shock 105% | Test cond. Cc; : --- weet wen [eee (temperature cycling) T(max) = 175C; 10 cycles Thermal shock 1056 Test cond. A ooo --- coe fee (glass strain) | Terminal strength: 2036 Tension Test cond. A; t = 30 sec; --- --- ene [ene weight = 4 lbs Hermetic seal 1071 | See 4.5.6 --- --- ore jee Moisture resistance 1021 | Omit initial conditioning --- --- ere pone End points: Forward voltage 4011 | ig = 9.0 a(pk) (pulsed) vg 0.9 1.5 | v(pk) (See 4.4.3) Reverse current 4016 | DC method 1N5186 VR = 100 Vde IR --- 2 pAdc 1N5187 VR = 200 Vdc IR =-- 2 pAdc 1N5188 VR = 400 Vdc Irn --- 2 Adc 1N5190 VR = 600 Vdc IR -c- 2 pAdcMIL SPECS IC gocoo1es OOO4O4L & a MIL-S-19500 424 _ : TABLE H. Group Bainspection -Continucd mIL-STD-756 | LTPD Limits Exorination or test Fe ee ee . Method Details TRITX Symbol Min Max Unit Subgroup 3 10 | 10 i Shock 2016 |Nonoperating; 1,500 G; | --- --- wee [--- It = 0.5 ms; 5 blows in leach orientation: X1, Yq. ;and Y9 | Vibration, variable 2056 | 25 G; orientations Xj, Yq. | --- wee | one pee frequency land 21 | : Constant acceleration 2006 |Nonoperating: 20, 000 G: --- a wee Jone j Orientations Xy, Yq, and Z1 \ End points: (Same as subgroup 2) 1 Subgroup 4 10110 Terminal strength 2036 | Test cond. E _ --- | woe Jol (lead fatigue) ~ t Subgroup 5 10} 5 | t Surge current 4066 {Ta = 150C; ig (surge) = '80 a, 10 surges of 1/120sec duration, 1 surge/min; Ig = 700 mAdc 1 t 1N5186 ;Vp = 100 v(pk) --- --- w+- ]--- 1N5 187 :Vr = 200 v(pk) --- --- a 1N5188 Vy = 400 v(pk) --- --- | --- |--- 1N5190 ivy = 600 v(pk) we | wee | ue fee "(See 4.4.2 for mounting | conditions) End points: ' (Same as subgroup 2) : Subgroup 6 A=5A=3 High-temperature life 1031 ITA = 200C --- ne eo (nonoperating) End points: (Same as subgroup 2 plus | reverse recovery time) | Subgroup 7 A=5]A=3 Steady-state operation life 1026 Ta = 25C; f = 60 Hz; (See 4.4.2) ily = 3 Ade i 1N5186 v. = 100 v(pk) ee 1N5187 lvz = 200 v(pk) wee [wee | eee [oe 1N5188 lv = 400 v(pk) --- w-- | --- | --- 1N5190 ivy = 600 v(pk) --- --- woe | --- i End points: | (Same as subgroup 2 plus | reverse recovery time) MIL--19500/424 TABLE III, Group C inspection MIL SPECS I JJooco1es OOOvOu? & i MIL-STD-750 LTP Lim.ts Erxunieation of test . 4. | | Method Details TX TX Symbol Min) Man Unit Subgroup 1 i 10 |10 I Barometric pressure 1001 | Pressure = 8 mm Hg; --- --- --- [--- (altitude operation) it = 60 sec Measurement during test: | Reverse current 4016 ! DC method : 1N5186 iVR = 100 Vdc IR --- | 2 | uAde 1N5187 !VR = 200 Vde IR --- 2 | pAde 1N5188 VR = 400 Vdc IR --- 2 | pAde 1N5190 VR = 600 Vdc IR --- 2 pAdc Subgroup 2 ; 10 | 10 Salt atmosphere 1041 --~ --- err [ane (corrosion) I End points: , | Forward voltage 4011 |ig= 9 a(pk) (pulsed) vf 0.9 1.5 | v(pk) Reverse current 4016 loc method 1N5186 1 VR = 100 Vde IR --- 2 pAdc 1N5187 | VR = 200 Vde IR --- 2 | pAdc 1N5188 VR = 400 Vdc IR eco 2 LAdc 1N5190 | YR = 600 Vdc IR -- 2 pAdc Subgroup 3 5 | 2 Low-temperature operation | Ta = -65C Forward voltage 4011 /ig = 9 a(pk) (pulsed) VE 0.9 1.5 | v(pk) Reverse current 4016 }DC method { 1N5186 1'VR = 100 Vde IR o-- 2 pAdc 1N5187 VR = 200 Vde IR --- 2 pAdc 1N5188 VR = 400 Vde IR oor 2 pAdc 1N5190 IVR = 600 Vdc IR --- 2 pAdc 4.4 Methods of examination and test. Methods of examination and test shall be as specified in tables I, Il, and OI, and as follows: 4.4.1 Reverse recovery time. Reverse recovery time shall be measured by the circuit shown on figure 2. The pulse generator shall have a pulse repetition frequency of 1 kHz (max) and a pulse width of 10 ps (min). Recovery conditions: 0.5 ampere forward current to 1.0 ampere reverse current. Recovery time is measured when rectifier recovers to 0.25 ampere. Point of contact on leads shall be no less than 3/8" (9.53 mm) from the diode body. 4.4.2 Steady-state operation life. This test shall be conducted with a half-sine waveform of the speci- fied peak voltage impressed across the diode in the reverse direction, followed by a half-sine waveform of the specified average rectifier current. The forward conduction angle of the rectified current shall not be greater than 180 nor less than 150. The temperature differentials from lead to mount and from mount to ambient shall not exceed 5C. Mounting method shall utilize a clip type connection and no heat sink nor forced-air flow across the body of the device shall be employed.at ht A OS a MIL SPECS Joooo12s oooyoua 7 i ys fe +0.5A OA -0.25A -10A cm ET TIME BASE FOR 50 TO 100 nsec/cm 50SIL 10 fv N.I. N.I. () (+) =) 2 5 vac GENLRATOR APPROX FZ ( ) ay -) 1 N.1. (+) NOTES: 1. Rise time = 7 nsec maximum, input impedance = 1 megohm, 22 pf. 2. Rise time = 10 nsec maximum, source impedance = 50 ohm. FIGURE 2. Reverse recovery time characteristic and test circuit diagram.MIL -S-19500/424 MIL SPECS Ic poocoies Ooo4044 h f 4.4.3 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5 Process-conditioning, testing, and screening ''TX"' types. The procedure for process- conditioning, testing, and screening the "TX" types shali be in accordance with 4.5.1 through 4.5.11 and figure 4. Process-conditioning shall be conducted on 100 percent of the lot, prior to submission of the lot to the tests specified in tables I, H, and I. (At the option of the manufacturer, the non- TX types may be subjected to process-conditioning and testing. ) 4.5.1 Quality assurance (lot verification). Quality assurance shall keep lot records for a 3 year minimum, monitor for compliance to the prescribed procedures, and observe that satisfactory man- ufacturing conditions and records on lots are maintained for these devices. The records shall be available for review by the customer at all times. The quality assurance monitoring shall include, put not be limited to: process-conditioning, testing, and screening. (The conditioning and screening tests performed as standard-production tests need not be repeated when these are predesignated and acceptable to the Government as being equal to or more severe than specified herein, and the rela- tive process-conditioning sequence is maintained. ) 4.5.2 High-temperature storage. All devices shall be stored for at least 48 hours at a minimum temperature (Ta) of 200C. . 4.5.3 Scope display. The_breakdown characteristics of the device shall be graphically viewed on an oscilloscope with a peak reverse current, ir, of 100 uA minimum. The scope voltage sensi- tivity shall be 100 v/cm and current sensitivity shall be 20 uA/cm. All devices when viewed on the oscilloscope shall present sharp knee characteristics. Any discontinuity or dynamic instability of the trace shall be cause for rejection. 4.5.4 Thermal shock (temperature cycling). All devices shall be subjected to thermal shock (temperature cycling) and shall be performed in accordance with MIL-STD-750, method 1051, test condition C, except that 10 cycles shall be continuously performed and the time at the temperature extremes shall be 15 minutes, minimum. 4.5.5 Constant acceleration. All devices shall be subjected to the acceleration test in accor- dance with MIL-STD-750, method 2006, with the following exceptions: The test shall be performed one time in the Yj orientation only, at a peak level of 10,000 G minimum. The 1-minute hold-time requirement shall not apply. 4.5.6 Hermetic-seal tests. All devices shall be subjected to hermetic-seal tests (fine leak followed by gross leak) with test conditions as specified in 4.5.6.1, 4.5.6.2, or 4.5.6.3. 4.5.6.1 Fine-leak test. All devices shall be fine-leak tested in accordance with MIL-STD-750, method 1071, test condition G or H. 4.5.6.2 Gross-leak test (bubble). All devices shall be tested for gross leaks in accordance with MIL-STD-750, method 1071, test condition D, except that the solution may be any suitable noncor- rosive liquid at a minimum temperature of 100C. 4.5.6.3 Gross-leak test (penetrant dye). All devices shall be tested for gross leaks in accor- dance with MIL-STD-750, method 1071, test condition E. After the alcohol rinse and drying cycle, nontransparent devices shall be examined by placing them ona clean white blotter and observing for evidence of any dye. 4.5.7 Preburn-in tests. The parameters Ip and vf of table IV shall be measured and the data recorded for all devices in the lot. All devices shall be handled or identified such that the delta end points can be determined after the burn-in test. All devices which fail to meet these require- ments shall be removed from the lot. Quantity removed shall be noted on the lot history.MIL SPECS I foooo12s oooyoso 8 TABLE IV. Burn-in test measurements - og. : MIL-STD-750 Limits . Examination or test Method Details Symbol Min Max Unit Reverse current 4016 DC method 1N5 186 VR = 100 Vdc IR woe 2 pAdc 1N5187 VR = 200 Vdc IR --- 2 pAdc 1N5188 VR = 400 Vdc IR --- 2 pAdc 1N5190 VR = 600 Vdc IR --- 2 pAdc Forward voltage 4011 i = 9.0 a(pk) (pulsed) VE 0.9 1.5 v(pk) 4.5.8 Burn-in test. All devices shall be operated for 168 hours minimum under the following conditions (see 4. 4. 2): Ta = 25C; Ip = 3 Adc; {= 60 Hz; VRM (wkg) (see 1.3). 4.5.9 Burn-in test, reverse bias (see figure 3). All devices shall be operated for 96 hours minimum under the following conditions: 150C. TA (see 1.3). VR IR (max) (see group A, subgroup 3). 4.5.10 Post burn-in tests. The parameters Ip and v of table IV shall be remeasured after burn-in and the data recorded for all devices in the lot. The parameters measured shall not have changed during the burn-in tests from the initial values by more than the specified amount as follows: Alp = 250 nAdc (max). Avf = +0.1 v(pk) from the initial value. 4.5.11 Burn-in test failures (screening). All devices that exceed the delta (A) limits of 4.5.10 or the limits of table IV after burn-in, shall be removed from the inspection lot and the quantity removed shall be noted on the lot history. Where the quantity removed after burn-in exceeds 10 percent of the total inspection lot on burn-in test, the entire lot shall be unacceptable as "TX" types. __-.- 10MIL-S-19500/424 MIL SPECS I oooo12s oooyos, t SL Jf Ry Re Rn +i VOLTAGE _ SOURCE vde DUT, DUTp Bours A L 4] FIGURE 3. Burn-in test, reverse bias (see 4.5.9). Procedure. Lead mounted devices should be mounted with jig mounting clips at least 3/8 inch (9.53 mm) from the body. The point of connection shall be maintained at a temperature not less than 150C. At the end of the burn-in period, the diodes shall be allowed to reach room ambient temperature, from the specified burn-in test temperature, with the specified reverse voltage VR still applied. The devices shall then be removed from the burn-in apparatus, allowed to reach standard test conditions, and delta end-point parameter test performed within 8 hours after re- moval of devices from the specified burn-in test conditions. Notes. 1. The de voltage source shall contain a ripple voltage no higher than 4 percent. 2. Current limiting resistors shall not contribute to more than a 5 percent loss in regu- lation from the applied rated VR if the reverse current equals three times the specified value. 3. Values of Rj, Rg.... Rn can be calculated as follows: 0.05 VR R(1, 2....n) = ____- 3 IR (max) _il_ a ru wy a x oO o o wn mu q o oO oO oO U Hi U Lu o. a Hi = as nN vr ~ S 3 w> a _ a ' bam = sodA XLNVE pue (X.L-UON) NVE OF weiserp dinped oid jo Japig py AHN GL AHL JO WACHOs ? " xd T XLNVL Araatpap NMOHS SV GHWHOANAd Ad TTVHS SHOOTA AHL NI SLS IOJ uoTjeredaig poofar 10 49} UI-uanqg wos syefar UO ydaooe 4OT 10J paseq ep1azI10 uopaf{ar OT PF $89} [eas-oTJouTAAaH * yep OC pue gq y sdnowd spafar 1ay}O pue e7[aP uoTeVII[IIIV jo MoTADY auIuliejap 0} srajyouresed patjfoads Jo yuauainsvayl (dutjo4o aanjyeraduia}) yooys [eurreyL ul-uing Z kejdstp adoag 9 dnory saajawrered q dnoay patstoads jo yuaueinsea 7 aSei0js aanzeraduia}-YStH y dnory + GdLT Ayjzea 0} 4 SUTUOT}TPUOD 4 SUTUOTFIPUOD $}$9} UOT}ad su] aramod yUs0I1eg OOT ssa00aid quad1ag 00T gadA} XILNVE 1OF pasodoad sjo'y qoafar 0 9 dnoiy NVE ydao0e J0F q dnosy (X.L-UON) (surTeas) Araaryap fg{ eTeP DO pues pg yw dnoiy gad 4} uotyerado Ajquiasse 10J q y sdnow3 dL Appzaa 07 NVf&E 10 [euly 1ayye paurszoj uotjeredatg JO MOyJAdY $4S89} uoT}Oadsu] pasodoid s}0T sjOoL UoT}Iedsu] dutssa001d 10}7981 Z Telsayew Mey T ssao0ad uolpNpoitg 12MIL -S-19500/424 MIL SPECS Tc ffooo0125 ooowosa 3 5. PREPARATION FOR DELIVERY 5.1 Preparation for delivery. Preparation for delivery shall be in accordance with MIL-S-19500. 6. NOTES 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. Custodians: Preparing activity: Army - EL Air Force - 17 Navy - EC Air Force - 17 Agent: DSA - ES Review activities: Army - MU, MI (Project 5961-0104) Navy - SH Air Force - 11, 85 DSA - ES User activities: Army - SM Navy - CG, MC, OS, AS Air Force - 19 13