N02L083WC2A - N/A - Datasheet.Live

NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com N02L083WC2A

(DOC# 14-02-015 REV E ECN# 01-0998) 1

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

2Mb Ultra-Low Power Asynchronous CMOS SRAM

256K × 8 bit

Overview

The N02L083WC2A is an integrated memory

device containing a 2 Mbit Static Random Access

Memory organized as 262,144 words by 8 bits. The

device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with two chip enable

(CE1 and CE2) controls and output enable (OE) to

allow for easy memory expansion. The

N02L083WC2A is optimal for various applications

where low-power is critical such as battery backup

and hand-held devices. The device can operate

over a very wide temperature range of -40oC to

+85oC and is available in JEDEC standard

packages compatible with other standard 256Kb x

8 SRAMs

Features

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

2.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

0.8mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

• Very fast output enable access time

30ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

Pin Configuration

Product Family

Part Number Package Type Operating

Temperature

Power

Supply (Vcc) Speed

Standby

Current (ISB),

Typical

Operating

Current (Icc),

Typical

N02L083WC2AT 32 - TSOP I

-40oC to +85oC2.3V - 3.6V 55ns @ 2.7V

70ns @ 2.3V 2 µA2 mA @ 1MHz

N02L083WC2AN 32 - STSOP I

N02L083WC2AT2 32 - TSOP I Green

N02L083WC2AN2 32 - STSOP I Green

N02L083WC2A

STSOP-I, TSOP-I

A11

A13

CE2

A15

VCC

A17

A16

A14

A12

A10

CE1

I/O7

I/O6

I/O5

I/O4

I/O3

VSS

I/O2

I/O1

I/O0

Pin Descriptions

Pin Name Pin Function

A0-A17 Address Inputs

WE Write Enable Input

CE1, CE2 Chip Enable Input

OE Output Enable Input

I/O0-I/O7Data Inputs/Outputs

VCC Power

VSS Ground

(DOC# 14-02-015 REV E ECN# 01-0998) 2

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

Functional Block Diagram

Functional Description

CE1 CE2 WE OE I/O0 - I/O7MODE POWER

H X X X High Z Standby1

1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated

from any external influence and disabled from exerting any influence externally.

Standby

X L X X High Z Standby1Standby

LHL

2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.

Data In Write2Active

LHHL Data Out Read Active

L H H H High Z Active Active

Capacitance1

1. These parameters are verified in device characterization and are not 100% tested

Item Symbol Test Condition Min Max Unit

Input Capacitance CIN VIN = 0V, f = 1 MHz, TA = 25oC8pF

I/O Capacitance CI/O VIN = 0V, f = 1 MHz, TA = 25oC8pF

Control

Logic

Page

Decode

Logic

Address

Inputs

A4 - A17

Input/

Output

Mux

and

Buffers I/O0 - I/O7

Address

Word

Decode

Logic

Address

Inputs

A0 - A3

16K Page

x 16 word

x 8 bit

RAM Array

Word Mux

CE1

CE2

(DOC# 14-02-015 REV E ECN# 01-0998) 3

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

Absolute Maximum Ratings1

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operating section of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Item Symbol Rating Unit

Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V

Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V

Power Dissipation PD500 mW

Storage Temperature TSTG –40 to 125 oC

Operating Temperature TA-40 to +85 oC

Soldering Temperature and Time TSOLDER 260oC, 10sec oC

Operating Characteristics (Over Specified Temperature Range)

Item Symbol Test Conditions Min. Typ1

1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.

Max Unit

Supply Voltage VCC 2.3 3.0 3.6 V

Data Retention Voltage VDR Chip Disabled31.8 V

Input High Voltage VIH 1.8 VCC+0.3 V

Input Low Voltage VIL –0.3 0.6 V

Output High Voltage VOH IOH = 0.2mA VCC–0.2 V

Output Low Voltage VOL IOL = -0.2mA 0.2 V

Input Leakage Current ILI VIN = 0 to VCC 0.5 µA

Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA

Read/Write Operating Supply Current

@ 1 µs Cycle Time2

2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive

output capacitance expected in the actual system.

ICC1

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0 2.0 4.0 mA

Read/Write Operating Supply Current

@ 70 ns Cycle Time2ICC2

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0 12.0 16.0 mA

Page Mode Operating Supply Current

@ 70 ns Cycle Time2 (Refer to Power

Savings with Page Mode Operation

diagram)

ICC3

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0 4.0 mA

Read/Write Quiescent Operating Sup-

ply Current3

3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all

inputs must be within 0.2 volts of either VCC or VSS.

ICC4

VCC=3.6 V, VIN=VIH or VIL

Chip Enabled, IOUT = 0,

f = 0

3.0 mA

Maximum Standby Current3ISB1

VIN = VCC or 0V

Chip Disabled

tA= 85oC, VCC = 3.6 V

2.0 20.0 µA

Maximum Data Retention Current3IDR

VCC = 1.8V, VIN = VCC or 0

Chip Disabled, tA= 85oC10.0 µA

(DOC# 14-02-015 REV E ECN# 01-0998) 4

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

Power Savings with Page Mode Operation (WE = VIH)

Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal

organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power

saving feature.

The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open

and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant

bits and addressing the 16 words within the open page, power is reduced to the page mode value which is

considerably lower than standard operating currents for low power SRAMs.

Page Address (A4 - A17)

CE1

CE2

Word Address (A0 - A3)

Open page

Word 1 Word 2 Word 16

...

(DOC# 14-02-015 REV E ECN# 01-0998) 5

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

Timing Test Conditions

Item

Input Pulse Level 0.1VCC to 0.9 VCC

Input Rise and Fall Time 5ns

Input and Output Timing Reference Levels 0.5 VCC

Output Load CL = 30pF

Operating Temperature -40 to +85 oC

Timing

Item Symbol

2.3 - 3.6 V 2.7 - 3.6 V

Units

Min. Max. Min. Max.

Read Cycle Time tRC 70 55 ns

Address Access Time tAA 70 55 ns

Chip Enable to Valid Output tCO 70 55 ns

Output Enable to Valid Output tOE 35 30 ns

Chip Enable to Low-Z output tLZ 10 10 ns

Output Enable to Low-Z Output tOLZ 55ns

Chip Disable to High-Z Output tHZ 020015ns

Output Disable to High-Z Output tOHZ 020015ns

Output Hold from Address Change tOH 10 10 ns

Write Cycle Time tWC 70 55 ns

Chip Enable to End of Write tCW 50 45 ns

Address Valid to End of Write tAW 50 45 ns

Write Pulse Width tWP 40 35 ns

Address Setup Time tAS 00ns

Write Recovery Time tWR 00ns

Write to High-Z Output tWHZ 20 15 ns

Data to Write Time Overlap tDW 40 35 ns

Data Hold from Write Time tDH 00

End Write to Low-Z Output tOW 55ns

(DOC# 14-02-015 REV E ECN# 01-0998) 6

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)

Timing Waveform of Read Cycle (WE=VIH)

Address

Data Out

tRC

tAA

tOH

Data ValidPrevious Data Valid

Address

Data Valid

tRC

tAA

tCO

tHZ

tOHZ

tOLZ

tOE

tLZ

High-Z

Data Out

CE1

CE2

(DOC# 14-02-015 REV E ECN# 01-0998) 7

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

Timing Waveform of Write Cycle (WE control)

Timing Waveform of Write Cycle (CE1 Control)

Address

Data In

CE1

CE2

Data Valid

tWC

tAW

tCW

tWR

tWHZ

tDH

High-Z

Data Out

High-Z

tOW

tAS tWP

tDW

Address

Data Valid

tWC

tAW

tCW

tWR

tDH

Data In

High-Z

tAS

tWP

tLZ

tDW

Data Out

tWHZ

CE1

(for CE2 Control, use

inverted signal)

(DOC# 14-02-015 REV E ECN# 01-0998) 8

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

32-Lead TSOP-I Package (T32)

Note:

1. All dimensions in millimeters

2. Package dimensions exclude molding flash

20.0±0.20

8.0±0.10

SEE DETAIL B

1.10±0.15

18.40±0.10

0.27

0.17

0.50mm REF

DETAIL B

0.80mm REF

0o-8o

0.20

0.00

(DOC# 14-02-015 REV E ECN# 01-0998) 9

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

32-Lead STSOP-I Package (N32)

Note:

1. All dimensions in millimeters

2. Package dimensions exclude molding flash

13.40±0.20

8.0±0.10

SEE DETAIL B

1.10±0.15

11.80±0.10

0.27

0.17

0.50mm REF

DETAIL B

0.80mm REF

0o-8o

0.20

0.00

(DOC# 14-02-015 REV E ECN# 01-0998) 10

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc. N02L083WC2A

Ordering Information

NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.

NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-

poses only and they vary depending upon specific applications.

NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application

or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp

product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Revision History

Revision # Date Change Description

A Jan 2001 Initial Advance Release

B Mar 2001

Added Table 3: Capacitance

Revised quiescent operating current, changed pin 31 to CE1, modified

table 1 and figure 2, other minor edits

C Dec. 2001

Part number change from EM256L08, modified Overview and Features, added

Page Mode Operation diagram and Package diagram, revised Operating Char-

acteristics table, Functional Description table, Timing diagrams, and Ordering

Information diagram

D Nov. 2002 Replaced Isb and Icc on Product Family table with typical values

E Oct. 2004 Added Green Package Option

N02L083WC2AX-XX X

I = Industrial, -40°C to 85°C

55 = 55ns

T = 32-pin TSOP I

N = 32-pin STSOP I

T2 = 32-pin TSOP I Green Package

N2 = 32-pin STSOP I Green Package

Temperature

Performance

Package Type