AOD456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD456 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD456 is Pb-free (meets ROHS & Sony 259 specifications). AOD456L is a Green Product ordering option. AOD456 and AOD456L are electrically identical. VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6 m (VGS = 10V) RDS(ON) <10 m (VGS = 4.5V) 193 18 TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C V A 150 IAR 30 A EAR 45 mJ 50 50 3 W 2.1 TJ, TSTG C -55 to 175 Symbol t 10s Steady-State Steady-State W 25 PDSM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 20 ID IDM PD TA=25C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 50 TC=100C Pulsed Drain Current Avalanche Current Maximum 25 RJA RJC Typ 15 41 2.1 Max 20 50 3 Units C/W C/W C/W AOD456 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A ID(ON) On state drain current VGS=10V, VDS=5V Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge nA 3 V 5 6 100 A 7.3 8 45 DYNAMIC PARAMETERS Ciss Input Capacitance Coss 100 VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current A 1.74 VGS=4.5V, ID=20A VSD IS V 5 1 TJ=125C Forward Transconductance Units 1 VGS=10V, ID=30A gFS Max 25 TJ=55C VGS(th) Static Drain-Source On-Resistance Typ VDS=20V, VGS=0V IGSS RDS(ON) Min 0.74 1850 VGS=0V, VDS=12.5V, f=1MHz m 10 S 1 V 50 A 2220 pF 472 pF 275 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A pF 0.86 1.5 31.7 38 nC 15.7 19 nC Qgs Gate Source Charge 5.8 nC Qgd Gate Drain Charge 8.2 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 14 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/s 30.9 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 20.3 VGS=10V, VDS=12.5V, RL=0.625, RGEN=3 30 ns 11.5 ns 37 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V 6V 80 50 5V VDS=5V 40 60 4.0V ID(A) ID (A) 4.5V 40 30 125C 20 VGS=3.5 20 25C 494 692 10 0 593 830 0 0 1 2 3 4 5 1 2 3 10 5 193 18 Normalized On-Resistance 1.8 8 VGS=4.5V 6 VGS=10V 4 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics RDS(ON) (m) 4.63 1.6 VGS=10V, 20A 1.4 1.2 VGS=4.5V, 20A 1 2 0 10 20 30 40 50 0.8 60 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 59 100 142 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 100 12 10 ID=20A 10 125C 1 IS (A) RDS(ON) (m) 25 8 0.1 0.01 125C 25C 0.001 6 0.0001 25C 0.00001 4 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=12.5V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 2000 1500 4.63 Coss 1000 494 692 500 593 830 Crss 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 200 10s RDS(ON) limited 160 100s 10 DC Power (W) ID (Amps) 193 18 TJ(Max)=175C, TA=25C 100 1ms 1 TJ(Max)=175C TA=25C 120 80 40 0.1 0.1 1 10 100 VDS (Volts) 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 0 0.0001 0.001 0.01 59 0.1 142 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJC Normalized Transient Thermal Resistance 25 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD456 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 tA = 50 L ID BV - VDD Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 30 20 TA=25C 10 50 40 30 4.63 20 494 692 10 0 0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 T CASE (C) Figure 13: Power De-rating (Note B) 60 50 50 40 40 Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 30 20 175 193 18 TA=25C 30 20 10 10 0 0 25 50 75 100 125 150 0 0.01 175 TCASE (C) Figure 14: Current De-rating (Note B) 10 ZJA Normalized Transient Thermal Resistance 593 830 0.1 1 59 142 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W Single Pulse PD Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000