PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C * Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.10V G @VGE = 15V, IC = 12A E n-channel Benefits * Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost PFC topologies 150W and higher * Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) D 2 Pak Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 23 12 92 92 20 180 100 42 -55 to + 150 V A V mJ W C 300 (0.063 in. (1.6mm from case ) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient, ( PCB Mounted,steady-state)* Typ. Max. Units --- --- 1.2 40 C/W * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 8/13/98 IRG4BC30W-S Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.34 -- V/C VGE = 0V, IC = 1.0mA -- 2.1 2.7 IC = 12A VGE = 15V Collector-to-Emitter Saturation Voltage -- 2.45 -- IC = 23A See Fig.2, 5 V -- 1.95 -- IC = 12A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 11 16 -- S VCE = 100 V, IC = 12A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 51 7.6 18 25 16 99 67 0.13 0.13 0.26 24 17 150 150 0.55 7.5 980 71 18 Max. Units Conditions 76 IC = 12A 11 nC VCC = 400V See Fig.8 27 VGE = 15V -- -- TJ = 25C ns 150 IC = 12A, VCC = 480V 100 VGE = 15V, RG = 23 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 13, 14 0.35 -- TJ = 150C, -- IC = 12A, VCC = 480V ns -- VGE = 15V, RG = 23 -- Energy losses include "tail" -- mJ See Fig. 11,13, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30W-S 5.0 For both: 4.0 Load C u rren t (A ) Triangular wave: Duty cycle: 50% T J = 125C T sink= 90C Gate drive as specified Power Dissipation = 1.75W Clamp voltage: 80% of rated 3.0 Square wave: 60% of rated voltage 2.0 1.0 Ideal diodes A 0.0 0.1 1 10 100 1000 f, F req uen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=IPK) 100 TJ = 150 C 10 TJ = 25 C V GE = 15V 20s PULSE WIDTH 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 0.1 5.0 V CC = 50V 5s PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 11.0 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 M a xim u m D C C o lle c to r C u rre n t (A IRG4BC30W-S 25 3.0 VCE , Collector-to-Emitter Voltage(V) V GE = 15V 20 15 10 5 A 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH I C = 24 A 2.5 I C = 12 A 2.0 1.5 -60 -40 -20 0 20 40 60 6A 80 100 120 140 160 TJ , Junction Temperature ( C) TC , C a s e Te m p e ra tu re (C ) Fig. 4 - Maximum Collector Current vs. Temperature IC = Case Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30W-S 2000 20 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 1500 Cies 1000 Coes 500 Cres 16 12 8 4 0 0 1 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 0.4 I C = 12A 0.3 0.2 0.1 0.0 10 20 30 40 RGR,G,Gate GateResistance Resistance(Ohm) () Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 20 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 0 10 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) VCC = 400V I C = 12A 50 23 RG = Ohm VGE = 15V VCC = 480V IC = 24 A 1 IC = 12 A IC = 6A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30W-S RG TJ VCC VGE 1000 23 = Ohm = 150 C = 480V = 15V I C , C ollector-to-E m itter C urrent (A ) Total Switching Losses (mJ) 1.5 1.0 0.5 100 S A FE O P E R A TIN G A R E A 10 1 0 .1 0.0 0 5 10 15 20 25 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGGE E= 2 0V T J = 12 5 C 30 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC30W-S L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V 9 0% 1 0% VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5 s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4BC30W-S D2Pak Package Outline 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 1 .4 0 (.0 55 ) M A X. -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 2 1 .7 8 (.0 7 0 ) 1 .2 7 (.0 5 0 ) 1 1 0 .1 6 (.4 0 0 ) REF . -B - 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 6 .4 7 (.2 5 5 ) 6 .1 8 (.2 4 3 ) 1 5 .4 9 (.6 1 0 ) 1 4 .7 3 (.5 8 0 ) 3 2 .7 9 (.1 1 0 ) 2 .2 9 (.0 9 0 ) 2 .6 1 (.1 0 3 ) 2 .3 2 (.0 9 1 ) 5 .2 8 (.2 0 8 ) 4 .7 8 (.1 8 8 ) 3X 1 .4 0 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 3X 5 .0 8 (.2 0 0 ) 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .2 5 (.0 1 0 ) M 8 .8 9 (.3 5 0 ) REF. 1 .3 9 (.0 5 5 ) 1 .1 4 (.0 4 5 ) B A M M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .43 (.4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 8 .8 9 (.3 5 0 ) 1 7 .7 8 (.7 0 0 ) 3 .8 1 (.1 5 0 ) 2 .0 8 (.0 8 2 ) 2X 2 .5 4 (.1 0 0 ) 2X WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice.8/98 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/