Characteristics STTH1002C
2/17 DocID10182 Rev 8
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
IF(RMS) Forward rms current I2PAK, D2PAK,TO-220AB, TO-220FPAB 20 A
DPAK 10
IF(AV) Average forw ard current
= 0.5, square wa ve
I2PAK, DPAK,
D2PAK,TO-220AB
Tc = 155 °C Per diode 5
A
Tc = 150 °C Per device 10
Tc = 135 °C Per diode 8
Tc = 125 °C Per device 16
TO-220FPAB
Tc = 140 °C Per diode 5
Tc = 120 °C Per device 10
Tc = 110 °C Per diode 8
Tc = 75 °C Per device 16
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A
Tstg St orage temperature range -65 to +175 °C
TjMaximum operating junction temperature 175 °C
Table 3. Thermal parameter
Symbol Parameter Max. value Unit
Rth(j-c) Junction to case
I2PAK, DPAK, D2PAK,TO-220AB Per diode 4.0
°C/W
Per device 2.5
TO-220FPAB Per diode 6.5
Per device 5.0
Rth(c) Coupling I2PAK, DPAK, D2PAK,TO-220AB 1.0
TO-220FPAB 3.5