AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
Austin Semiconductor, Inc.
PRELIMINARY
Solid State Disk On Chip
(SSDoC)
FEATURES
•Capacities
-4 GB
-8 GB
-16 GB
•PATA Compatibility
- ATA-5 compatible
-UDMA4 supported
-PIO Mode 4 supported
-MWDMA Mode 2 supported
•Performance
-Sustained Sequential Read Bandwidth:16 MB/s
-Sustained Sequential Write Bandwidth: 5 MB/s
•Form Factor
-BGA Package
• 31 mm (W) x 31 mm (L) x 4.2-7.8 mm (H)
• Weighs approximately 11 grams (TYP)
•Each NAND component, either a 4, 8 or 16Gb
device, based on the use of single and stacked
silicon solutions
•ECC correction = 6 Bytes within a 512 Byte
sector
•Automatic sleep mode
•Controller contained in base interposer
•SLC (Single-Level Cell) NAND Flash
•Reliability
-Mean Time Between Failure (MTBF)
>2,000,000 Hours (est.)
-Program/Erase >1,000,000 Times (est.)
-Temp Cycle 500/1000 cycles, JEDEC A104
Condition B -55ºC to +125ºC
•Power Supply Voltage: 5.0V or 3.3 V ± 10%
(TYP)
•Power Consumption (Vcc = 5.0 V)
-Idle: 10 mW (TYP)
-Active: 255 mW (TYP)
OVERVIEW
The solid state disk is based on a proprietary
package stacking technology to create an extremely
space conscious, robust Solid State Disk. The SSD
is capable of operating in harsh, vibration prone
product platforms such embedded computing
applications, heavy transportation, ultra portables,
handhelds, mobile computing, digital
radio, high-speed networking & enterprise
applications, as well as, military, aerospace and
industrial applications.
For more products and information
please visit our web site at
www.austinsemiconductor.com
•Operating Temperature
-Commercial: 0C to 70C
-Industrial: -45C to 85C
•Shock and Vibration
-Shock: 1500G MIL-STD0810F
-Vibration: 15 G RMS MIL-STD0810F
•Compliances
-Lead free
-RoHS
- Sn/Pb Ball Option
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
PRELIMINARY
KEY FEATURES
•NAND FLASH Controller
•(2) stacks, each containing (2 or 4) NAND components
•Each NAND component, either a 4,8 or 16Gb device, based on the use of single
•silicon and stacked silicon solutions
•Providing a total bit density of either 4,8 or 16GB
•Controller contained in base interposer
•Fast ATA host to buffer transfer rates supporting True IDE, PIO/4 mode support
•512Byte Sector Buffers
•Flash Memory power-down logic
•ECC correction = 6 Bytes within a 512 Byte sector
•Automatic Sleep Mode
•Burst Transfer rate, 16.67MB per second
•Sustained Transfer rate: 6.7MB per second
•Sophisticated Wear Leveling
ARCHITECTURE
The PATA controller in the PATA Solid State Drive utilizes a 32-bit RISC architecture which provides for
direct connection of one, two or four NAND flash memory devices (2 per channel). An on-chip error
correction code (ECC) and cyclic redundancy check (CRC) unit generates the required code bytes
facilitating error detection and correction of up to six bytes per 512 byte data sector. On the fly code
byte generation for read and write operations minimizes ECC performance impacts.
The controller’s flash memory interface allows the direct connection of up to 10 chips and support
Samsung (NAND) type flash memory. ASI PATA Solid State Drives use single level cell (SLC) Samsung
NAND Flash Memory devices.
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
PRELIMINARY
BLOCK DIAGRAM
16 Gb
16 Gb
16 Gb
16 Gb
16
Gb
Dual
enable
NAND
16
Gb
Dual
enable
NAND
16
Gb
Dual
enable
NAND
16
Gb
Dual
enable
NAND
Controller
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
16 Gb
Dual
enable
NAND
IDE Interface
NAND
NAND
NAND
NAND
REGULATORY COMPLIANCE
Since the PATA SSD is a component (or a set of components depending on the configuration) on the
motherboard, system certifications are the responsibility of the OEM or ODM.
DEVICE COMPLIANCE
Compliance Description
PB Free Components and materials are lead free.
RoHS Restriction of Hazardous Substance Directive
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
PRELIMINARY
PRODUCT SPECIFICATIONS
OPERATING CONDITIONS
Maximum Ratings
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not guaranteed.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Capacity and User Addressable Sectors
Unformatted User Addressable Sector in LBA mode
4GB* 7,880,544
8GB* 15,761,088
16GB* 31,522,176
Note: Formatting and other functions will use some of the space, thus
the listed capacity will not be available entirely for data storage.
Read and Write Perfomance
Operation Access Type MB/second
READ Sustained Sequential Read Bandwidth 16 MB/second
WRITE Sustained Sequential Write Bandwidth 5 MB/second
Absolute Maximum Ratings by Device
Parameter Symbol Max. Min. Unit
Vcc supply voltage Vcc_P -0.5 +5.5 V
Non-Operation Temperature Ti -40 +85 oC
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
PRELIMINARY
OPERATING CONDITIONS (continued)
Recommended Operating Conditions
Operating Temperature and Voltages
Parameter Symbol Max. Typ Min. Unit
Industrial: 0oC to +70oCT00-70
oC
Commercial: -40oC to +85oCT00-70
oC
Tcc_P 4.5 5 5.5 V
Tcc_P 3.0 3.3 3.6 V
Ground supply voltage GndPLN 0 0 0 V
Vcc supply voltage
DC Characteristics (PATA controller configuration)
Symbol Paramenter Min. Max. Units Conditions
V
IL
Input LOW Voltage -0.3 +0.8 V
V
IH
Input HIGH Voltage 2.2 Vcc+0.3 V
V
OL
Output LOW Voltage 0.45 V I
OL
=4mA
V
OH
Output HIGH Voltage 2.4 V I
OH
=-1mA
Operating Current, V
CC_R
=5.0V
Sleep Mode 0.2 mA
Operating, 20 MHz 30 mA
Operating, 40 MHz 50 mA
Operating Current, V
CC_R
=3.3V
Sleep Mode .02 m
Operating, 20 MHz 30 m
Operating, 40 MHz 50 m
I
LI
Input Leakage Current ±10 μA
I
LO
Output Leakage Current ±10 μA
C
I/O
Input / Output Capacitance 10 pF
I
CC
I
CC
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
Austin Semiconductor, Inc.
PRELIMINARY
ELECTRICAL CHARACTERISTICS
ENVIRONMENTAL CONDITIONS
Altitude
Since there are no moving parts, this device is not susceptible to a lack of air molecules and will oper-
ate correctly to 85,000 feet above sea level.
Power Consumption
Setting Value
Active Idle Current 1.85mA
Active Current 51mA
Active Power 255mW
Idle Power 9.25mW
Temperature Specifications
Mode Max. Min. Unit
Operate - Commercial 0 +70
o
C
Operate - Industrial -40 +85
o
C
Ambient Temperature
Shock and Vibration Characteristics
Condition Value
Operating Shock 1500G MIL-STD-810F
Operating Vibration 15G RMS MIL-STD-810F
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
Austin Semiconductor, Inc.
PRELIMINARY
ENVIRONMENTAL CONDITIONS (continued)
Acoustics
This drive has no moving or noise-emitting parts; therefore, it produces negligible sound (0dB) in all
modes of operation.
Electrostatic Discharge (ESD)
The PATA SSD can withstand an electrostatic discharge of +/- of 2 KV. ESD testing is done to demon-
strate that the units can withstand discharge encountered in normal handling or operations of the
equipment.
Humidity Specifications
Condition Value Unit
Operate non-condensing 5-95 %
Reliability Specifications
Parameter Value
Mean Time Between Failure (MTBF) >2,000,000 Hours (est.)
Program / Erase >1,000,000 Time (est.)
Warranty 2 Years
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
Austin Semiconductor, Inc.
PRELIMINARY
MECHANICAL INFORMATION
PATA SSD (Top, Side and Bottom Views)
Stacks, each containing (2 or 4) NAND Components
29.21 SQ.
31.00 SQ.
1.27mm
1.27mm
o0.76
381 PLCS
7.41mm
0.61mm
7.41mm
0.61mm
5.01mm
0.61mm
(2)high + base
4GB 8GB & 16GB
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
PRELIMINARY
PIN ASSIGNMENTS
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc.
PRELIMINARY
PIN ASSIGNMENTS (continued)
N1
N2
N3
N4
N5
N6
N7
N8
N9
N10
N11
N12
N13
N14
N15
N16
N17
N18
N19
N20
N21
N22
N23
N24
P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
R14
R15
R16
R17
R18
R19
R20
R21
R22
R23
R24
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
T19
T20
T21
T22
T23
T24
U1
U2
U3
U4
U5
U6
U7
U8
U9
U10
U11
U12
U13
U14
U15
U16
U17
U18
U19
U20
U21
U22
U23
U24
V1
V2
V3
V4
V5
V6
V7
V8
V9
V10
V11
V12
V13
V14
V15
V16
V17
V18
V19
V20
V21
V22
V23
V24
W1
W2
W3
W4
W5
W6
W7
W8
W9
W10
W11
W12
W13
W14
W15
W16
W17
W18
W19
W20
W21
W22
W23
W24
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
Y22
Y23
Y24
AA1
AA2
AA3
AA4
AA5
AA6
AA7
AA8
AA9
AA10
AA11
AA12
AA13
AA14
AA15
AA16
AA17
AA18
AA19
AA20
AA21
AA22
AA23
AA24
AB1
AB2
AB3
AB4
AB5
AB6
AB7
AB8
AB9
AB10
AB11
AB12
AB13
AB14
AB15
AB16
AB17
AB18
AB19
AB20
AB21
AB22
AB23
AB24
AC1
AC2
AC3
AC4
AC5
AC6
AC7
AC8
AC9
AC10
AC11
AC12
AC13
AC14
AC15
AC16
AC17
AC18
AC19
AC20
AC21
AC22
AC23
AC24
AD1
AD2
AD3
AD4
AD5
AD6
AD7
AD8
AD9
AD10
AD11
AD12
AD13
AD14
AD15
AD16
AD17
AD18
AD19
AD20
AD21
AD22
AD23
AD24
IDE_D2
IDE_D2
IDE_D2
IDE_D2
IDE_D9
IDE_D9
IDE_D9
IDE_D9
IDE_PIOIS16\
IDE_PIOIS16\
IDE_PIOIS16\
IDE_PIOIS16\
IDE_D10
IDE_D10
IDE_D10
IDE_D10
FC_WP_EN
FC_WP_EN
FC_WP_EN
FC_WP_EN
NC
Vcc_F
Vcc_F
Vcc_F
Vcc_F
Vcc_F
Vcc_F
Vcc_F
Vcc_P
Vcc_P
Vcc_P
IDE_D8
IDE_D8
IDE_D8
IDE_D8
FOUT
VccPLN_IN VccPLN_IN VccPLN_IN
FOUT
FOUT FOUT FOUT
NC
FOUT FOUT FOUT
NC
NC
Vcc_F
Vcc_F
Vcc_F
Vcc_F
COUT
COUT
COUT
COUT
CADJ
CADJ
CADJ
CADJ
Vcc_R
Vcc_R
Vcc_R
Vcc_R
NC
GndPLN
GndPLN
GndPLN
NC
Vcc_R
Vcc_R
Vcc_R
FADJ
FADJ
FADJ
FADJ
FOUT
FOUT
FOUT
IDE_D3
FOUT
FOUT
FOUT
VccNAND_IN GndPLNVccNAND_IN
VccNAND_IN
VccNAND_IN
VccNAND_IN
FC_WP_EN1
FC_WP_EN1
VccNAND_IN
VccNAND_IN
VccNAND_IN VccNAND_IN
VccNAND_IN
GndPLN
GndPLN
GndPLN
GndPLN
VccNAND_IN GndPLN
GndPLN
GndPLN
GndPLN
VccNAND_IN
GndPLN
GndPLN
GndPLN
GndPLN
GndPLN
GndPLN
GndPLN
GndPLN
GndPLN
XTALR Vcc_C Vcc_C Vcc_C
Vcc_C GndPLN GndPLN GndPLN
NC
Vcc_F GndPLN
Vcc_F
GndPLN
Vcc_F
GndPLN
Vcc_F
NC
VccPLN_IN
FC_RESET
VccPLN_IN
VccPLN_IN
VccPLN_IN
VccPLN_IN
VccPLN_IN
VccPLN_IN
XTALI
XTALC
XTALC
XTALR
XTALC
XTALR
XTALC
XTALR
NC
VccPLN_IN
VccPLN_IN
VccPLN_IN
VccPLN_IN
VccPLN_IN
VccPLN_IN
VccPLN_IN
GndPLN
GndPLN
NC
GndPLN
GndPLN
NC
GndPLN
GndPLN
NC
GndPLN
GndPLN
FC_RESET
NC
GndPLN
GndPLN
FC_RESET
NC
GndPLN
GndPLN
XTALI XTALI XTALI
Vcc_C Vcc_C Vcc_C
VccPLN_INVccPLN_INVccPLN_IN
NC
NC
NC
Vcc_F Vcc_F Vcc_F
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
BLANK
FC_RESET
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
Austin Semiconductor, Inc.
PRELIMINARY
SIGNAL DESCRIPTIONS
g
Symbol Type Description
IDE_A0 Output Address bus
IDE_A1 Output
IDE_A2 Output
IDE_D0 Input/Output Data bus. The signals D15..D0 represent the bidirectional
data bus; active high signals a "one".
IDE_D1 Input/Output
IDE_D2 Input/Output
IDE_D3 Input/Output
IDE_D4 Input/Output
IDE_D5 Input/Output
IDE_D6 Input/Output
IDE_D7 Input/Output
IDE_D8 Input/Output
IDE_D9 Input/Output
IDE_D10 Input/Output
IDE_D11 Input/Output
IDE_D12 Input/Output
IDE_D13 Input/Output
IDE_D14 Input/Output
IDE_D15 Input/Output
IDE_INTRQ Output Drive interrupt request.
IDE_IOWR\ Input
I/O Data Write Enable is the strobe signal asserted by the
host to write device registers or the data port.
DIOW shall be negated by the host prior to the initiation of
an Ultra DMA burst. STOP shall be negated by the host
before the data is transferred in an Ultra DMA burst. The
assertion of STOP by the host during an Ultra DMA burst
signals the termination of the Ultra DMA burst.
IDE_IORD\ Input I/O Data Read Enable is the strobe signal asserted by the
host to read device registers or the data port.
IDE_CS0\ Input Drive chip select 0 is used by host to select Command
Block registers.
IDE_CS1\ Input Drive chip select 1 is used by host to select Command
Block registers.
IDE_PIOIS16\ Output 16-bit I/O transfer.
IDE_PDIG Input/Output Passed diagnostics.
IDE_DMARQ
IDE_DMARQ\ Output
DMA request. This signal, used for DMA data transfers
between host and device, shall be asserted by the device
when it is ready to transfer data to or from the host. For
multi word DMA transfers, the direction of data transfer is
Controller by IDE_IORD\ and IDE_IOWR\. When a DMS
operation is enabled, CS0\ and CS1\ shall not be asserted
and transfers shall be 16 bits wide. This signal shall be
release when the device is not selected.
FC_WAIT Output Ready signal to IDE_IORDY
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
PRELIMINARY
IDE_PRESET Input Reset
FC_WP_EN
FC_WP_EN1
Input Write protect signal
FC_RESET Input
#
Reset processor. RESET# low resets the processor to the
initial state and halts all activity. RESET# must be low for
at least one cycle. On a transition from low to high, a Reset
exception occurs and the processor starts execution at the
Reset entry determined by the INT4 state. The transition
may occur asynchronously to the clock. We recommend
connecting this pin to a voltage monitoring circuit with
open-drain output (e.g. Torex XC61A) supplying a reset
signal for supply voltages less than 2.6 or 2.7V, connected
to a R/C combination of 100 kΩ and 100 nF giving an
additional reset delay in the order of 10 ms.
FC_LED\ Output Operation LED signal
FC_MODE
FC_IDEEN Output Master/Slave select and connect to IDE_CSEL for Cable
select option
XTALR Output R/C Clock Oscillator Resistor Output. The resistor
connected between this pin and XTALI determines the
operating clock frequency. Use a 470Ω resistor to obtain a
frequency of about 20 MHz
XTALC Output R/C Clock Oscillator Capacitor Output. Connect a 22pF
capacitor between this pin and XTALI.
XTALI Input R/C Clock Oscillator Input. This input connects to the other
side of the resisors and the capacitor connected to XTALR1,
XTALR2 and XTALC. Connect a 22pF capacitor from this pin
to ground.
NC Not connected
Vcc_C Supply
Power Supply Voltage, Core
Vcc_R Supply Power Supply Voltage, Regulator
Vcc_F Supply Power Supply Voltage, Flash Memory
Vcc_P Supply Power Supply Voltage, controller
FADJ Input 3.3V Flash Memory Power Supply Adjustment. Connect a
270pF capacitor from this pin to FOUT.
FOUT Output 3.3V Flash Memory Power Supply. This output provides a
regulated 3.3V supply if the power supply voltage is above
3.3V. This supply voltage must also be connected to the
VCC_F pins.
CADJ Input 2.5V Core Power Supply Adjustment. Connect a 220kΩ
resistor from this pin to GND, a 220kΩ resistor from this
pin to COUT, and a 270pF capacitor from this pin to COUT.
COUT Output 2.5V Core Power Supply. This output provides a regulated
2.5V supply if the power supply voltage is above 3.3V. This
supply voltage must be connected to the VCC_C pins.
VccNAND_IN Supply 3.3V Flash Memory Power Supply
VccPLN_IN Supply Supply to the controller
GndPLN Supply Supply ground
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
Austin Semiconductor, Inc.
PRELIMINARY
TYPICAL APPLICATION DESIGN
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
Austin Semiconductor, Inc.
PRELIMINARY
COMMAND SETS
The PATA SSD device supports all the mandatory ATA commands as defined in the ATA/ATAPI-5 specifi-
cation.
ATA General Feature Command Set
The PATA SSD device supports the ATA General Feature command set.
Common Name Code
EXECUTE DEVICE DIAGNOSTIC 90h
IDENTIFY DEVICE ECh
IDENTIFY DEVICE DMA EEh
INITIALIE DRIVE PARAMETERS 91h
NOP 00h
READ BUFFER E4h
READ DMA C8h, C9h
READ LONG 22h, 23h
READ MULTIPLE C4h
READ NATIVE MAX ADDRESS F8h
READ SECTOR(S) 20h, 21h
READ VERIFY SECTOR(S) 40h, 41h
RECALIBRATE 1Xh
SEEK 7Xh
SET FEATURES EFh
SET MULTIPLE MODE C6h
SMART B0h
TRANSLATE SECTOR 87h
WRITE BUFFER E8h
WRITE DMA CAh, CBh
WRITE LONG 32h, 31h
WRITE MULTIPLE C5h
WRITE MULTIPLE without ERASE CDh
WRITE SECTOR(S) 30h, 31h
WRITE SECTOR(S)without ERASE 38h
WRITE VERIFY 3Ch
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
Austin Semiconductor, Inc.
PRELIMINARY
REFERENCE
This document also references standards and specifications defined by a variety of organizations.
Please use the following information to identify the location of an organization's standards information.
DateorRevisionNumbe
r
Title Location
February2000 ATAͲ5
http://www.t13.org/Documents/
UploadedDocuments/project/d1321r3Ͳ
ATAATAPIͲ5.pdf
December2004
JEDECStandardJESD22ͲC101C:
FieldͲInduced
ChargedͲDeviceModelTest
MethodforElectrostaticͲ
DischargeͲWithstandThresholds
ofMicroelectronicComponents
http://www.jedec.org/download/search/
default2.cfm
March2006
HyperstonF2Ͳ16x,32ͲBitFlashMemory
ControllerSpecification http://www.hyperstone.com/fmc_f2_en,15593.html
January2007
JEDECStandard:Electrostatic
Discharge(ESD)Sensitivity
TestingHumanBodyModel(HBM)
http://www.jedec.org/download/search/
default2.cfm
GLOSSARY
This document incorporates many industry and device specific words. Use the following list to define a
variety of terms and acronyms.
yy
Term Definition
ATA Advanced Technology Attachment
CFA CompactFlash Association
CPRM Content Protection for Recordable Media
CRC Cyclic Redundancy Check
DMA Direct Memory Access
ECC Error Correction Code
ESD Electrostatic Discharge
HDD Hard Disk Drive
HPA Host Protected Area
IDE Integrated Device Electronics
LBA Logical Block Addressing
MTBF Mean Time Between Failure
MWDMA Multi-word DMA
ODM Original Design Manufacturer
OEM Original Equipment Manufacturer
PATA Parallel ATA
PCMCIA Personal Computer Memory Card International Assocoation
PIO Programmable Input / Output
SATA Serial ATA
SSD Solid state drive
UMDA Ultra DMA, also know Ultra ATA
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
Austin Semiconductor, Inc.
PRELIMINARY
ORDER CHART
PartNumber StorageDensity SustainedTransferRate
AS3SSD4GB8PBGR/IT 4GB 7.7MB/sec
AS3SSD8GB8PBGR/IT 8GB 7.7MB/sec
AS3SSD16GB5PBGR/IT 16GB 5.0MB/sec
AS3SSD4GB8PBGR/CT 4GB 7.7MB/sec
AS3SSD8GB8PBGR/CT 8GB 7.7MB/sec
AS3SSD16GB5PBGR/CT 16GB 5.0MB/sec
AvailableProcesses
CT=CommercialTemperatureRange 0
o
Cto+70
o
C
IT=IndustrialTemperatureRange Ͳ40°Cto+85°C
R=RoHSCompliant/LeadFree
Blank=Sn/PbFinishOption
AUSTIN SEMICONDUCTOR, INC.
SOLID STSOLID ST
SOLID STSOLID ST
SOLID STAA
AA
ATE DISKTE DISK
TE DISKTE DISK
TE DISK
AS3SSD4GB8PBG
AS3SSD8GB8PBG
AS3SSD16GB5PBG
AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG
Rev. 1.3 07/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17
Austin Semiconductor, Inc.
PRELIMINARY
DOCUMENT TITLE
4GB, 8GB, 16GB Solid State Disk on Chip
REVISION HISTORY
Rev # History Release Date Status
1.0 Initial Release December 2008 Preliminary
1.1 Updated Mechanical Information January 2009 Preliminary
1.2 Updated Order Chart March 2009 Preliminary
1.3 Updated 4GB & 8GB Drawing July 2009 Preliminary
