TL0640H thru TL3500H
FEATURES
Ox ide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 100A @ 10/1000us or 400
@ 8/20us
High off state Impedance and low on state voltage
P l ast ic mater ial h as UL flam ma b i lity classificat i o n
94V-0
MECHANICAL DATA
Case : Mo l ded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM -
58 to 320
Volts
IPP -
100
Amperes
MAXIMUM RA TINGS
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
THERMAL RESISTANCE
℃
/W
UNIT
SYMBOL
%/
℃
Junction to leads
CHARACTERISTICS
Typical positive temperature coefficient for brekdown v oltage
Rth
(J-L)
△
V
BR
/
△
T
J
0.1
VALUE
20
100
Junction to ambient on print circuit (on recomm ended pad layout)
Rth
(J-A)
℃
/W
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
PP
(A)
500
400
250
200
160
100
I
PP
, PEAK PULSE CURRENT (%)
100
50
0tr tp
TIME
Half value
Peak valu e (Ipp)
tr= rise time to peak value
tp= Deca y time to ha lf va lue
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
℃
Non-repetitiv e peak impulse current @ 10/1000us
CHARACTERISTICS
storage temperature range
I
PP
I
TSM
T
STG
A
A
-55 to +150
VALUE
100
50
Non-repetitiv e peak On-state current @ 8.3ms (one half cycle)
Junct ion temperature range
T
J
-40 to +150
℃
REV. 0, 03-Dec-2001, KDWE01
All Dimensions in millimete r
Max.
Mi n.
DO-201AD
Dim.
A
D
C
B 25.4 9.5 0
-
7.30
1.20
4.80 5.30
1.3 0
DO-201AD
A
C
D
A
B
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
PARAMETER
Stand-off V oltage
Leakage curren t at stand-off v oltage
Breakdown voltage
Breakdown current
Breakover vo ltag e
Ho ldin g current No te: 1
I
H
V
T
I
PP
C
O
On state voltage
Peak pulse cur rent
Off stat e capacitance Note: 2
Breakover current V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
V
I
NOTES: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the T
SPD
Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
RMS
signa l; VR=2 V
DC
bias.
TL0640H
TL0720H
75
58
65
TL0900H
TL1100H
TL1300H
TL1500H
TL1800H
TL2300H
TL2600H
TL3100H
TL3500H
140
90
120
220
160
190
275
320
5
5
5
5
5
5
5
5
5
5
5
98
77
88
180
130
160
300
220
265
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
150
150
150
150
150
150
150
150
150
150
150
200
200
200
120
120
120
80
120
80
80
80
50
50
50
50
50
50
50
50
50
50
50
Max
PARAMETER
SYMBOL
UNITS
LIMIT
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ V
DRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ I
T
=1.0A
HOLDING
CURRENT OFF-STATE
CAPACITANCE
Max Max Max Min Max Min Typ
V
DRM
I
DRM
V
BO
V
T
I
BO
-I
BO+
I
H-
Co
Volts uA Volts Volts mA mA mA pF
ELECTRICAL CHARACTERISTICS @ TA= 25
℃
℃℃
℃
unl ess oth e rwis e specifi e d
TL 0640H t hru TL3500H
BREAKOVER
CURRENT
800
800
800
800
800
800
800
800
800
800
800
Max
I
H+
mA
800
800
800
800
800
800
800
800
800
800
800
REV. 0, 03-Dec-2001, KDWE01
FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE
I(
DRM)
, OFF ST ATE CURRENT (uA)
T
J
, JUNCTION TEMPERATURE (
℃
)
VDRM=50V
100
10
1.0
0.1
0.001
0.01
-25 025 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMALIZED BREAKDO WN VOLTAGE
1.20
1.10
1.05
1.0
0.90
0.95
1.15
VBR (TJ)
VBR (TJ=25
℃
)
100 175
FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE
vs JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMALIZED BREAKOVER VO LTAG E
1.10
1.05
1.0
0.95 100 175
FIG. 3 - RELATIVE VAR IATION OF BREAKOVER VOLTAGE
vs JUNCTI ON TEM P ERATURE
1.0 1.5 2.0 2.5 3.0 3.5 4.54.0 5.0
V (T); ON STATE VOLTAGE
I
(T)
, ON STAT E CURRENT
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
1.0
10
100
TJ=25
℃
T
J
, JUNCTION TEMPERATURE (
℃
)
NORMALIZED HOLDING CURRENT
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT
vs JUNCTION TEMPERATURE
VR, REVERSE VOLTAGE
NORMALIZE CAPACITANCE
FIG. 6 - RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAGE BIAS
RATING AND CHARACTERISTICS CURVES
TL 0640H t hru TL3500H
-50 -25 0 25 50 75 100 125
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1 10 100
0.1
1
Tj =25
℃
f=1MHz
VRMS = 1V
CO(VR)
CO(VR = 1V )
IH (TJ)
IH (TJ=25
℃
)
VBO (TJ)
VBO (TJ=25
℃
)
REV. 0, 03-Dec-2001, KDWE01
The P TC (Pos itive Tem pe rature Co efficien t) is an ove rcurrent pro tection de vice
TELECOM
EQUIPMENT
E.G. MODEM
FUSE
TS PD 1
RING
TIP
TELECOM
EQUIPMENT
E.G. LINE
CARD
RING
TIP
TS PD 2
TS PD 3
PTC
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 1
RING
TIP
TSPD 2
PTC
PTC
TYPICAL CIRCUIT A PPLICATIONS
TL 0640H t hru TL3500H
REV. 0, 03-Dec-2001, KDWE01
