October 2006 / B
Page 1
SEMICONDUCTOR
TAK CHEONG ®
500 mW DO-35 Hermetically
Sealed Glass – High Voltage
Switching Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VRRM Maximum Repetitive Reverse Voltage 250 V
TSTG Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature +175 °C
IF (AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Current
Pulse Width = 1.0 Second
Pulse Width = 1.0 µsecond
1.0
4.0
A
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
PD Power Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
Specification Features:
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
RoHS Compliant
Solder hot dip Tin (Sn) lead finish
Cathode indicated by polarity band
Electrical Characteristics TA = 25°C unless otherwise noted
Limits
Symbol Parameter Test Condition
Min Max
Unit
BV Breakdown Voltage TC BA V19
TCBAV20
TCBAV21
IR=100µA
120
200
250
---
---
---
Volts
Volts
Volts
IR Reverse Leakage Current TCBAV19
TCBAV20
TCBAV21
VR=100V
VR=150V
VR=200V
---
---
---
100
100
100
nA
nA
nA
VF Forward Voltage IF=100mA
IF=200mA
---
---
1.0
1.25
Volts
Volts
TRR Reverse Recovery Time IF=IR=30mA
RL=100Ω
IRR=3mA
--- 50 nS
C Capacitance VR=0V, f =1MHZ --- 5.0 pF
TCBAV19/TCBAV20/TCBAV21
Cathode Anode
ELECTRICAL SYMBOL
L
BA
Vx
x
DEVICE MARKING DIAGRAM
L : Logo
Device Code : TCBAVxx
AXIAL LEAD
DO35