Rev 2.2Page 1 2012-11-29
BSP300
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.0... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS IDRDS(on) Package Marking
BSP300 800 V 0.19 A 20
Ω
PG-SOT223 BSP300
Type RoHS compliant Tape and Reel Information
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TA = 25 °C
ID 0.19
A
DC drain current, pulsed
TA = 25 °C
IDpuls 0.76
Avalanche energy, single pulse
ID = 0.8 A, VDD = 50 V, RGS = 25
Ω
L = 105 mH, Tj = 25 °C
EAS
36
mJ
Gate source voltage VGS
±
20 V
Power dissipation
TA = 25 °C
Ptot 1.8
W
Pb-free lead plating; RoHS compliant
•
BSP300 YesH6327
• Qualified according to AEC Q101
Packaging
Dry
ESD Class
JESD22-A114-HBM
Class 1a
•
HalogenfreeaccordingtoIEC61249221
Rev 2.2Page 2 2012-11-29
BSP300
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) RthJA
≤
70 K/W
Thermal resistance, junction-soldering point 1) RthJS
≤
14
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS 800 - -
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th) 2 3 4
Zero gate voltage drain current
VDS = 800 V, VGS = 0 V, Tj = 25 °C
VDS = 800 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-state resistance
VGS = 10 V, ID = 0.19 A
RDS(on) - 15 20
Ω
BSP300
Electrical Characteristics, at Tj= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 0.19 A
gfs 0.06 0.27 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 170 230
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 20 30
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 10 15
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.25 A
RGS = 50
Ω
td(on)
- 7 11
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.25 A
RGS = 50
Ω
tr
- 16 24
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.25 A
RGS = 50
Ω
td(off)
- 27 36
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.25 A
RGS = 50
Ω
tf
- 21 28
Rev 2.2Page 3 2012-11-29
BSP300
Electrical Characteristics, at Tj= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
IS- - 0.19
A
Inverse diode direct current,pulsed
TA = 25 °C
ISM - - 0.76
Inverse diode forward voltage
VGS = 0 V, IF = 0.38 A, Tj = 25 °C
VSD - 1 1.4
V
Reverse recovery time
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs
trr - 95 -
ns
Reverse recovery charge
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs
Qrr - 0.25 -
µC
Rev 2.2Page 4 2012-11-29
BSP300
Power dissipation
Ptot =
ƒ
(TA)
020 40 60 80 100 120 °C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
Ptot
Drain current
ID =
ƒ
(TA)
parameter: VGS
≥
10 V
020 40 60 80 100 120 °C 160
TA
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
A
0.20
ID
Safe operating area
ID =
ƒ
(VDS)
parameter: D = 0.01, TC = 25°C
-3
10
-2
10
-1
10
0
10
A
ID
10 010 110 210 3
V
VDS
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 760.0µs
Transient thermal impedance
Zth JA =
ƒ
(tp)
parameter: D = tp / T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Rev 2.2Page 5 2012-11-29
BSP300
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs , Tj= 25 °C
04812 16 V24
VDS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
A
0.45
ID
VGS [V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
Ptot = 2W
l 20.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: tp = 80 µs, Tj = 25 °C
0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A0.34
ID
0
5
10
15
20
25
30
35
40
45
50
55
Ω
65
RDS (on)
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS
≥
2 x ID x RDS(on)max
0 1 2 3 4 5 6 7 8 V 10
VGS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A
1.0
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS
≥
2 x ID x RDS(on)max
0.0 0.1 0.2 0.3 0.4 0.5 0.6 A0.8
ID
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
S
0.50
gfs
RevRev 1.0 Page 1 2005-10-27
2012-11-29
6
1
2
.2
BSP300
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 0.19 A, VGS = 10 V
-60 -20 20 60 100 °C 160
Tj
0
5
10
15
20
25
30
35
40
Ω
50
RDS (on)
typ
98%
Gate threshold voltage
VGS (th) =
ƒ
(Tj)
parameter: VGS = VDS,ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
VGS(th)
-60 -20 20 60 100 °C 160
Tj
2%
typ
98%
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f= 1 MHz
0 5 10 15 20 25 30 V40
VDS
0
10
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
-3
10
-2
10
-1
10
0
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Rev 2.2Page 7 2012-11-29
BSP300
Avalanche energy EAS =
ƒ
(Tj)
parameter: ID = 0.8 A, VDD = 50 V
RGS = 25
Ω
,L = 105 mH
20 40 60 80 100 120 °C 160
Tj
0
4
8
12
16
20
24
28
32
mJ
38
EAS
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 160
Tj
720
740
760
780
800
820
840
860
880
900
920
V
960
V(BR)DSS
Rev 2.2Page 8 2012-11-29
Rev 2.2Page 9 2012-11-29
B
SP300
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Infineon:
BSP300 L6327