DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. SPECIFICATION Device Name : Power MOSFET Type Name : FMA10N60E Spec. No. : MS5F6931 Date : Oct.-19-2007 Fuji Electric Device Technology Co.,Ltd. Fuji Electric Device Technology Co., Ltd. MS5F6931 1 / 15 H04-004-05 Date Oct.-19 2007 Classification Index Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. Revised Records Content Drawn Checked Checked Approved enactment MS5F6931 2 / 15 H04-004-03 1.Sco pe This specifies Fuji Power MOSFET FMA10N60E 2.Construction N-Channel enhancement mode power MOSFET 3.Ap plications for Switching 4.Ou tv ie w TO -220F Outview See to 11/15 page 5.Ab solute M aximum Ratings at Tc=25 C (unle ss othe rwise spe cifie d) Description Symbol Drain-Source Voltage Characteristics Unit VD S 600 V VD SX 600 V Remarks VG S=-30V Continuous Drain Current ID 10 A Pulsed Drain Current ID P 40 A G ate-Source Voltage VG S 30 V IAR 10 A Note *1 EAS 416 mJ Note *2 EAR 6.0 mJ Note *3 Peak Diode Recovery dV/dt dV/dt 4.4 kV/s Note *4 Peak Diode Recovery -di/dt -di/dt 100 A/s Note *5 Maximum Power Dissipation PD Repetitive and Non-Repetitive Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy 2.16 W 60 Ta=25 Tc=25 O perating and Storage Tc h 150 T emperature range T s tg -55 to +150 Isolation Voltage VI SO 2 kVrms t=60sec,f=60Hz 6.Ele ctrical Characte ristics at Tc=25 C (un le ss o the rw ise sp e cifie d) Static Ratings Description Symbol Drain-Source Conditions min. typ. max. Unit 600 - - V 2.5 3.0 3.5 V - - 25 ID =250A Breakdown Voltage BV DSS G ate Threshold VG S =0V ID =250A Voltage V GS (th) Zero Gate Voltage Drain Current IDSS G ate-Source Leakage Current IGSS Drain-Source On-State Resistance R DS (on) VD S =V GS VD S =600V VG S =0V VD S =480V VG S =0V T ch =25 A T ch =125 - - 250 - 10 100 nA - 0.675 0.79 VG S = 30V VD S =0V ID =5A VG S =10V Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. Maximum Avalanche Current MS5F6931 3 / 15 H04-004-03 Dynamic Ratings Description Symbol F orward Conditions min. typ. max. Unit V DS =25V 6 12 - S ID =5A Transconductance g f s Input Capacitance Ciss V DS =25V - 1800 2700 Output Capacitance Coss V GS =0V - 140 210 f=1MHz - 10.5 16 td(on) V cc =300V, VGS =10V - 20 30 tr ID =5A, R G=15 - 9 13.5 td(off) See Fig.3 and Fig.4 - 100 150 - 18 27 Reverse Transfer pF Capacitance Crss ns T urn-Off Time tf T otal Gate Charge QG V cc =300V, ID =10A - 47 70.5 Gate-Source Charge Q GS V GS =10V - 10.5 16 Gate-Drain Charge Q GD See Fig.5 - 13.5 20 min. typ. max. Unit 10 - - A - 0.86 1.30 V - 0.51 - s - 5.4 - C min. typ. max. Unit nC Re v e rse Diode Description Symbol Avalanche Capability Conditions L=3.05mH Tch=25 IAV Diode Forward See Fig.1 and Fig.2 IF =10A On-Voltage V SD Reverse Recovery V GS =0V T c h=25 IF =10A, VG S =0V T ime trr Reverse Recovery di / dt =100A/ s, Tch=25 See Fig.6 Charge Qrr 7.The rmal Re sistance Description Symbol Channel to Case Rth(ch-c) 2.083 /W Channel to Ambient Rth(ch-a) 58.0 /W Note *1 : Tch150, See Fig.1 and Fig.2 Note *2 : Stating Tch=25, IAS =4A, L=47.7mH, Vcc=60V, R G=50, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph of page 9/15. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'T ransient Themal impeadance' graph of page 9/15. Note *4 : IF-ID , -di/dt=100A/s, VccBVDSS , Tch150. Note *5 : IF-ID , dv/dt=4.4kV/s, VccBVDSS , Tch150. Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. T urn-On Time MS5F6931 4 / 15 H04-004-03 8.Re liability te st items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail Humidification treatment (852C,655%RH,16824hr) Heat treatment of soldering (Solder Dipping,2605C(265Cmax.),101sec,2 times) Tes t Tes t No. Item s 1 Terminal Strength (Tensile) Mechanical test methods 3 Mounting Strength 4 Vibration 5 Shock Pull force TO-220,TO-220F : 10N TO-3P,TO-3PF,TO-247 : 25N TO-3PL : 45N T-Pack,K-P ack : 10N Force m aintaining duration :305sec Load force TO-220,TO-220F : 5N TO-3P,TO-3PF,TO-247 : 10N TO-3PL : 15N T-Pack,K-P ack : 5N Num ber of times :2tim es(90deg./time) Screwing torque value: (M 3) TO-220,TO-220F : 4010Nc m TO-3P,TO-3PF,TO-247 : 5010N cm TO-3PL : 7010N cm frequency : 100Hz to 2kHz Acc eleration : 200m/s 2 Sweeping time : 4m in. 48m in. for eac h X,Y &Z directions . Peak amplitude: 15km /s 2 Duration time : 0.5ms 3tim es for eac h X,Y &Z directions . 6 Solderability Eac h terminal shall be immers ed in the s older bath within 1 to 1.5mm from the body . Solder alloy: Sn-A g-Cu ty pe 7 Res istance to Soldering Heat Referenc e Sampling A cceptance S tandard number number E IAJ E D4701/400 m ethod 401 15 E IAJ E D4701/400 m ethod 401 15 E IAJ E D4701/400 m ethod 402 15 E IAJ E D4701/400 m ethod 403 15 E IAJ E D4701/400 (0:1) 15 m ethod 404 Solder temp. : 2455C Immersion time : 50.5sec Fuji Electric Device Technology Co., Ltd. ----- E IAJ E D4701/300 m ethod 302 Solder temp. : 2605C Immersion time : 101sec Number of times : 1times Solder alloy: Sn-Ag-Cu type DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. 2 Terminal Strength (B ending) Tes ting methods and Conditions MS5F6931 15 15 5 / 15 H04-004-03 Test Items Testing methods and Conditions Reference Standard 1 High Temp. Storage Temperature : 150+0/-5C Test duration : 1000hr 2 Low Temp. Storage Temperature : -55+5/-0C Test duration : 1000hr 3 Temperature Humidity Storage 4 Temperature Humidity BIAS Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C Relative humidity : 855% Bias Voltage : VDS(max)x0.8 EIAJ ED4701/200 method 201 EIAJ ED4701/200 method 202 EIAJ ED4701/100 method 103 EIAJ ED4701/100 method 103 5 Unsaturated Pressurized Vapor Test duration : 1000hr Temperature : 1302C Relative humidity : 855% Vapor pressure : 230kPa Test duration : 48hr 6 Temperature Cycle High temp.side : 1505C/30min. Low temp.side : -555C/30min. 7 Thermal Shock RT : 5C 35C/5min. Number of cycles : 100cycles Fluid : pure water(running water) High temp.side : 100+0/-5C Low temp.side : 0+5/-0C Endurance test methods Duration time : HT 5min,LT 5min Number of cycles : 100cycles 8 Intermittent Operating Life 9 HTRB (Gate-source) 10 HTRB (Drain-Source) Tc=90degr ee TchTch(max.) Test duration : 3000 cycle Sampling number Acceptance number 22 22 22 22 (0:1) EIAJ ED4701/100 method 103 22 EIAJ ED4701/100 method 105 22 EIAJ ED4701/300 method 307 Temperature : Tch=150+0/-5C Bias Voltage : +VGS(max) EIAJ ED4701/100 method 106 EIAJ ED4701/100 Test duration : 1000hr Temperature : Tch=150+0/-5C Bias Voltage : VDS(max) method 101 EIAJ ED4701/100 Test duration : 1000hr method 101 22 22 22 (0:1) 22 Failure Criteria Symbols Failure Criteria Lower Limit Upper Limit Unit Breakdown Voltage BVDSS LSL ----- V Zero gate Voltage Drain-Source Current IDSS ----- USL A Gate-Source Leakage Current IGSS ----- USL A Gate Threshold Voltage VGS(th) LSL USL V Drain-Source on-state Resistance RDS(on) ----- USL Forward Transconductance gfs LSL ----- S Diode forward on-Voltage VSD ----- USL V Marking Soldering ----- With eyes or Microscope ----- and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150. Fuji Electric Device Technology Co., Ltd. DWG.NO. Electrical Characteristics Item Outview This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. Climatic test methods Test No. MS5F6931 6 / 15 H04-004-03 Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 c Allowable Power Dissipation PD=f(Tc) 2 10 80 t= 1s 70 10s 1 10 60 100s 0 40 ID [A] PD [W] 50 10 1ms 30 10 20 Power loss waveform : Square w aveform -1 PD 10 t DC 10 0 0 25 50 75 100 125 -2 10 150 -1 0 1 10 10 VDS [V] Tc [ C] 20 2 10 3 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 20V 10V 6.0V 10 1 10 0 5.0V ID[A] ID [A] 15 10 4.5V 10 -1 10 -2 10 -3 10 -4 5 VGS=4.0V 0 0 5 10 VDS [V] 15 20 2 3 4 VGS[V] 5 6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 1.3 100 4.5V VGS=4.0V 5V 1.2 1.1 10 6V 10V 20V RDS(on) [ ] 1 1.0 0.9 0.8 0.7 0.1 0.6 0.01 0.01 0.5 0.1 1 10 100 0 5 Fuji Electric Device Technology Co., Ltd. 10 15 20 ID [A] ID [A] DWG.NO. gfs [S] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 10 MS5F6931 7 / 15 H04-004-03 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 6 2.5 5 VGS(th) [V] 2.0 RDS(on) [ ] 1.5 4 max. 3 typ. 2 min. max. 1.0 typ. 0.5 1 0 0.0 -50 -25 0 25 50 Tch [ C] 75 100 125 -50 150 -25 0 50 75 Tch [ C] 100 125 150 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 20 18 10 4 10 3 10 2 10 1 16 14 Ciss Vcc= 120V 300V 12 C [pF] VGS [V] 480V 10 8 Coss 6 4 Crss 2 0 10 0 10 20 30 40 50 60 70 0 80 -2 10 10 -1 0 10 10 1 2 10 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=15 3 10 100 10 td(off) 2 10 t [ns] tf IF [A] 1 td(on) 1 10 tr 0.1 0.01 0.00 0 10 0.25 0.50 0.75 1.00 1.25 1.50 10 -1 VSD [V] Fuji Electric Device Technology Co., Ltd. 0 10 10 1 10 2 ID [A] DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25 C 25 MS5F6931 8 / 15 H04-004-03 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A Transient Thermal Impedance Zth(ch-c)=f(t):D=0 101 600 500 0 10 Zth(ch-c) [ C/W] IAS =4A EAV [mJ] 400 IAS =6A 300 10-1 10 200 -2 IAS =10A 10-3 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t [sec] 0 0 25 50 75 100 125 150 Fig.2 Operating waveforms of Avalanche Test Fig.1 Avalanche Test circuit +10V VGS L -15V 50 BVDSS D.U.T L=3.05mH Vcc=60V Single Plse Test IDP Vcc VDS 0 Fuji Electric Device Technology Co., Ltd. ID DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. starting Tch [ C] MS5F6931 9 / 15 H04-004-03 Fig.3 Switching Test circuit D RG G Oscilloscope S R Fig.4 Operating waveform of Switching Test VDS VGS VDS x90% VDS x10% VGS x10% td(on) VDS x90% VGS x90% VDS x10% tr td(off) tf Fig.6 Operating waveform of Body diode Recovery Test Fig.5 Operating waveform of Gate charge Test VGS IF VDS VGS trr QG (VGS=10V) 10V QGS QGD IRPx10% IRP Qg Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. Vcc trr Qrr=0 irdt MS5F6931 10 / 15 H04-004-03 Outview : TO-220F Package .2 +00.1 .2 3 4.5 0.2 6.3 2.70.2 15 0.3 2.7 0.2 10 0.5 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. 3.7 0.2 1.2 0.2 13 min. 1.2 0.2 Pre-Solder +0.2 0.6 0 2.7 0.2 0.7 0.2 2.54 0.2 2.54 0.2 1 2 Connection 3 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Marking Date code & Lot No. Y: Last digit of year M: Month code 1~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark Trademark Country of origin mark. YMNNN 10N60E " " (Blank): Japan P : Philippines Type name Fuji Electric Device Technology Co., Ltd. DWG.NO. * The font (font type,size) and the trademark-size might be actually different. MS5F6931 11 / 15 H04-004-03 9. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment(Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. The products described in this Specification are not designed or manufactured to be used in equipment or listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Medical equipment Burglar alarms, fire alarms, emergency equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 10. Warnings The MOSFETs should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). The MOSFETs may be destroyed if used beyond the rating. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition .Please note the device may be destructed from the Avalanche over the specified maximum rating. The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction. Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. You must careful handling of MOSFETs for ESD damage is an important consideration. Wh enh an dl i ngMOSFETs ,h ol dt h embyt hec as e( pack age)an ddon ' tt ou c ht h el eadsan dt er mi n al s . It is recommended that any handling of MOSFETs is done while used electrically conductive floor and tablemats that are grounded. Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. systems used under life-threatening situations. If you are considering using these products in the equipment MS5F6931 12 / 15 H04-004-03 Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation ,to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke of flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) Installation Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature 2605 C 35010 C Duration 101 seconds 3.50.5 seconds The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, take care to avoid immersing the package in the solder bath. Refer to the following torque reference When mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended tightening torques. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Screw Tightening torques M3 30 -50 Ncm M3 40 -60 Ncm M3 60 -80 Ncm Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. The MOSFETs should not used in an irradiated field since they are not radiation-proof. Note flatness : < 30m roughness : <10m Plane off the edges : C<1.0mm MS5F6931 13 / 15 H04-004-03 The heat sink should have a flatness within30 m and roughness within 10 m. Also, keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (We recommend plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Storage The MOSFETs must be stored at a standard temperature of 5 to 35 C and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. connections to go fail during later processing. The MOSFETs should be stored in antistatic containers or shipping bags. 11. Compliance with pertaining to restricted substances 11-1) Compliance with the RoHS Regulations and Exemptions This product will be fully compliant with the RoHS directive (Directive 2002/95/EC of the european parliament and the council of 27 January 2003). Five out of six substances below which are regulated by the RoHS directive in Europe are not included in this product. The exception is only lead. The RoHS directive has some exemptions. The following relates to this product : Lead in high melting temperature type solders (Sn-Pb solder alloy which contains more than 85%) This product is used to the high melting temperature type solders (Sn-Pb solders) for die-bonding. Moreover, the terminals used lead-free solder. * The six substances regulated by the RoHS Directive are: Lead, Mercury, Hexavalent chromium, Cadmium, PBB (polybrominated biphenyls), PBDE (polybrominated diphenyl ethers). The maximum concentration value of the six substances in this product conforms to the Commission decision 2005/618/EC of EU of 18 August 2005. 11-2) Compliance with the calss-1 ODS and class-2 ODS. (ODS: Ozone-Depleting Substances) This products does not contain and used t he" Lawc onc e r ni ngt hePr ot ec t i onof t heOz oneLay ert hr ough the Control of Specified Substances and Other Measures( J APAN) " , andthe Montreal Protocol. Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause presoldered MS5F6931 14 / 15 H04-004-03 Fuji Electric Device Technology Co., Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor used for the manufacturing purp oses without the express written cons ent of Fuji Electric D ev ice T echnolog y Co., Ltd. If you have any questions about any part of this Specification, please contact Fuji Electric Device Technology or its sales agent before using the product. Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric Device Technology products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. MS5F6931 15 / 15 H04-004-03