FMA10N60E - Fuji Electric Corp. of America

NAME

APPROVED

Oct.-19-'07

DATE

DRAWN

CHECKED

DWG.NO.

SPECIFICATION

Device Name :

Type Name :

Spec. No. :

Date :

Fuji Electric Device Technology Co.,Ltd.

H04-004-05

FMA10N60E

MS5F6931

1/15

Power MOSFET

Oct.-19-2007

CHECKED

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

DWG.NO.

H04-004-03

MS5F6931

2/15

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

Revised Records

Date Classification

Index

Content Drawn

Checked Checked Approved

enactment

Oct.-19

2007

DWG.NO.

H04-004-03

MS5F6931

3/15

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

1.Scope This specifies Fuji Power MOSFET FMA10N60E

2.Construction N-Channel enhancement mode power MOSFET

3.Applications for Switching

4.Outview TO-220F Outview See to 11/15 page

5.Absolute Maximum Ratings at Tc=25

C (unless otherwise specified)

Description Symbol Characteristics Unit Remarks

VDS 600 V

VDSX 600 V VGS=-30V

Continuous Drain Current ID10 A

Pulsed Drain Current IDP 40 A

Gate-Source Voltage VGS 30 V

Repetitive and Non-Repetitive

Maximum Avalanche Current

Non-Repetitive

Maximum Avalanche Energy

Repetitive

Maximum Avalanche Energy

Peak Diode Recovery dV/dt dV/dt kV/μs

Peak Diode Recovery -di/dt -di/dt A/μs

Ta=25℃

60 Tc=25℃

Operating and Storage Tch 150 ℃

Temperature range Tstg -55 to +150 ℃

Isolation Voltage VISO 2 kVrms t=60sec,f=60Hz

6.Electrical Characteristics at Tc=25C (unless otherwise specified)

Static Ratings

Description Symbol Conditions min. typ. max. Unit

Drain-Source ID=250μA

Breakdown Voltage BVDSS VGS=0V 600 - - V

Gate Threshold ID=250μA

Voltage VGS(th) VDS=VGS 2.5 3.0 3.5 V

Zero Gate Voltage VDS=600V

VGS=0V Tch=25℃- - 25

Drain Current IDSS VDS=480V

VGS=0V Tch=125℃- - 250

Gate-Source VGS=30V

Leakage Current IGSS VDS=0V - 10 100 nA

Drain-Source ID=5A

On-State Resistance RDS(on) VGS=10V - 0.675 0.79 Ω

Drain-Source Voltage

4.4 Note *4

Note *2

EAR 6.0 mJ Note *3

μA

IAR 10 A Note *1

EAS 416 mJ

100 Note *5

Maximum Power Dissipation PD2.16 W

DWG.NO.

H04-004-03

MS5F6931

4/15

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

Dynamic Ratings

Description Symbol Conditions min. typ. max. Unit

Forward ID=5A

Transconductance gf s VDS=25V 6 12 - S

Input Capacitance Ciss VDS=25V - 1800 2700

Output Capacitance Coss VGS=0V - 140 210

Reverse Transfer f=1MHz - 10.5 16 pF

Capacitance Crss

td(on) Vcc=300V, VGS=10V - 20 30

Turn-On Time tr ID=5A, RG=15Ω - 9 13.5

td(off) See Fig.3 and Fig.4 - 100 150 ns

Turn-Off Time tf - 18 27

Total Gate Charge QGVcc=300V, ID=10A - 47 70.5

Gate-Source Charge QGS VGS=10V - 10.5 16 nC

Gate-Drain Charge QGD See Fig.5 - 13.5 20

Reverse Diode

Description Symbol Conditions min. typ. max. Unit

Avalanche Capability L=3.05mH Tch=25℃

IAV See Fig.1 and Fig.2 10 - - A

Diode Forward IF=10A

On-Voltage VSD VGS=0V Tch=25℃- 0.86 1.30 V

Reverse Recovery IF=10A, VGS=0V

Time trr -di/dt=100A/μs, Tch=25℃- 0.51 - μs

Reverse Recovery See Fig.6

Charge Qrr - 5.4 - μC

7.Thermal Resistance

Description Symbol min. typ. max. Unit

Channel to Case Rth(ch-c) 2.083 ℃/W

Channel to Ambient Rth(ch-a) 58.0 ℃/W

Note *1 : Tch150℃, See Fig.1 and Fig.2

Note *2 : Stating Tch=25℃, IAS=4A, L=47.7mH, Vcc=60V, RG=50Ω, See Fig.1 and Fig.2

limited by maximum channel temperature and avalanche current.

See to 'Avalanche Energy' graph of page 9/15.

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

See to the 'Transient Themal impeadance' graph of page 9/15.

Note *4 : IF-ID, -di/dt=100A/μs, VccBVDSS, Tch150℃.

Note *5 : IF

-ID, dv/dt=4.4kV/μs, Vcc

BVDSS, Tch

150℃.

DWG.NO.

H04-004-03

MS5F6931

5/15

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

8.Reliability test items

All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).

Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104

standards.

Test items required without fail

Humidification treatment (85±2°C,65±5%RH,168±24hr)

Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)

Test Test Testing methods and Conditions Reference Sampling Acceptance

No. Items Standard number number

1 Terminal Pull force

Strength TO-220,TO-220F : 10N EIAJ

(Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15

TO-3PL : 45N method 401

T-Pack,K-Pack : 10N

Force maintaining duration :30±5sec

2 Terminal Load force

Strength TO-220,TO-220F : 5N EIAJ

(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15

TO-3PL : 15N method 401

T-Pack,K-Pack : 5N

Number of times :2times(90deg./time)

3 Mounting Screwing torque value: (M3) EIAJ (0:1)

Strength TO-220,TO-220F : 40±10N・cm ED4701/400 15

TO-3P,TO-3PF,TO-247 : 50±10N・cm method 402

TO-3PL : 70±10N・cm

4 Vibration frequency : 100Hz to 2kHz EIAJ

Acceleration : 200m/s2ED4701/400 15

Sweeping time : 4min. method 403

48min. for each X,Y&Z directions.

5 Shock Peak amplitude: 15km/s2EIAJ

Duration time : 0.5ms ED4701/400 15

3times for each X,Y&Z directions. method 404

6 Solderability Solder temp. : 245±5°C

Immersion time : 5±0.5sec

Each terminal shall be immersed in ----- 15

the solder bath within 1 to 1.5mm from

the body.

Solder alloy: Sn-Ag-Cu type

7 Resistance to Solder temp. : 260±5°C EIAJ

Soldering Heat Immersion time : 10±1sec ED4701/300 15

Number of times : 1times method 302

Solder alloy: Sn-Ag-Cu type

Mechanical test methodsMechanical test methods

DWG.NO.

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This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

Failure Criteria Symbols Unit

Lower Limit Upper Limit

Breakdown Voltage BVDSS LSL ----- V

Zero gate Voltage Drain-Source Current IDSS ----- USL A

Gate-Source Leakage Current IGSS ----- USL A

Gate Threshold Voltage VGS(th) LSL USL V

Drain-Source on-state Resistance RDS(on) ----- USL Ω

Forward Transconductance gfs LSL ----- S

Diode forward on-Voltage VSD ----- USL V

Marking

Soldering ----- With eyes or Microscope -----

and other damages

* LSL : Lower Specification Limit * USL : Upper Specification Limit

* Before any of electrical characteristics measure, all testing related to the humidity

have conducted after drying the package surface for more than an hour at 150℃.

Item Failure Criteria

Electrical

Characteristics

Outview

Test Test Testing methods and Conditions Reference Sampling Acceptance

No. Items Standard number number

1 High Temp. Temperature : 150+0/-5°C EIAJ 22

Storage Test duration : 1000hr ED4701/200

method 201

2 Low Temp. Temperature : -55+5/-0°C EIAJ 22

Storage Test duration : 1000hr ED4701/200

method 202

3 Temperature Temperature : 85±2°C EIAJ

Humidity Relative humidity : 85±5% ED4701/100 22

Storage Test duration : 1000hr method 103

4 Temperature Temperature : 85±2°C EIAJ

Humidity Relative humidity : 85±5% ED4701/100 22

BIAS Bias Voltage : VDS(max)×0.8 method 103

Test duration : 1000hr

5 Unsaturated Temperature : 130±2°C EIAJ (0:1)

Pressurized Relative humidity : 85±5% ED4701/100 22

Vapor Vapor pressure : 230kPa method 103

Test duration : 48hr

6 Temperature High temp.side : 150±5°C/30min. EIAJ

Cycle Low temp.side : -55±5°C/30min. ED4701/100 22

RT : 5°C 〜35°C/5min. method 105

Number of cycles : 100cycles

7 Thermal Shock Fluid : pure water(running water)

High temp.side : 100+0/-5°C EIAJ 22

Low temp.side : 0+5/-0°C ED4701/300

Duration time : HT 5min,LT 5min method 307

Number of cycles : 100cycles

8 Intermittent ΔTc=90degree EIAJ

Operating Tch≦Tch(max.) ED4701/100 22

Life Test duration : 3000 cycle method 106

9 HTRB Temperature : Tch=150+0/-5°C EIAJ

(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)

Test duration : 1000hr method 101

10 HTRB Temperature : Tch=150+0/-5°C EIAJ

(Drain-Source) Bias Voltage : VDS(max) ED4701/100 22

Test duration : 1000hr method 101

Climatic test methodsEndurance test methods

DWG.NO.

H04-004-03

MS5F6931

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This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

0 25 50 75 100 125 150

Allowable Power Dissipation

PD=f(Tc)

PD [W]

Tc [C]

0 5 10 15 20

20 20V

ID [A]

VDS [V]

Typical Output Characteristics

ID=f(VDS):80 s pulse test,Tch=25 C

10V

5.0V

6.0V

4.5V

VGS=4.0V

23456

10-4

10-3

10-2

10-1

100

101

ID[A]

VGS[V]

Typical Transfer Characteristic

ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C

0.01 0.1 1 10 100

0.01

0.1

100

gfs [S]

ID [A]

Typical Transconductance

gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C

0 5 10 15 20

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3 4.5V

RDS(on) [ ]

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 s pulsetest,Tch=25 C

10V

20V

VGS=4.0V

10-1 100101102103

10-2

10-1

100

101

102

Power loss waveform :

Square waveform

Power loss waveform :

Square waveform

ID [A]

VDS [V]

Safe Operating Area

ID=f(VDS):Duty=0(Single pulse),Tc=25 c

1s

10s

1ms

100s

DWG.NO.

H04-004-03

MS5F6931

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This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

-50 -25 0 25 50 75 100 125 150

typ.

max.

min.

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250A

VGS(th) [V]

Tch [C]

0 10 20 30 40 50 60 70 80

Qg [nC]

Typical Gate Charge Characteristics

VGS=f(Qg):ID=10A,Tch=25 C

VGS [V]

480V

300V

Vcc= 120V

10-2 10-1 100101102

100

101

102

103

104

C [pF]

VDS [V]

Typical Capacitance

C=f(VDS):VGS=0V,f=1MHz

Crss

Coss

Ciss

0.00 0.25 0.50 0.75 1.00 1.25 1.50

0.01

0.1

100

IF [A]

VSD [V]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 s pulsetest,Tch=25 C

10-1 100101102

100

101

102

103

Typical SwitchingCharacteristics vs. ID

t=f(ID):Vcc=300V,VGS=10V,RG=15 

td(on)

td(off)

t [ns]

ID [A]

-50 -25 0 25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

RDS(on) [ ]

Tch [C]

typ.

max.

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=5A,VGS=10V

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MS5F6931

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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

-15V

BVDSS

IDP

VGS

VDS

+10V

L=3.05mH

Vcc=60V

Single Plse Test

50ΩD.U.T

Vcc

Fig.2 Operating waveforms of Avalanche Test

Fig.1 Avalanche Test circuit

0 25 50 75 100 125 150

100

200

300

400

500

600

IAS=4A

IAS=6A

IAS=10A

EAV [mJ]

starting Tch [C]

Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A

10-6 10-5 10-4 10-3 10-2 10-1 100

10-3

10-2

10-1

100

101

Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

Zth(ch-c) [C/W]

t [sec]

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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

Fig.5 Operating waveform of Gate charge Test

VDS

VGS

10V QG(VGS=10V)

QGS QGD

VGS

Fig.5 Operating waveform of Gate charge Test

VDS

VGS

10V QG(VGS=10V)

QGS QGD

VGS

VDS

VGS

10V QG(VGS=10V)

QGS QGD

VDS

VGS

10V QG(VGS=10V)

QGS QGD

VGS

Fig.3 Switching Test circuit

Vcc

RGOscillo-

scope R

Fig.3 Switching Test circuit

Vcc

RGOscillo-

scope R

Vcc

RGOscillo-

scope R

Fig.6 Operating waveform of Body diode Recovery Test

trr

IRP

IRP×10%

trr

Qrr=∫ir・dt

Fig.6 Operating waveform of Body diode Recovery Test

trr

IRP

IRP×10%

trr

Qrr=∫ir・dt

trr

IRP

IRP×10%

trr

Qrr=∫ir・dt

Fig.4 Operating waveform of Switching Test

VGS

VDS

VDS ×90%

td(on) tr td(off) tf

VGS ×10% VDS ×10%

VGS ×90%

VDS ×10%

VDS ×90%

Fig.4 Operating waveform of Switching Test

VGS

VDS

VDS ×90%

td(on) tr td(off) tf

VGS ×10% VDS ×10%

VGS ×90%

VDS ×10%

VDS ×90%

VGS

VDS

VDS ×90%

td(on) tr td(off) tf

VGS ×10% VDS ×10%

VGS ×90%

VDS ×10%

VDS ×90%

DWG.NO.

H04-004-03

MS5F6931

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This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

Trademark

Type name

Date code & Lot No.

Y: Last digit of year

M: Month code 1~9 and O,N,D

NNN: Lot. serial number

Under bar of date code

: means lead-free mark

YMNNN

* The font (font type,size) and the trademark-size

might be actually different.

Country of

origin mark.

" " (Blank): Japan

P : Philippines

Outview : TO-220F Package

Marking

10N60E

3.2

+0.2

-0.1

123

1.2±0.2

Pre-Solder

10± 0.5

2.7±0.2

4.5±0.2

6.3

2.7±0.2

0.6 +0.2

0.7±0.2

2.54±0.2 2.54±0.2

2.7±0.2

15±0.3

13min.

3.7±0.2



Connection

Gate

Drain

Source

DIMENSIONS ARE IN MILLIMETERS.

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This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

9. Cautions

･Although FujiElectric is continually improving product quality andreliability, asmallpercentage of semicon-

ductor products maybecomefaulty. WhenusingFuji Electric semiconductor products inyour equipment,

youare requestedto takeadequate safetymeasures to prevent theequipment fromcausing physicalinjury,

fire,or other problem incaseany of the products fail. Itisrecommendedto make your designfail-safe, flame

retardant, andfree of malfunction.

･Theproducts describedinthisSpecificationareintended foruse inthefollowing electronicandelectrical

equipment whichhas normalreliability requirements.

･Computers ･OA equipment ･Communications equipment(Terminal devices)

･Machinetools ･AV equipment ･Measurement equipment

･Personal equipment ･Industrialrobots ･Electrical home appliances etc.

･Theproducts describedinthis Specificationare not designedormanufactured to beused in equipment or

systemsused underlife-threateningsituations.If youare considering using theseproducts in the equipment

listed below, first checkthe system constructionandrequired reliability, and takeadequate safety measures

suchas a backupsystemto prevent the equipment from malfunctioning.

･Backbone networkequipment ･Transportation equipment(automobiles,trains, ships,etc.)

･Traffic-signal controlequipment ･Gas alarms, leakage gas auto breakers

･Submarine repeater equipment ･Burglar alarms, fire alarms, emergency equipment

･Medical equipment ･Nuclear controlequipment etc.

･Do not use the products in this Specificationforequipment requiring strict reliability suchas(but notlimitedto):

･Aerospace equipment ･Aeronauticalequipment

10. Warnings

･The MOSFETs should be usedinproducts withintheir absolutemaximum rating(voltage, current, tempera-

ture, etc.).

･The MOSFETs maybe destroyedif usedbeyond the rating.

･We only guarantee the non-repetitive andrepetitive Avalanchecapability and not for the continuous Ava-

lanche capability whichcanbe assumed as abnormalcondition.Please notethedevice may be destructed

fromthe Avalancheover the specified maximumrating.

･The equipment containingMOSFETsshould haveadequate fusesor circuit breakersto prevent the equip-

mentfromcausing secondary destruction.

･Usethe MOSFETs withintheirreliability and lifetimeunder certainenvironments or conditions. The

MOSFETsmayfailbefore the targetlifetime of yourproducts if used undercertainreliabilityconditions.

･Youmust carefulhandling of MOSFETsforESD damage is animportant consideration.

･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.

･It is recommended thatanyhandlingof MOSFETs isdonewhile used electrically conductivefloor and

tablemats that are grounded.

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This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

･BeforetouchingaMOSFETs terminal, dischargeanystaticelectricity fromyourbody andclothesbyground-

ing outthrough a high impedance resistor (about 1M)

･Whensoldering,inorder to protectthe MOSFETsfromstatic electricity, ground the solderingironor solder-

ingbath througha low impedance resistor.

･YoumustdesigntheMOSFETs to be operated withinthe specifiedmaximum ratings(voltage,current,

temperature, etc.) to prevent possible failureor destructionof devices.

･Considerthe possible temperaturerise not onlyforthechannel and case,but also for the outerleads.

･Do not directly touchtheleads or packageof the MOSFETswhilepower issupplied orduring operation,to

avoid electric shock and burns.

･The MOSFETs aremadeof incombustible material.However, if aMOSFET fails, it may emit smokeof

flame. Also,operating theMOSFETs near anyflammable place ormaterial may cause theMOSFETs to

emitsmoke or flame incase the MOSFETs becomeevenhotter duringoperation. Designthe arrangement

to preventthe spread of fire.

･TheMOSFETs should not used inanenvironment inthepresence of acid, organic matter,orcorrosive

gas(hydrogensulfide, sulfurous acid gas etc.)

･The MOSFETsshould not usedinanirradiatedfieldsince they arenot radiation-proof.

Installation

･Soldering involves temperatures whichexceed the devicestoragetemperature rating. To avoid device

damage and to ensure reliability, observe the followingguidelines from the quality assurance standard.

Soldertemperature andduration(through-hole package)

Solder temperature Duration

2605C 101seconds

35010C 3.50.5 seconds

･Theimmersiondepthof the lead should basically beupto the lead stopper and the distance shouldbea

maximumof 1.5mm fromthedevice.

･When flow-soldering, takecare to avoidimmersing the packageinthe solder bath.

･Refer to thefollowing torque reference Whenmountingthe device ona heat sink. Excesstorque applied to the

mounting screwcausesdamageto thedeviceandweak torque willincrease the thermal resistance, bothof

whichconditionsmay destroy the device.

Table1:Recommendedtightening torques.

Packagestyle Screw Tighteningtorques Note

TO-220

TO-220F M3 30–50 Ncm

TO-3P

TO-3PF

TO-247 M3 40–60 Ncm

TO-3PL M3 60 –80Ncm

flatness:<±30m

roughness:<10m

Planeofftheedges:

C<1.0mm

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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

･The heat sinkshould have a flatness within±30m and roughness within 10m. Also,keep the tightening

torque within thelimits of thisspecification.

･Improper handlingmaycause isolationbreakdownleadingto a critical accident.

ex.)Over plane off the edges of screwhole.(We recommendplane off the edge isC<1.0mm)

･We recommend theuse of thermalcompound to optimize the efficiencyof heat radiation.Itisimportant to

evenly apply the compoundand to eliminate any air voids.

Storage

･The MOSFETs must be storedatastandardtemperature of 5to 35Candrelativehumidity of 45to 75%.

･If the storageareais very dry, a humidifiermaybe required.Insuchacase, useonlydeionized waterorboiled

water, since thechlorineintap water may corrode the leads.

･TheMOSFETs should notbesubjected to rapid changes intemperature to avoidcondensation onthesurface

of theMOSFETs. ThereforestoretheMOSFETs inaplacewherethetemperature is steady.

･The MOSFETsshouldnot be storedontop of eachother,sincethis maycause excessiveexternalforceonthe

case.

･The MOSFETsshould be stored withthe lead terminals remaining unprocessed. Rustmay cause presoldered

connections to go failduring later processing.

･TheMOSFETs should bestoredinantistaticcontainers orshippingbags.

11. Compliancewithpertaining to restrictedsubstances

11-1)CompliancewiththeRoHSRegulationsandExemptions

ThisproductwillbefullycompliantwiththeRoHSdirective(Directive 2002/95/EC oftheeuropeanp

arliament

and thecouncil of27 January 2003).

FiveoutofsixsubstancesbelowwhichareregulatedbytheRoHS directiveinEuropearenotincludedin

thisproduct.Theexceptionisonlylead.

TheRoHSdirectivehassomeexemptions.Thefollowingrelatesto thisproduct:

Lead in highmelting temperaturetypesolders (Sn-Pbsolderalloywhichcontains morethan85%)

Thisproductis usedto thehighmeltingtemperaturetypesolders(Sn-Pb solders)fordie-bonding.

Moreover,the terminalsusedlead-freesolder.

*ThesixsubstancesregulatedbytheRoHSDirectiveare:

Lead,Mercury,Hexavalentchromium,Cadmium,PBB (polybrominatedbiphenyls),

PBDE(polybrominateddiphenylethers).

Themaximum concentration valueofthe sixsubstances inthis productconformsto theCommission

decision2005/618/ECofEUof 18August2005.

11-2)Compliancewith thecalss-1ODS andclass-2 ODS. (ODS:Ozone-Depleting Substances)

Thisproductsdoesnotcontain andusedthe “Law concerning the Protection of the Ozone Layer through

theControlofSpecifiedSubstances and OtherMeasures (JAPAN)”, and the Montreal Protocol.

DWG.NO.

H04-004-03

MS5F6931

15/15

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor

used for the manufacturing purposes without the express written consent

of Fuji Electric Device Technology Co.,Ltd.

Fuji Electric Device Technology Co., Ltd.

･If you haveany questionsaboutanypartofthisSpecification,please contactFuji

ElectricDeviceTechnologyoritssalesagentbeforeusingtheproduct.

･NeitherFuji norits agentsshall beheld liableforanyinjurycaused byusingtheproducts

notinaccordance withthe instructions.

･TheapplicationexamplesdescribedinthisspecificationaremerelytypicalusesofFuji

ElectricDeviceTechnologyproducts.

･This specification does notconfer any industrial property rights orotherrights,nor

constitutealicenseforsuchrights.