US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 1 of 12
REVISION 015 – JAN 17, 2018
3901004881
Features and Benefits
Operating voltage range from 2.2V to 18V
Very high magnetic sensitivity
CMOS technology
Chopper-stabilized amplifier stage Low current
consumption
Open drain output
Thin SOT23 3L and flat TO-92 3L both RoHS
Compliant packages
Applications
Automotive, Consumer and Industrial
Solid-state switch
Brushless DC motor commutation
Speed detection
Linear position detection
Angular position detection
Proximity detection
Ordering information
Part No
Temperature Code
Package Code
US4881ESE-AAA-000-RE
E (-40°C to 85°C)
SE (TSOT-3L)
US4881EUA-AAA-000-BU
E (-40°C to 85°C)
UA (TO-92)
US4881LSE-AAA-000-RE
L (-40°C to 150°C)
SE (TSOT-3L)
US4881LUA-AAA-000-BU
L (-40°C to 150°C)
UA (TO-92)
Functional Diagram 1.
General Description 2.
The Melexis US4881 is a bipolar Hall-effect switch
designed in mixed signal CMOS technology.
The device integrates a voltage regulator, Hall
sensor with dynamic offset cancellation system,
Schmitt trigger and an open-drain output driver, all
in a single package.
The low operating voltage and extended choice of
temperature ranges make it suitable for use in
automotive, industrial and consumer low voltage
applications.
The device is delivered in a Thin Small Outline
Transistor (TSOT) for surface mount process and in a
Plastic Single In-Line (TO-92 flat) for through-hole
mount.
Both 3-lead packages are RoHS compliant.
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 2 of 12
REVISION 015 – JAN 17, 2018
3901004881
Contents
1. Functional Diagram................................................................................................................................................................ 1
2. General Description ............................................................................................................................................................... 1
3. Glossary of Terms .................................................................................................................................................................. 3
4. Absolute Maximum Ratings ................................................................................................................................................... 3
5. Pin Definitions and Descriptions ............................................................................................................................................ 3
6. General Electrical Specifications ............................................................................................................................................ 4
7. Magnetic Specifications ......................................................................................................................................................... 4
8. Output Behaviour versus Magnetic Pole ................................................................................................................................ 4
9. Detailed General Description ................................................................................................................................................. 5
10. Unique Features .................................................................................................................................................................. 5
11. Performance Graphs ............................................................................................................................................................ 6
Magnetic parameters vs. TA .............................................................................................................................................. 6 11.1.
Magnetic parameters vs. VDD ............................................................................................................................................ 6 11.2.
VDSon vs. TA........................................................................................................................................................................... 6 11.3.
VDSon vs. VDD ........................................................................................................................................................................ 6 11.4.
IDD vs. TA .............................................................................................................................................................................. 6 11.5.
IDD vs. VDD ............................................................................................................................................................................ 6 11.6.
IOFF vs. TA ............................................................................................................................................................................. 7 11.7.
IOFF vs. VDD ........................................................................................................................................................................... 7 11.8.
12. Test conditions .................................................................................................................................................................... 7
Supply Current ................................................................................................................................................................... 7 12.1.
Output Saturation Voltage ................................................................................................................................................ 7
12.2.
Output Leakage Current .................................................................................................................................................... 7 12.3.
Magnetic Thresholds ......................................................................................................................................................... 7 12.4.
13. Application Information ....................................................................................................................................................... 8
Typical Three-Wire Application Circuit ............................................................................................................................. 8 13.1.
Two-Wire Circuit ................................................................................................................................................................ 8 13.2.
Automotive and Harsh, Noisy Environments Three-Wire Circuit .................................................................................... 8 13.3.
Application Comments....................................................................................................................................................... 8 13.4.
14. Standard information regarding manufacturability of Melexis products with different soldering processes ........................ 9
15. ESD Precautions ................................................................................................................................................................... 9
16. Package Information .......................................................................................................................................................... 10
SE Package (TSOT-3L) ....................................................................................................................................................... 10 16.1.
UA Package (TO-92 flat) ................................................................................................................................................... 11 16.2.
17. Contact .............................................................................................................................................................................. 12
18. Disclaimer .......................................................................................................................................................................... 12
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 3 of 12
REVISION 015 – JAN 17, 2018
3901004881
Glossary of Terms 3.
MilliTesla (mT), Gauss Units of magnetic flux density:
1mT = 10 Gauss
RoHS Restriction of Hazardous Substances
TSOT Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package
code “SE”
ESD Electro-Static Discharge
BLDC Brush-Less Direct-Current
Absolute Maximum Ratings 4.
Parameter
Symbol
Value
Units
Supply Voltage
VDD
20
V
Supply Current
IDD
50
mA
Output Voltage
VOUT
20
V
Output Current
IOUT
50
mA
Storage Temperature Range
TS
-50 to 150
°C
Maximum Junction Temperature
TJ
165
°C
ESD Sensitivity (AEC Q100 002)
-
2.5
kV
Table 1: Absolute maximum ratings
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum- rated
conditions for extended periods may affect device reliability.
Operating Temperature Range
Symbol
Value
Units
Temperature Suffix “E”
TA
-40 to 85
°C
Temperature Suffix “K”
TA
-40 to 125
°C
Temperature Suffix “L”
TA
-40 to 150
°C
Pin Definitions and Descriptions 5.
SE Pin No
UA Pin No
Name
Type
Function
1
1
VDD
Supply
Supply Voltage pin
2
3
OUT
Output
Open Drain Output
pin
3
2
GND
Ground
Ground pin
Table 2: Pin definitions and descriptions
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
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3901004881
General Electrical Specifications 6.
DC Operating Parameters TA = 25oC, VDD = 12V (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Supply Voltage
VDD
Operating
2.2
18
V
Supply Current
IDD
B < BRP
1.5
5
mA
Output Saturation Voltage
VDSon
IOUT = 20mA, B > BOP
0.5
V
Output Leakage Current
IOFF
B < BRP, VOUT = 24V
0.01
10
µA
Output Rise Time
tr
RL = 1kΩ, CL = 20pF
0.25
µs
Output Fall Time
tf
RL = 1kΩ, CL = 20pF
0.25
µs
Maximum Switching Frequency
FSW
10
kHz
SE Package Thermal Resistance
RTH
Single layer (1S) Jedec board
301
°C/W
UA Package Thermal Resistance
RTH
200
°C/W
Table 3: Electrical specifications
Magnetic Specifications 7.
DC Operating Parameters TA = 25oC, VDD = 12V (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Operating Point
BOP
-1
6
mT
Release Point
BRP
-6
1
mT
Hysteresis
BHYST
2
6
mT
Table 4: Magnetic specifications
Output Behaviour versus Magnetic Pole 8.
DC Operating Parameters TA = -40 ᵒC to 150 ᵒC, VDD = 2.2V to 18V (unless otherwise specified)
Parameter
Test Conditions (SE)
OUT (SE)
Test Conditions (UA)
OUT (UA)
South pole
B < BRP
High
B > BOP
Low
North pole
B > BOP
Low
B < BRP
High
Table 5: Output behaviour versus magnetic pole
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 5 of 12
REVISION 015 – JAN 17, 2018
3901004881
Detailed General Description 9.
Based on mixed signal CMOS technology, Melexis US4881 is a Hall-effect device with very high magnetic sensitivity. It
allows using generic magnets, weak magnets or larger air gap.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall
sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size
and lower current consumption when compared to the bipolar technology. The small chip size is also an important factor
to minimize the effect of physical stress.
This combination results in more stable magnetic characteristics and enables faster and more precise design.
The operating voltage from 2.2V to 18V, “L”, “K” and “E” operating temperature ranges and low current consumption make
this device especially suitable for automotive, industrial and consumer low voltage applications.
The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up
resistor tied between a pull-up voltage and the device output.
Unique Features 10.
The US4881 exhibits bipolar magnetic switching characteristics. Therefore, it operates with both south and north
poles.
Typically, the device behaves as a latch with symmetric operating
and release switching points (BOP=|BRP|). This means magnetic fields
with equivalent strength and opposite direction drive the output
high and low.
Removing the magnetic field (B→0) keeps the output in its previous
state. This latching property defines the device as a magnetic
memory.
Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (B OP and BRP
strictly positive) or unipolar negative switch with inversed output (BOP and BRP strictly negative). That is the output can
be set high and low by using only one magnetic pole. In such case, removin=g the magnetic field changes the output
level.
In latch, positive or negative switch behaviour, a magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal
value. This hysteresis prevents the output from oscillating near the switching point.
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 6 of 12
REVISION 015 – JAN 17, 2018
3901004881
Performance Graphs 11.
Magnetic parameters vs. TA 11.1.
Magnetic parameters vs. VDD
11.2.
VDSon vs. TA
11.3.
VDSon vs. VDD
11.4.
IDD vs. TA
11.5.
IDD vs. VDD
11.6.
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 7 of 12
REVISION 015 – JAN 17, 2018
3901004881
IOFF vs. TA 11.7.
IOFF vs. VDD
11.8.
Test conditions 12.
Note : DUT = Device Under Test
Supply Current 12.1.
Output Saturation Voltage12.2.
Output Leakage Current 12.3.
Magnetic Thresholds 12.4.
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 8 of 12
REVISION 015 – JAN 17, 2018
3901004881
Application Information13.
Typical Three-Wire Application Circuit 13.1. Two-Wire Circuit 13.2.
Automotive and Harsh, Noisy Environments 13.3.
Three-Wire Circuit
Application Comments 13.4.
For proper operation, a 100nF bypass capacitor should be placed as close as possible to the device between the VDD and
ground pin.
For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When
using a resistor, three points are important:
- the resistor has to limit the reverse current to 50mA maximum (VCC / R1 ≤ 50mA)
- the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD)
- the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC
2 / R1)
When using a diode, a reverse current cannot flow and the voltage drop is almost constant (≈0.7V).
Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both
solutions provide the required reverse voltage protection.
When a weak power supply is used or when the device is intended to be used in noisy environment, it is
recommended that figure 13.3 from the Application Information section is used.
The low-pass filter formed by R1 and C1 and the zener diode Z1 bypass the disturbances or voltage spikes occurring on
the device supply voltage VDD. The diode D1 provides additional reverse voltage protection.
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 9 of 12
REVISION 015 – JAN 17, 2018
3901004881
Standard information regarding manufacturability of Melexis products 14.
with different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level
according to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature,
temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with
Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive
strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on
qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous
Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx
ESD Precautions 15.
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 10 of 12
REVISION 015 – JAN 17, 2018
3901004881
Package Information 16.
SE Package (TSOT-3L) 16.1.
Notes:
1. Dimension “D” and “E1” do not include mold
flash or protrusions. Mold flash or protrusion
shall not exceed 0.15mm on “D” and
0.25mm on “E” per side.
2. Dimension “b” does not include dambar
protrusion.
3. All dimensions are in millimeters
Marking:
Top side : 4yww
4 = part number (US4881)
y = last digit of year
ww = calendar week
Hall plate location
Package line
TOP VIEW
0.275 TYP
END VIEW
1.417
0.891
This table in mm
N
A
A1
A2
D
E
E1
L
b
c
e
e1
3
min
–
0.025
0.85
2.80
2.60
1.50
0.30
0.30
0.10
0.95
BSC
1.90
BSC
0°
max
1.00
0.10
0.90
3.00
3.00
1.70
0.50
0.45
0.20
8°
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 11 of 12
REVISION 015 – JAN 17, 2018
3901004881
UA Package (TO-92 flat) 16.2.
Notes:
1. Mold flashes and protrusion are not included.
2. Gate burrs shall not exceed 0.127um on the top side.
This table in mm
A
D
E
F
J
L
L1
S
b1
b2
c
e
e1
min
2.80
3.90
1.40
0.00
2.51
14.0
1.55
0.63
0.35
0.43
0.35
2.51
1.24
max
3.20
4.30
1.60
0.20
2.72
15.0
1.75
0.84
0.44
0.52
0.44
2.57
1.30
min
5°
MAX
5°
REF
45°
REF
3°
REF
max
2.2
1.8
1.2
1.6
0.395
0.455
US4881
Bipolar Hall Switch
Low Voltage & Very High Sensitivity
Page 12 of 12
REVISION 015 – JAN 17, 2018
3901004881
Contact 17.
For the latest version of this document, go to our website at www.melexis.com.
For additional information, please contact our Direct Sales team and get help for your specific needs:
Europe, Africa
Telephone: +32 13 67 04 95
Email : sales_europe@melexis.com
Americas
Telephone: +1 603 223 2362
Email : sales_usa@melexis.com
Asia
Email : sales_asia@melexis.com
Disclaimer 18.
The information furnished by Melexis herein (“Information”) is believed to be correct and accurate. Melexis disclaims (i) any and all liability in connection with or arising out of the
furnishing, performance or use of the technical data or use of the product(s) as described herein (“Product”) (ii) any and all liability, including without limitation, special,
consequential or incidental damages, and (iii) any and all warranties, express, statutory, implied, or by description, includ ing warranties of fitness for particular purpose, non-
infringement and merchantability. No obligation or liability shall arise or flow out of Melexis’ rendering of technical or other services.
The Information is provided "as is” and Melexis reserves the right to change the Information at any time and without notice. Therefore, before placing orders and/or prior to
designing the Product into a system, users or any third party should obtain the latest version of the relevant information to verify that the information being relied upon is current.
Users or any third party must further determine the suitability of the Product for its application, including the level of reliability required and determine whether it is fit for a
particular purpose.
The Information is proprietary and/or confidential information of Melexis and the use thereof or anything described by the Information does not grant, explicitly or implicitly, to
any party any patent rights, licenses, or any other intellectual property rights.
This document as well as the Product(s) may be subject to export control regulations. Please be aware that export might require a prior authorization from competent authorities.
The Product(s) are intended for use in normal commercial applications. Unless otherwise agreed upon in writing, the Product(s ) are not designed, authorized or warranted to be
suitable in applications requiring extended temperature range and/or unusual environmental requirements. High reliability applications, such as medical life-support or life-
sustaining equipment are specifically not recommended by Melexis.
The Product(s) may not be used for the following applications subject to export control regulations: the development, production, processing, operation, maintenance, storage,
recognition or proliferation of 1) chemical, biological or nuclear weapons, or for the development, production, maintenance or storage of missiles for such weapons: 2) civil
firearms, including spare parts or ammunition for such arms; 3) defense related products, or other material for military use or for law enforcement; 4) any applications that, alone
or in combination with other goods, substances or organisms could cause serious harm to persons or goods and that can be used as a means of violence in an armed conflict or any
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The Products sold by Melexis are subject to the terms and conditions as specified in the Terms of Sale, which can be found at https://www.melexis.com/en/legal/terms-and-
conditions.
This document supersedes and replaces all prior information regarding the Product(s) and/or previous versions of this document.
Melexis NV © - No part of this document may be reproduced without the prior written consent of Melexis. (2016)
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