Lh. <> BF 422 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehempfangern Applications: Video B-class power stages in TV-receivers Besondere Merkmale: Features: @ Komplementar zu BF 423 @ Complementary to BF 423 Vorlaufige technische Daten - Preliminary specifications Abmessungen in mm Dimensions in mm Normgehdause - Case 10A3 DIN 41868 JEDEC TO 92Z Gewicht - Weight max. 0,29 Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung Ucso 250 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung UcEO 250 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung VEBO 5 v Emitter-base voltage Kollektorstrom Io 20 mA Collector current Kollektorspitzenstrom lom 100 mA Collector peak current Gesamtverlustleistung Total power dissipation Rina = 150C/wW, lamb S 25C Prot 830 mw Sperrschichttemperatur tj 150 C Junction temperature Lagerungstemperaturbereich Igtg ~65 ... +150 C Storage temperature range B 2/V.2.577/0476A1 261BF 422 Warmewiderstande Min. Typ. Max. Thermal resistances Sperrschicht-Umgebung Junction ambient 7=3mm Kupferkuhlflache 2 10x10 mm, 35 pm dick Rthga 150 C/W Copper cooling area = 10x10 mm, 35 ym thickness KenngrBen Characteristics lamb = 25C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current Ucp = 200 V Iopo 10 nA UcE = 200 V, Ape = 10kQ, fj = 150C ICER 10 pA Emitterreststrom Emitter cut-off current Veep =5V TEBO 10 pA Kollektor-Basis-Durchbruchspannung Gollector-base breakdown voltage Io =1pA UerycBo 250 V Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Io=1mA Upryceo 250 V Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio UcE = 20 V, Io =25mA hee 50 Transitfrequenz Gain bandwidth product Up = 10V, Ig = 10 mA fT 60 MHz Kollektor-Basis-Kapazitat Collector-base capacitance Ucs = 30 Vv, St = 0,5 MHz CcBo 1,6 pF Ruckwirkungszeitkonstante Feedback time constant Ucp = 20V, le = 30 mA, t = 10,7 MHz rob Coc 70 ps Kollektor-HF-Sattigungsspannung Collector saturation RF voltage Io = 25 mA, fj = 150C UcEsat 20 Vv 262