2SA965
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA965
Power Amplifier Applications
Driver-Stage Amplifier Applications
Complementary to 2SC2235.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 800 mA
Base current IB -80 mA
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC TO-92MOD
JEITA
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
2SA965
2009-12-21
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 120 V, IE = 0 100 nA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 V
Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 V
DC current gain hFE
(Note 2) VCE = 5 V, IC = 100 mA 80 240
Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA 1.0 V
Base-emitter voltage VBE V
CE = 5 V, IC = 500 mA 1.0 V
Transition frequency fT V
CE = 5 V, IC = 100 mA 120 MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz 40 pF
Note 2: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
A965
Lot No.
Note 3
Characteristics
indicator
Part No. (or abbreviation code)
2SA965
2009-12-21
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Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
20 0 40 60 100 120
1.0
0.4
0
0.2
0.6
0.8
80 140 180 160
Collector current IC (mA)
hFE – IC
DC current gain hFE
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (mA)
)
600
800
0
0
400
200
0.2 0.4 0.6 0.8 1.0 1.2
Ta = 100°C 25 25
Common emitter
VCE = 5 V
1000
0
0
800
600
400
200
2 4 6 8 10 12
Common emitter
Ta = 25°C
5
15 10
IB = 1 mA
7
3
4
2
14
0
300
Common emitter
IC/IB = 10
3
0.03
3
1
0.3
0.1
0.05
10 30 100 1000
Ta = 100°C
25
25
0.5
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (mA)
3000
1
0.5
3
1 3 10 30 100
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
300
1000
100
300
10
30
5
50
500
5 50
1000
10
3
500
300
100
50
10 30 100 300 1000
Ta = 100°C
25
25
30
Common emitter
VCE = 5 V
VCEO max
2SA965
2009-12-21
4
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