PHOTOCOUPLER PS2535-1,PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTAGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES -NEPOC Series- DESCRIPTION The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor, and darlington transistor output enables low-current input. The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for surface mount. FEATURES * High collector to emitter voltage (VCEO = 350 V) * High isolation voltage (BV = 5 000 Vr.m.s.) * High current transfer ratio (CTR = 1 500 % TYP.) * Ordering number of taping product: PS2535L-1-E3, E4, F3, F4 * Safety standards * UL approved: File No. E72422 * BSI approved: No. 8221/8222 * DIN EN60747-5-2 (VDE0884 Part2) approved (Option) APPLICATIONS * Telephone, Exchange equipment * FAX/MODEM Document No. PN10447EJ02V0DS (2nd edition) Date Published March 2006 CP(K) The mark shows major revised points. PS2535-1,PS2535L-1 PACKAGE DIMENSIONS (Unit : mm) DIP Type (New package) PS2535-1 3 0 to 15 +0.1 0.25 -0.05 1.250.15 0.500.10 0.25 M 2 0.1 +0.1 -0.05 0.90.25 9.600.4 2.54 0.15 Lead Bending Type 3 0 to 15 +0.1 0.25 -0.05 1.250.15 0.500.10 0.25 M 2.54 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 0.25 +0.1 -0.05 3.50.3 2 7.62 TOP VIEW 4.60.5 6.50.5 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 3.50.3 4 1 PS2535L-1 TOP VIEW 0.1 +0.1 -0.05 PS2535-1 4.60.5 3.30.5 4.150.4 1 0.25 M DIP Type 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1.250.15 2.54 2 4 0.25 +0.1 -0.05 2 7.62 TOP VIEW 4.60.35 6.50.5 6.50.5 1. Anode 2. Cathode 3. Emitter 4. Collector 3.50.3 3.20.4 4.150.4 4 1 PS2535L-1 TOP VIEW 3.50.3 4.60.35 Lead Bending Type (New package) 0.90.25 9.600.4 1.250.15 0.25 M 2.54 Data Sheet PN10447EJ02V0DS 0.15 PS2535-1,PS2535L-1 MARKING EXAMPLE No. 1 pin Mark 2535 NL601 N L Assembly Lot 6 01 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package Made in Japan Made in Taiwan Standard PKG L New PKG J N Data Sheet PN10447EJ02V0DS 3 PS2535-1,PS2535L-1 ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Safety Standard Specification PS2535-1 PS2535-1-A PS2535L-1 PS2535L-1-A PS2535L-1-E3 PS2535L-1-E3-A PS2535L-1-E4 PS2535L-1-E4-A PS2535L-1-F3 PS2535L-1-F3-A PS2535L-1-F4 PS2535L-1-F4-A PS2535-1-V PS2535-1-V-A PS2535L-1-V PS2535L-1-V-A PS2535L-1-V-E3 PS2535L-1-V-E3-A PS2535L-1-V-E4 PS2535L-1-V-E4-A PS2535L-1-V-F3 PS2535L-1-V-F3-A PS2535L-1-V-F4 PS2535L-1-V-F4-A Approval Pb-Free Magazine case 100 pcs Standard products (UL, BSI approved) Embossed Tape 1 000 pcs/reel Embossed Tape 2 000 pcs/reel Magazine case 100 pcs DIN EN60747-5-2 (VDE0884 Part2) Embossed Tape 1 000 pcs/reel Approved (Option) Embossed Tape 2 000 pcs/reel *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V PD/C 0.7 mW/C PD 70 mW IFP 0.5 A Collector to Emitter Voltage VCEO 350 V Emitter to Collector Voltage VECO 0.3 V IC 120 mA PC/C 2.0 mW/C PC 200 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA -55 to +100 C Storage Temperature Tstg -55 to +150 C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 s, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25C, RH = 60% between input and output Pins 1-2 shorted together, 3-4 shorted together. 4 Data Sheet PN10447EJ02V0DS Application Part *1 Number PS2535-1 PS2535-1,PS2535L-1 ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz MIN. TYP. MAX. Unit 1.2 1.4 V 5 A 15 pF Transistor Collector to Emitter Dark Current ICEO VCE = 350 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF VCC = 5 V, IC = 10 mA, RL = 100 18 s Rise Time Fall Time *2 tr *2 tf 400 10 1 500 400 nA 5 500 % 1.0 V 11 5 *1 CTR rank N : 400 to 5 500 (%) L : 1 500 to 5 500 (%) *2 Test circuit for switching time Pulse input VCC IF PW = 1 ms, Duty cycle = 1/10 In monitor VOUT 50 RL = 100 Data Sheet PN10447EJ02V0DS 5 PS2535-1,PS2535L-1 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 60 0.7 mW/C 40 20 0 25 100 75 50 240 220 200 180 160 140 120 100 80 60 40 20 2.0 mW/C 25 0 100 75 50 100 Ambient Temperature TA (C) Ambient Temperature TA (C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 TA = +100 C +60 C +25 C 50 Forward Current IF (mA) Transistor Power Dissipation PC (mW) 80 Collector Current IC (mA) Diode Power Dissipation PD (mW) 100 10 5 0 C -25 C -50 C 1 0.5 5 mA 3 mA 2 mA 50 1 mA 10 5 IF = 0.5 mA 0.1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1 0.4 1.5 0.8 1.0 1.2 1.4 1.6 Collector Saturation Voltage VCE(sat) (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 100 000 VCEO = 350 V 10 000 CTR = 1 068 % 2 290 % 4 360 % 1 000 100 10 1 -50 -25 3 mA 5 mA 0 25 50 75 2 mA 50 1 mA 10 100 5 IF = 0.5 mA 1 0 1 2 3 4 Collector to Emitter Voltage VCE (V) Ambient Temperature TA (C) Remark The graphs indicate nominal characteristics. 6 0.6 Forward Voltage VF (V) Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.7 Data Sheet PN10447EJ02V0DS 5 ; ; CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.4 4 500 Normalized to 1.0 at TA = 25 C, IF = 1 mA, VCE = 2 V 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 75 50 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERTURE PS2535-1,PS2535L-1 VCE = 2 V 4 000 3 500 3 000 2 500 2 000 1 500 1 000 500 0 0.1 100 0.5 10 40 LONG TERM CTR DEGRADATION 1 000 1.2 VCC = 10 V, IC = 10 mA, CTR = 1 800 % IF = 1 mA 100 tf td 10 ts 1 TA = 25 C 1.0 tr CTR (Relative Value) Switching Time t ( s) 5 Forword Current IF (mA) Ambient Temperature TA (C) SWITCHING TIME vs. LORD RESISTANCE 1 0.8 TA = 60 C 0.6 0.4 0.2 0.1 10 50 100 500 1000 0.0 10 Load Resistance RL () 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet PN10447EJ02V0DS 7 PS2535-1,PS2535L-1 TAPING SPECIFICATIONS (in millimeters) 1.550.1 4.5 MAX. 10.30.1 7.50.1 1.5 +0.1 -0 16.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 4.00.1 5.30.1 8.00.1 0.4 Tape Direction PS2535L-1-E3 PS2535L-1-E4 Outline and Dimensions (Reel) 2.00.5 21.00.8 80.01.0 R 1.0 2542.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 1 000 pcs/reel 8 Data Sheet PN10447EJ02V0DS 15.9 to 19.4 Outer edge of flange PS2535-1,PS2535L-1 1.550.1 4.5 MAX. 10.30.1 7.50.1 1.5 +0.1 -0 16.00.3 2.00.1 4.00.1 1.750.1 Outline and Dimensions (Tape) 4.00.1 5.30.1 8.00.1 0.4 Tape Direction PS2535L-1-F3 PS2535L-1-F4 Outline and Dimensions (Reel) 2.00.5 21.00.8 1001.0 R 1.0 3302.0 2.00.5 13.00.2 17.51.0 21.51.0 Packing: 2 000 pcs/reel Data Sheet PN10447EJ02V0DS 15.9 to 19.4 Outer edge of flange 9 PS2535-1,PS2535L-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature 260C or below (package surface temperature) * Time of peak reflow temperature 10 seconds or less * Time of temperature higher than 220C 60 seconds or less * Time to preheat temperature from 120 to 180C 12030 s * Number of reflows Three * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature 260C or below (molten solder temperature) * Time 10 seconds or less * Preheating conditions 120C or below (package surface temperature) * Number of times One (Allowed to be dipped in solder including plastic mold portion.) * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron * Peak temperature (lead part temperature) 350C or below * Time (each pins) 3 seconds or less * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100C. 10 Data Sheet PN10447EJ02V0DS PS2535-1,PS2535L-1 (4) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10447EJ02V0DS 11 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. 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