DESCRIPTION
The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington connected phototransistor.
A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor,
and darlington transistor output enables low-current input.
The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
• High collector to emitter voltage (VCEO = 350 V)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 1 500 % TYP.)
• Ordering number of taping product: PS2535L-1-E3, E4, F3, F4
• Safety standards
• UL approved: File No. E72422
• BSI approved: No. 8221/8222
• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
HIGH COLLECTOR TO EMITTER VOLTAGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SERIES −NEPOC Series−
The mark shows major revised points.
Document No. PN10447EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
PHOTOCOUPLER
PS2535-1,PS2535L-1
PACKAGE DIMENSIONS (Unit : mm)
DIP Type (New package) Lead Bending Type (New package)
PS2535-1TOP VIEW
3.5±0.3
4.15±0.4
3.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5±0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
PS2535L-1
TOP VIEW
0.25
M
4.6±0.35
6.5±0.5
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
DIP Type Lead Bending Type
PS2535-1TOP VIEW
4.6±0.5
6.5±0.5
3.5±0.3
4.15±0.4
3.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
PS2535L-1
TOP VIEW
4.6±0.5
6.5±0.5
0.25
M
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Data Sheet PN10447EJ02V0DS
2
PS2535-1,PS2535L-1
MARKING EXAMPLE
2535
NL601
J
N
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
N601
L
L
Data Sheet PN10447EJ02V0DS 3
PS2535-1,PS2535L-1
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application Part
Number*1
PS2535-1 PS2535-1-A Pb-Free Magazine case 100 pcs Standard products PS2535-1
PS2535L-1 PS2535L-1-A (UL, BSI approved)
PS2535L-1-E3 PS2535L-1-E3-A Embossed Tape 1 000 pcs/reel
PS2535L-1-E4 PS2535L-1-E4-A
PS2535L-1-F3 PS2535L-1-F3-A Embossed Tape 2 000 pcs/reel
PS2535L-1-F4 PS2535L-1-F4-A
PS2535-1-V PS2535-1-V-A Magazine case 100 pcs DIN EN60747-5-2
PS2535L-1-V PS2535L-1-V-A (VDE0884 Part2)
PS2535L-1-V-E3 PS2535L-1-V-E3-A Embossed Tape 1 000 pcs/reel Approved (Option)
PS2535L-1-V-E4 PS2535L-1-V-E4-A
PS2535L-1-V-F3 PS2535L-1-V-F3-A Embossed Tape 2 000 pcs/reel
PS2535L-1-V-F4 PS2535L-1-V-F4-A
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF 50 mA
Reverse Voltage VR 6 V
Power Dissipation Derating
∆
PD/°C 0.7 mW/°C
Power Dissipation PD 70 mW
Peak Forward Current *1 IFP 0.5 A
Transistor Collector to Emitter Voltage VCEO 350 V
Emitter to Collector Voltage VECO 0.3 V
Collector Current IC 120 mA
Power Dissipation Derating
∆
PC/°C 2.0 mW/°C
Power Dissipation PC 200 mW
Isolation Voltage *2 BV 5 000 Vr.m.s.
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10447EJ02V0DS
4
PS2535-1,PS2535L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 15 pF
Transistor Collector to Emitter
Dark Current ICEO VCE = 350 V, IF = 0 mA 400 nA
Coupled Current Transfer Ratio
(IC/IF) *1 CTR IF = 1 mA, VCE = 2 V 400 1 500 5 500 %
Collector Saturation
Voltage VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 1011
Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF
Rise Time *2 tr VCC = 5 V, IC = 10 mA, RL = 100 Ω 18
µ
s
Fall Time *2 tf 5
*1 CTR rank
N : 400 to 5 500 (%)
L : 1 500 to 5 500 (%)
*2 Test circuit for switching time
PW = 1 ms,
Duty cycle = 1/10
Pulse input V
CC
V
OUT
In monitor
R
L
= 100 Ω50 Ω
I
F
Data Sheet PN10447EJ02V0DS 5
PS2535-1,PS2535L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
–50 –25 025 50 75 100
10 000
100 000
1 000
100
10
1
25 50 75 100
100
80
60
40
20
0
0.7 mW/˚C
2.0 mW/˚C
25 50 75 100
120
140
160
180
200
220
240
100
80
60
40
20
0
100
50
10
5
1
0.5
0.1
0.7 0.9 1.1 1.3 1.50.8 1.0 1.2 1.4
0 ˚C
–25 ˚C
–50 ˚C
TA = +100 ˚C
+60 ˚C
+25 ˚C
0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
50
10
5
1
TRANSISTOR POWER DISSIPATION vs.
Transistor Power Dissipation PC (mW)
Diode Power Dissipation PD (mW)
Ambient Temperature TA (˚C)Ambient Temperature TA (˚C)
FORWARD CURRENT vs.
Forward Current IF (mA)
Forward Voltage VF (V)
COLLECTOR CURRENT vs.
Collector Current IC (mA)
Collector Saturation Voltage VCE(sat) (V)
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK
Collector to Emitter Dark Current ICEO (nA)
Ambient Temperature TA (˚C)
IF = 0.5 mA
1 mA
5 mA
2 mA
3 mA
CTR = 1 068 %
2 290 %
4 360 %
VCEO = 350 V
AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FORWARD VOLTAGE COLLECTOR SATURATION VOLTAGE
CURRENT vs. AMBIENT TEMPERATURE
12345
100
50
10
5
10
1 mA
5 mA 3 mA 2 mA
IF = 0.5 mA
Remark The graphs indicate nominal characteristics.
Data Sheet PN10447EJ02V0DS
6
PS2535-1,PS2535L-1
V
CC
= 10 V,
I
C
= 10 mA,
CTR = 1 800 %
1 000
100
10
1
0.110 50 100 500 1000
0.1 1
0.5 105 40
4 000
4 500
3 500
3 000
2 500
2 000
1 500
1 000
500
0
I
F
= 1 mA T
A
= 25 ˚C
T
A
= 60 ˚C
10 10
2
10
3
10
4
10
5
10
6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
t
r
t
f
t
d
t
s
RATIO vs. AMBIENT TEMPERTURE
NORMALIZED CURRENT TRANSFER
Ambient Temperature T
A
(˚C)
Normalized Current Transfer Ratio CTR
FORWARD CURRENT
CURRENT TRANSFER RATIO vs.
Forword Current I
F
(mA)
Current Transfer Ratio CTR (%)
LORD RESISTANCE
SWITCHING TIME vs.
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
LONG TERM CTR DEGRADATION
Time (Hr)
CTR (Relative Value)
V
CE
= 2 V
–50 –25 025 50 75 100
1.4
1.0
1.2
0.8
0.6
0.4
0.2
0.0
;;
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
Remark The graphs indicate nominal characteristics.
Data Sheet PN10447EJ02V0DS 7
PS2535-1,PS2535L-1
TAPING SPECIFICATIONS (in millimeters)
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
PS2535L-1-E3 PS2535L-1-E4
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Packing: 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
254±2.0
80.0±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10447EJ02V0DS
8
PS2535-1,PS2535L-1
Tape Direction
PS2535L-1-F3 PS2535L-1-F4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
Outline and Dimensions (Reel)
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
100±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10447EJ02V0DS 9
PS2535-1,PS2535L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• T ime of peak reflow temperature 10 seconds or less
• T ime of temperature higher than 220°C 60 seconds or less
• T ime to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10447EJ02V0DS
10
PS2535-1,PS2535L-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10447EJ02V0DS 11
PS2535-1,PS2535L-1
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS Concentration Limit per RoHS
(values are not yet fixed) Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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