PZT2222AT3 - ON Semiconductor

NPN Silicon Planar

Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear

and switching applications. The device is housed in the SOT-223

package which is designed for medium power surface mount

applications.

•PNP Complement is PZT2907AT1

•The SOT-223 package can be soldered using wave or reflow.

•SOT-223 package ensures level mounting, resulting in improved

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die.

•Available in 12 mm tape and reel

Use PZT2222AT1 to order the 7 inch/1000 unit reel.

Use PZT2222AT3 to order the 13 inch/4000 unit reel.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO 40 Vdc

Collector-Base Voltage VCBO 75 Vdc

Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc

Collector Current IC600 mAdc

Total Power Dissipation up to TA = 25°C(1) PD1.5 Watts

Storage Temperature Range°Tstg – 65 to +150 °C

Junction Temperature°TJ150 °C

THERMAL CHARACTERISTICS

Thermal Resistance from Junction to Ambient RθJA 83.3 °C/W

Lead Temperature for Soldering, 0.0625″ from case

Time in Solder Bath TL260

10 °C

Sec

DEVICE MARKING

P1F

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc

Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO °75° °—°Vdc

Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 6.0 — Vdc

Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) IBEX — 20 nAdc

Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) ICEX — 10 nAdc

Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO — 100 nAdc

1. Device m ounted on a n epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting p ad for the co llector lead m in. 0.93 inches2.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 3 1Publication Order Number:

PZT2222AT1/D

BASE

COLLECTOR

2, 4

EMITTER

PZT2222AT1

SOT-223 PACKAGE

NPN SILICON

TRANSISTOR

SURFACE MOUNT

ON Semiconductor Preferred Device

CASE 318E-04, STYLE 1

TO-261AA

123

PZT2222AT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS (continued)

Collector-Base Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0, TA = 125°C)

ICBO —

—10

10 nAdc

µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = – 55°C)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

hFE 35

100

—

300

—

Collector-Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat) —

—0.3

1.0

Vdc

Base-Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat) 0.6

—1.2

2.0

Vdc

Input Impedance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

°hie°2.0

0.25 8.0

1.25

kΩ

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hre —

—8.0x10-4

4.0x10-4

—

Small-Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hfe50

75 300

375

—

Output Admittance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

°hoe°5.0

25 35

200

µmhos

Noise Figure (VCE = 10 Vdc, IC = 100 µAdc, f = 1.0 kHz) F — 4.0 dB

DYNAMIC CHARACTERISTICS

Current-Gain — Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 — MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc— 8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce— 25 pF

SWITCHING TIMES (TA = 25°C)

Delay Time (VCC = 30 Vdc, IC = 150 mAdc,

IB( ) = 15 mAdc VEB( ff) = 0 5 Vdc)

td— 10 ns

Rise Time IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)

Figure 1 tr— 25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB( ) =I

B( ff) = 15 mAdc)

ts— 225 ns

Fall Time IB(on) = IB(off) = 15 mAdc)

Figure 2 tf— 60

PZT2222AT1

http://onsemi.com

90%

10%

VCC

ViD.U.T.

Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time

Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time

Vi = – 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 Ω, R2 = 200 Ω.

PULSE GENERATOR: OSCILLOSCOPE:

PULSE DURATION tp≤200 ns INPUT IMPEDANCE Zi> 100 kΩ

RISE TIME tr≤2 ns INPUT CAPACITANCE Ci< 12 pF

DUTY FACTOR δ= 0.02 RISE TIME tr< 5 ns

tf100 µs

-13.8 V

+16.2 V

TIME

VCC

OSCILLOSCOPE

D.U.T.

VBB

PZT2222AT1

http://onsemi.com

INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT-223

0.079

2.0

0.15

3.8

0.248

6.3

0.079

2.0

0.059

1.5

0.059

1.5

0.059

1.5

0.091

2.3

0.091

2.3

inches

SOT-223 POWER DISSIPATION

The power dissipation of the SOT-223 is a function of the

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power

dissipation. Power dissipation for a surface mount device is

determined by TJ(max), the maximum rated junction

temperature o f the die, RθJA, the thermal resistance from t h e

device junction to ambient, and the operating temperature,

TA. Using the values provided on the data sheet for the

SOT-223 package, PD can be calculated as follows:

PD = TJ(max) – TA

RθJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature TA of 25°C, one can

calculate the power dissipation of the device which in this

case is 1.5 watts.

PD = 150°C – 25°C= 1.5 watts

83.3°C/W

The 83.3°C/W for the SOT-223 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 1.5 watts.

There are other alternatives to achieving higher power

dissipation from the SOT-223 package. One is to increase

the area of the collector pad. By increasing the area of the

collector pad, the power dissipation can be increased.

Although the power dissipation can almost be doubled with

this method, area is taken up on the printed circuit board

which can defeat the purpose of using surface mount

technology. A graph of RθJA versus collector pad area is

shown in Figure 3.

0.8 Watts

1.25 Watts* 1.5 Watts

R , Thermal Resistance, Junction

to Ambient (C/W)

A, Area (square inches)

0.0 0.2 0.4 0.6 0.8 1.0

160

140

120

100

Figure 3. Thermal Resistance versus Collector

Pad Area for the SOT-223 Package (Typical)

Board Material = 0.0625″

G10/FR4, 2 oz Copper

TA = 25°C

*Mounted on the DPAK footprint

Another alternative would be to use a ceramic substrate or

an aluminum core board such as Thermal Clad. Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

PZT2222AT1

http://onsemi.com

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed

circuit board, solder paste must be applied to the pads. A

solder stencil is required to screen the optimum amount of

solder paste onto the footprint. The stencil is made of brass

or stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the SOT-223 package should be

the same as the pad size on the printed circuit board, i.e., a

1:1 registration.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within

a short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference should be a maximum of 10°C.

•The soldering temperature and time should not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient should be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied

during cooling

* Soldering a device without preheating can cause

excessive thermal shock and stress which can result in

damage to the device.

PZT2222AT1

http://onsemi.com

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of

control settings that will give the desired heat pattern. The

operator must set temperatures for several heating zones,

and a figure for belt speed. Taken together, these control

settings make up a heating “profile” for that particular

circuit board. On machines controlled by a computer, the

computer remembers these profiles from one operating

session to the next. Figure 4 shows a typical heating profile

for use when soldering a surface mount device to a printed

circuit board. This profile will vary among soldering

systems b u t i t i s a good starting point. Factors that can a ffect

the profile include the type of soldering system in use,

density and types of components on the board, type of solder

used, and the type of board or substrate material being used.

This profile shows temperature versus time. The line on the

graph shows the actual temperature that might be

experienced o n the surface of a test board at or near a central

solder joint. The two profiles are based on a high density an d

a low density board. The Vitronics SMD310

convection/infrared reflow soldering system was used to

generate this profile. The type of solder used was 62/36/2

Tin Lead Silver with a melting point between 177–189°C.

When this type of furnace is used for solder reflow work, the

circuit boards and solder joints tend to heat first. The

components o n the board are then heated by conduction. The

circuit board, because it has a lar ge surface area, absorbs the

thermal energy more efficiently, then distributes this energy

to the components. Because of this effect, the main body of

a component may be up to 30 degrees cooler than the

adjacent solder joints.

STEP 1

PREHEAT

ZONE 1

RAMP"

STEP 2

VENT

SOAK"

STEP 3

HEATING

ZONES 2 & 5

RAMP"

STEP 4

HEATING

ZONES 3 & 6

SOAK"

STEP 5

HEATING

ZONES 4 & 7

SPIKE"

STEP 6

VENT

STEP 7

COOLING

200°C

150°C

100°C

50°C

TIME (3 TO 7 MINUTES TOTAL) TMAX

SOLDER IS LIQUID FOR

40 TO 80 SECONDS

(DEPENDING ON

MASS OF ASSEMBLY)

205° TO

219°C

PEAK AT

SOLDER

JOINT

DESIRED CURVE FOR LOW

MASS ASSEMBLIES

DESIRED CURVE FOR HIGH

MASS ASSEMBLIES

100°C

150°C

160°C

170°C

140°C

Figure 4. Typical Solder Heating Profile

PZT2222AT1

http://onsemi.com

PACKAGE DIMENSIONS

CASE 318E–04

ISSUE K

SOT–223 (TO–261)

123

0.08 (0003)

DIM

MIN MAX MIN MAX

MILLIMETERS

0.249 0.263 6.30 6.70

INCHES

B0.130 0.145 3.30 3.70

C0.060 0.068 1.50 1.75

D0.024 0.035 0.60 0.89

F0.115 0.126 2.90 3.20

G0.087 0.094 2.20 2.40

H0.0008 0.0040 0.020 0.100

J0.009 0.014 0.24 0.35

K0.060 0.078 1.50 2.00

L0.033 0.041 0.85 1.05

M0 10 0 10

S0.264 0.287 6.70 7.30

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.



PZT2222AT1

http://onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

CENTRAL/SOUTH AMERICA:

Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–spanish@hibbertco.com

Toll–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support

Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong T ime)

Toll Free from Hong Kong & Singapore:

001–800–4422–3781

Email: ONlit–asia@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

PZT2222AT1/D

Thermal Clad is a trademark of the Bergquist Company

NORTH AMERICA Literature Fulfillment:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

EUROPE: LDC for ON Semiconductor – European Support

German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)

Email: ONlit–german@hibbertco.com

French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)

Email: ONlit–french@hibbertco.com

English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email: ONlit@hibbertco.com

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

*Available from Germany, France, Italy, UK, Ireland