SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: + Low Leakage Current Icry=100nA (Max.), Ippy=-100nA (Max. ) @ Vop=35V, Vpp=-0.4V + Excellent DC Current Gain Linearity Low Saturation Voltage > Voe(sat)=0-4V(Max.) @ Ic=150mA, Ip=15mA + Low Collector Output Capacitance : Cop=6. SpF (Max. ) @ Vopz5V * Complementary to YTS4403 MAXIMUM RATINGS (Ta=25C) YTS4401 Unit in mm oO a9 co ti Sa a D2 OQ a t a) 3] HT ot a 3 A m Z | 48 Nr eo 35 | 4 +1 +t 4 3 a [teat 4] co f 1. EMITTER 2. BASE 3. COLLECTOR JEDEC - EIAJ sc-se9 TOSHIBA 2-S3FIA Weight: 0.012 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Vcso 60 v Collector-Emitter Voltage Vero 40 Vv Emitter-Base Voltage VEBO 6 v Collector Current _ Ie 600 mA | Base Current Ip 100 mA | Collector Power Dissipation Pe 200 mW (Ta=25C) Derate Linearly 25C 1.6 mW/C Termsl Relate renner Junction Temperature Tj 150 C Storage Temperature Range Tstg -55~% 150 C Marking q Type NameYTS4401 ELECTRICAL CHARACTERISTICS (Ta=25c) 16VF] | pases aa! L CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current ICEV VcE=35V, VBE=-0.4V - - 100 nA Base Cut-off Current IBEV VcE=35V, Vpe=-0.4V - - ~100 nA Collector-Base _ . Breakdown Voltage V(BR)CBO Tc=0.1mA, TE=0 60 ~ ~ V Collector-Emitter Breakdown Voltage V(BR)CEO Tc=1lmA, Ip=0 40 ~ ~ V Emitter~Base _ _ Breakdown Voltage V(BR)EBO | Tg=0.1mA, Ic=0 6 ~ ~ V hFE (1) VcE=1V, Ic=0.1mA 20 - - hre(2) | Vcg=1V, Ic=lmA 40 - = DC Current Gain hE (3) VcE=1V, Ic=10mA 80 - - HEE (4) VcE=1V, Ic=150mA 100 - 300 hFE (5) VcE=2V, Ic=500mA 40 - - Collector-Emitter VcE(sat)1] Ic=150mA, Ip=15mA - - 0.4 V Saturation Voltage VCE(sat)2] Ic=500mA, Ip=50mA - - 0.75 Base-Emitter VBE(sat)1] Ic=150mA, Ip=15mA 0.75] - 0.95 Vv Saturation Voltage VBE(sat)2| Ic=500mA, 1p=50mA - - 1.2 VcE=10V, Ic=20mA Transition Frequency fT 5 LOOMH: c 250 - - MHz Collector Output Capacitance Cob VcB=5V, If=0, f=1MHz - - 6.5 pF Input Capacitance Cib VeB=0.5V, Ic=0, f=1MHz - - 30 pF Input Impedance hie 1.0 - 15 kQ Voltage Feedback Ratio hre VcE=10V, Ic=lmA 0.1 - 8 |x10-4 Small-Signal Current Gain hfe f=1kHz 40 - 500 Collector Output Admittance hoe 1.0 - 30 us 1kQO Vout . Vi ! - - Delay Time tq in 3 2Ctotal<10pF 15 x rt r (scope) <4n8 Veco=30V 2048 Rise Time tr rev Fo ty<ans - - 20 -ev Jp Dus<ee Switching Time ns 1kQ + Vout : Vin Sli Storage Time tstg 8 FCtotal<10pF - - 225 7 ty (acope)<4n8 YBB-"4 yoo esov 2048 tc 20ns f Fall Time te rH - - 30 1112