MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. Features * High DC Current Gain - hFE = 2000 (Typ) @ IC * * * = 2.0 Adc Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage - Multiplication Choice of Packages - MJE700 and MJE800 Series Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 VCEO Collector-Base Voltage MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 VCB Emitter-Base Voltage VEB 5.0 Vdc IC 4.0 Adc Base Current IB 0.1 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W mW/_C TJ, Tstg -55 to +150 _C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 6.25 _C/W Collector Current Operating and Storage Junction Temperature Range Value Unit PNP COLLECTOR 2 BASE 3 BASE 3 EMITTER 1 MJE800 MJE802 MJE803 Vdc 60 80 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. May, 2011 - Rev. 11 NPN COLLECTOR 2 Vdc 60 80 THERMAL CHARACTERISTICS (c) Semiconductor Components Industries, LLC, 2011 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 1 3 EMITTER 1 MJE700 MJE702 MJE703 TO-225 CASE 77 STYLE 1 2 1 MARKING DIAGRAM YWW JEx0yG Y = Year WW = Work Week JEx0y = Device Code x = 7 or 8 y = 0, 2, or 3 G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: MJE700/D MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 1) MJE700, MJE800 (IC = 50 mAdc, IB = 0) MJE702, MJE703, MJE802, MJE803 V(BR)CEO 60 80 - - Vdc - - 100 100 - - 100 500 - 2.0 750 750 100 - - - - - - 2.5 2.8 3.0 - - - 2.5 2.5 3.0 1.0 - OFF CHARACTERISTICS Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) ICEO MJE700, MJE800 MJE702, MJE703, MJE802, MJE803 Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100_C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices Collector-Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 (IC = 2.0 Adc, IB = 40 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) All devices VCE(sat) Base-Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) VBE(on) MJE700, MJE702, MJE800, MJE802 MJE703, MJE803 All devices - Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. PD, POWER DISSIPATION (WATTS) 50 40 TO-220AB 30 TO-126 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 125 150 - MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) 4.0 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA RC VCC = 30 V IC/IB = 250 ts IB1 = IB2 TJ = 25C 2.0 SCOPE t, TIME (s) TUT V2 APPROX +8.0 V RB 51 0 V1 APPROX -12 V 6.0 k D1 150 For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf 10 ns DUTY CYCLE = 1.0% tr 0.6 0.4 + 4.0 V 25 ms tf 1.0 0.8 td @ VBE(off) = 0 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 PNP NPN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 3. Switching Times P(pk) qJC(t) = r(t) qJC qJC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.05 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response (MJE700, 800 Series) 5.0ms 3.0 2.0 100ms dc TJ = 150C 1.0 0.7 0.5 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0.2 0.1 5.0 1.0ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE-OPERATING AREA 10 7.0 5.0 MJE702, 703 MJE700 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 7.0 5.0 3.0 2.0 100ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0.2 Figure 5. MJE700 Series 1.0ms dc 1.0 0.7 0.5 0.1 5.0 100 5.0ms MJE802, 803 MJE800 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 6. MJE800 Series There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 are based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 3 MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) PNP MJE700 Series NPN MJE800 Series 6.0 k 6.0 k TJ = 125C 4.0 k 3.0 k 25C 2.0 k -55C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.4 0.6 1.0 0.2 IC, COLLECTOR CURRENT (AMP) 2.0 VCE = 3.0 V TJ = 125C 4.0 k hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 3.0 V 3.0 k 25C 2.0 k -55C 1.0 k 800 600 400 300 0.04 0.06 4.0 0.1 0.4 0.6 1.0 0.2 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 3.4 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain TJ = 25C 3.0 2.6 IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 3.4 3.0 TJ = 25C IC = 0.5 A 1.0 A 2.0 A 4.0 A 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 IB, BASE CURRENT (mA) 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25C TJ = 25C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 2.0 0.2 0.04 0.06 4.0 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages http://onsemi.com 4 2.0 4.0 MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) ORDERING INFORMATION Device MJE700 MJE700G MJE702 MJE702G MJE703 MJE703G MJE800 MJE800G MJE802 MJE802G MJE803 MJE803G Package Shipping TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) http://onsemi.com 5 50 Units / Bulk MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M -A- 1 2 3 H K J V G R S 0.25 (0.010) M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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