MJD32CUQ-13 - DIODES INC - Datasheet.Live

MJD32CUQ

Document number: DS39134 Rev. 2 - 2

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MJD32CUQ

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 (DPAK)

Description

This Bipolar Junction Transistor (BJT) is designed to meet the

stringent requirements of Automotive Applications.

Features

 BVCEO > -100V

 IC = -3A High Continuous Collector Current

 ICM = -5A Peak Pulse Current

 Ideal for Power Switching or Amplification Applications

 Complementary NPN Type: MJD31CUQ

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: TO252 (DPAK)

 Case Material: Molded Plastic, "Green" Molding Compound

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.34 grams (Approximate)

Ordering Information (Notes 4 & 5)

Part number

Compliance

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

MJD32CUQ-13

Automotive

MJD32CU

13

16

2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and

Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total

Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Device Schematic

Pin Out Configuration

Top View

MJD32CU = Product Type Marking Code

= Manufacturers’ Code Marking

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 17 = 2017)

WW = Week Code (01 to 53)

C

E

B

TO252 (DPAK)

MJD32CU

MJD32CUQ

Document number: DS39134 Rev. 2 - 2

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MJD32CUQ

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-120

V

Collector-Emitter Voltage

VCEO

-100

V

Emitter-Base Voltage

VEBO

-7

V

Continuous Collector Current

IC

-3

A

Peak Pulse Collector Current

ICM

-5

A

Continuous Base Current

IB

-1

A

Power Dissipation

PD

15

W

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

PD

3.9

W

(Note 7)

2.1

(Note 8)

1.6

Thermal Resistance, Junction to Ambient Air

(Note 6)

RθJA

32

°C/W

(Note 7)

59

(Note 8)

80

Thermal Resistance, Junction to Leads

(Note 9)

RθJL

3.6

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 10)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured

under still air conditions whilst operating in a steady-state.

7. Same as note (6), except mounted on 25mm x 25mm 1oz copper.

8. Same as note (6), except mounted on minimum recommended pad (MRP) layout.

9. Thermal resistance from junction to solder-point (on the exposed collector pad).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MJD32CUQ

Document number: DS39134 Rev. 2 - 2

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MJD32CUQ

Thermal Characteristics

100m 110 100

10m

100m

1

10

Single Pulse

Tamb=25oC

VCE(sat)

Limited

100s

1ms

10ms

100ms

1s

DC

Safe Operating Area

-IC Collector Current (A)

-VCE Collector-Emitter Voltage (V) 0.1 1 10 100

0.01

0.1

1

10

Single Pulse

TCASE=25oC

1ms

10ms

100ms

VCE(sat)

Limited

100s

DC

Safe Operating Area

-VCE Collector-Emitter Voltage (V)

-IC Collector Current (A)

100μ 1m 10m 100m 110 100 1k

0

20

40

60

80 TAMB=25oC

Minimum Copper

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (oC/W)

Pulse Width (s) 100μ 1m 10m 100m 110 100 1k

0

2

4

6

8

D=0.5

D=0.2

D=0.1

D=0.05

Single Pulse TCASE=25oC

Transient Thermal Impedance

Pulse Width (s)

Thermal Resistance (oC/W)

µ

MJD32CUQ

Document number: DS39134 Rev. 2 - 2

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MJD32CUQ

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-120



V

IC = -20μA

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

-100



V

IC = -30mA

Emitter-Base Breakdown Voltage

BVEBO

-7



V

IE = -100μA

Collector-Base Cut-off Current

ICBO



-1

μA

VCB = -100V

Collector Cut-off Current

ICEO



-1

μA

VCE = -60V

Collector Cut-off Current

ICES



-1

μA

VCE = -100V

Emitter Cut-off Current

IEBO



-1

μA

VEB = -5V

Collector-Emitter Saturation Voltage

(Note 11)

VCE(sat)



-300

mV

IC = -1A, IB = -100mA



-500

mV

IC = -2A, IB = -200mA



-700

mV

IC = -3A, IB = -375mA

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)



-1.2

V

IC = -2A, IB = -200mA

Base-Emitter Turn-On Voltage (Note 11)

VBE(on)



-950

mV

IC = -1A, VCE = -2V



-1.4

V

IC = -3A, VCE = -4V

DC Current Gain (Note 11)

hFE

25

10



50



VCE = -4V, IC = -1A

VCE = -4V, IC = -3A

Current Signal Current Gain

Hfe

20



VCE = -10V, IC = -0.5A, f = 1kHz

Current Gain-Bandwidth Product

fT

3.0



MHz

IC = -0.5A, VCE = -10V, f = 1MHz

Note: 11. Measured under pulsed conditions. Pulse width  300μs. Duty cycle 2%.

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Document number: DS39134 Rev. 2 - 2

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MJD32CUQ

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1

10

100

1,000

10,000

-I , COLLECTOR CURRENT (mA)

C

Typical Base-Emitter Saturation Voltage

vs. Collector Current

0.2

0.4

0.6

0.8

1.0

1.2

-

V

,

B

A

S

E

-

E

M

I

T

E

R

S

A

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E

(

V

)

B

E

(

S

A

T

)

0

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 8

C B

/ I

1

10

100

1,000

10,000

-I , COLLECTOR CURRENT (mA)

C

Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.4

-

V

,

B

A

S

E

-

E

M

I

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E

(

V

)

B

E

(

O

N

)

1.2

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -4V

CE

1

10

100

1,000

10,000

-I , COLLECTOR CURRENT (mA)

C

Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.001

0.01

0.1

1

-

V

,

C

O

L

E

C

T

O

R

-

E

M

I

T

E

R

S

A

T

U

R

A

T

I

O

N

C

E

(

S

A

T

)

V

O

L

T

A

G

E

(

V

)

I / I = 8

C B

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

1

10

100

1,000

10,000

-I , COLLECTOR CURRENT (mA)

C

Typical DC Current Gain vs. Collector Current

10

100

1,000

h

,

D

C

U

R

E

N

T

G

A

I

N

F

E

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = -4V

CE

10

100

1,000

0.1 1 10 100

V , REVERSE VOLTAGE (V)

R

Figure 5 Typical Capacitance Characteristics

CAPACITANCE (pF)

Cibo

Cobo

f = 1MHz

hFE, DC CURRENT GAIN

-VCE(SAT), COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)

-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)

Typical Capacitance Characteristics

MJD32CUQ

Document number: DS39134 Rev. 2 - 2

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MJD32CUQ

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO252 (DPAK)

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

TO252 (DPAK)

Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between

device Terminals and PCB tracking.

TO252 (DPAK)

Dim

Min

Max

Typ

A

2.19

2.39

2.29

A1

0.00

0.13

0.08

A2

0.97

1.17

1.07

b

0.64

0.88

0.783

b2

0.76

1.14

0.95

b3

5.21

5.46

5.33

c

0.45

0.58

0.531

D

6.00

6.20

6.10

D1

5.21

-

e

-

2.286

E

6.45

6.70

6.58

E1

4.32

-

H

9.40

10.41

9.91

L

1.40

1.78

1.59

L3

0.88

1.27

1.08

L4

0.64

1.02

0.83

a

0°

10°

-

All Dimensions in mm

Dimensions

Value (in mm)

C

4.572

X

1.060

X1

5.632

Y

2.600

Y1

5.700

Y2

10.700

b3

E

L3

D

L4

b2(2x)

b(3x)

e

c

A

7°±1°

H

Seating Plane

A1

Gauge Plane

a

0.508

L

2.74REF

D1

A2

E1

X1

X

Y2

Y1

Y

C

MJD32CUQ

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MJD32CUQ

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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