CM1400DU-24NF Mega Power Dual IGBTMODTM Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1400 Amperes/1200 Volts TC MEASURED POINTS (THE SIDE OF Cu BASEPLATE) A D G P (8 PLACES) U L H H K W C2E1 C2 C1 G2 E1 E2 G1 X J F S Y CB Z T C1 U V Description: Powerex IGBTMODTM Modules are designed for use in switching two IGBT applications. Each module consists of a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. F J E2 E H H H H H H G G AA R (9 PLACES) M L LABEL G2 E2 C2 C2E1 C1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 5.91 Millimeters Dimensions 150.0 L Inches Millimeters 1.36 +0.04/-0.02 34.6 +1.0/-0.5 B 5.10 129.5 M 0.0750.08 1.90.2 C 1.670.01 42.50.25 P 0.26 6.5 D 5.410.01 137.50.25 R M6 Metric M6 E 6.54 166.0 U 0.62 15.7 F 2.910.01 74.00.25 V 0.71 18.0 G 1.65 42.0 W 0.75 19.0 H 0.55 14.0 X 0.43 11.0 J 1.500.01 38.00.25 Y 0.83 21.0 K 0.16 4.0 Z 0.41 10.5 AA 0.22 5.5 Housing Type (J.S.T. MFG. CO. LTD) S = VHR-2N T = VHR-5N 4/12 Rev. 3 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: High Power UPS Large Motor Drives Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1400DU-24NF is a 1200V (VCES), 1400 Ampere Dual IGBTMOD Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1400 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DU-24NF Mega Power Dual IGBTMODTM 1400 Amperes/1200 Volts Maximum Ratings, Tj = 25C unless otherwise specified Ratings Symbol Ratings Units Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts Collector Current DC (TC' = 94C)*5 IC 1400 Amperes Peak Collector Current (Pulse)*2 ICM 2800 Amperes Emitter Current (TC = 25C) IE*1 1400 Amperes Peak Emitter Current (Pulse)*2 IEM*1 2800 Amperes Maximum Collector Dissipation (TC = 25C) PC*3 3900 Watts Tj -40 to 150 C Junction Temperature Storage Temperature*4 Tstg -40 to 125 C Viso 2500 Volts Mounting Torque, M6 Mounting Screws - 40 in-lb Mounting Torque, M6 Main Terminal Screw - 40 in-lb Weight (Typical) - 1400 Grams Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 min.) Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Collector-Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Min. Typ. Max. VCE = VCES, VGE = 0V - - 1 mA VGE(th) IC = 140mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V - - 1.5 A ICES VCE(sat) Test Conditions IC = 1400A, VGE = 15V, Tj = - 1.8 2.5 Volts - 2.0 - Volts (Chip) IC = 1400A, VGE = 15V, Tj = 125C*4 Module Lead Resistance R(lead) IC = 1400A, Terminal-Chip Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG Turn-on Delay Time td(on) Units 25C*4 (Without Lead Resistance) VCE = 10V, VGE = 0V VCC = 600V, IC = 1400A, VGE = 15V - 0.286 - - - m 220 nF - - - 25 nF - 4.7 nF - 7200 - - - nC 800 ns Turn-on Rise Time tr VCC = 600V, IC = 1400A, - - 300 ns Turn-off Delay Time td(off) VGE = 15V, - - 1000 ns Turn-off Fall Time tf RG = 0.22, Inductive Load, - - 300 ns Reverse Recovery Time trr*1 IE = 1400A - - 700 ns Reverse Recovery Charge Qrr*1 - 90 - C Emitter-Collector Voltage VEC*1 IE = 1400A, VGE = 0V - - 3.2 Volts (Without Lead Resistance) (Chip) *1 *2 *3 *4 *5 *8 2 Symbol Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. The operation temperature is restrained by the permission temperature of female connector. 4/12 Rev.3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DU-24NF Mega Power Dual IGBTMODTM 1400 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Case*7 Thermal Resistance, Junction to Case*7 Thermal Resistance, Junction to Contact Thermal Resistance*6 Test Conditions Min. Typ. Max. Rth(j-c)Q IGBT Part (1/2 Module) - - 0.032 K/W Rth(j-c)D FWDi Part (1/2 Module) - - 0.053 K/W Case to Heatsink, - 0.016 - K/W - - 0.014 K/W - - 0.023 K/W 0.22 - 2.2 Rth(c-f) Units Thermal Grease Applied (1/2 Module) Thermal Resistance, Junction to Case*5 Rth(j-c')Q Per IGBT Part, TC Reference Point Under the Chips Thermal Resistance, Junction to Case*5 Rth(j-c')D Per FWDi Part, TC Reference Point Under the Chips External Gate Resistance RG *5 Case temperature (TC') measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of = 0.9 [W/(m * K)]. *7 Case temperature (TC) measured point is shown in the device dtawing. OUTPUT CHARACTERISTICS (TYPICAL) 2400 13 12 2000 2000 1600 1600 11 1200 1200 800 10 400 0 9 8 0 1 2 3 4 5 6 7 8 800 400 0 9 10 0 4 8 12 16 4 3 2 1 0 20 VGE = 15V Tj = 25C Tj = 125C 400 600 1200 1600 2000 2400 2800 0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 10 103 8 6 IC = 1400A 4 IC = 560A IC = 2800A 2 0 0 4 8 12 16 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4/12 Rev. 3 20 103 Tj = 25C Tj = 125C 102 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2400 2800 Tj = 25C VGE = 20V 15 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 2800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) VGE = 0V Cies 102 Coes 101 Cres 100 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1400DU-24NF Mega Power Dual IGBTMODTM 1400 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) 101 102 tf VCC = 600V VGE = 15V RG = 0.22 Tj = 125C Inductive Load 103 Irr trr 102 102 101 102 104 10-3 10-2 10-1 100 101 Per Unit Base Rth(j-c') = 0.014 K/W (IGBT) Rth(j-c') = 0.023 K/W (FWDi) 100 10-1 10-2 Single Pulse TC = 25C 10-3 10-5 10-4 10-3 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 100 102 103 104 SWITCHING ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) REVERSE RECOVERY ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) VCC = 600V VGE = 15V Tj = 125C IC = 1400A ESW(on) ESW(off) Inductive Load 0.5 1.0 1.5 2.0 EXTERNAL GATE RESISTANCE, RG, () 4 VCC = 600V VGE = 15V Tj = 125C RG = 0.22 ESW(on) ESW(off) Inductive Load 101 COLLECTOR CURRENT, IC, (AMPERES) 102 0 102 TIME, (s) 103 101 16 VCC = 400V VCC = 600V 12 8 4 0 2000 0 2.5 4000 6000 8000 10000 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 104 103 IC = 1400A EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) VCC = 600V VGE = 15V RG = 0.22 Tj = 125C Inductive Load 20 REVERSE RECOVERY ENERGY VS. EMITTER CURRENT (TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE) tr 102 GATE CHARGE, VGE 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(off) 103 REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 104 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 102 VCC = 600V VGE = 15V Tj = 125C RG = 0.22 Inductive Load 101 100 102 103 104 EMITTER CURRENT, IE, (AMPERES) 103 102 101 VCC = 600V VGE = 15V Tj = 125C IC = 1400A Inductive Load 0 0.5 1.0 1.5 2.0 2.5 EXTERNAL GATE RESISTANCE, RG, () 4/12 Rev.3