2N3954 2N3954A 2N3955 2N3955A matched dual Eo, n-channel JFETs == evscuins,coves designed for eee BENEFITS High Accuracy & Stability Offset Less Than 5 mV (2N3954, 54A) @ Low and Medium Frequency Drift Less Than 5 uV/C (2N3954A) ' : if: @ Wide Dynamic Range Differential Amplifiers Ic Seocttiod @ Ving = 20V BR i @ Low Capacitance High Input a, Capecita Impedance Amplifiers *ABSOLUTE MAXIMUM RATINGS (25C) Any Case-To-Lead Voltage....... cence eeeee ... 100 V Gate-Drain or Gate-Source Voltage ...... cece eens -50V a Gate-To-Gate Voltage ..........c0ccuee seeeaes L100V Gate Current ..... sence een aetna eeeees . 50mA Total Device Dissipation 85C (Each Side)....... . 250 mW Case Temperature (Both Sides)....... 500 mW Power Derating (Each Side) ...... weeeecees 286 mMW/PC (Both Sides) ............- .. 4.3 mw/C Storage Temperature Range ........ wees. 65 to +125C Lead Temperature (1/16 from case for 10 seconds)... . 300C {ALTERNATE) *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) iconix 2N3954 2N3964A 2N3965 2N3955A . Characteristic Unit Test Conditions Min | Max Min | Max Min | Max Min | Max 1 -100 -100 ~100 ~100 | pA_| Vgg=-30V, =a] ['sss Gate Reverse Current ~800 =600 500 =500 | _nA_| Vps=0 TA = 125C Gate-Source Breakdown 7 _ Vos=0, 3 BVgss Voltage -50 50 ~50 50 las 1A s Gate-Source Cutoff _ _ . _ Vps = 20V, 4] | Vasiort) Voltage 10] -45 | -10] -45] -1.0] -45 | -1.0] -45 y [toate TTA Gate-Source Forward Vos =0, 5/7] Yesin Voltage 2.0 2.0 2.0 2.0 lage mA 6} 1 -4.2 4.2 ~4.2 4.2 _ Ip = 50 KA 77] | Yes Gate-Source Voltage OB 40 | OST -40] 0s] 40 | ~Os] 40 Vos*20V 0 p= 200nk 8 : x) 50 =50 ~50 | pA | Vps=20V, a Is Gate Operating Current =250 =) 360 360 [nA |Ip=200HA | TA= 128C Saturation Orain Vps=20v,_ 10] | Ipss Current 05] 50] 05] 50] 05} 50] 08) 50] ma] yDS7o 7 C Source Forward | 1000 | 3000_| 1000 | 3000 | 1000] 3000_| 1000 | 3000. T= TkHz az] [% Transcond 1000 1000 1000 1000 sumo {= 300 MHz Do Common-Source Output Vos = 20V, = 3) v Sos Conductenne 35 35 35 35 wos 2? f= 1kHz 14] al Ciss Gommon: Source Input 4.0 40 40 40 nana BPACHANCE m Common-Source Reverse 15 1 Crss Transfer Capecitancs 1.2 1.2 1.2 1.2 | pF f= 1 Mie 16] | Cdgo Drain-Gate Capacitance 15 15 15 15 1s TOV, Vos=20V, 17| | Ne Nene Prgeource Spot 05 0.5 05 05} dB | vgs=0, f= 100 Hz loise Figure Rg = 10 MQ a Differential Gate Vos =20V, = 18 - llg7-lgal Current 10 10 10 10] nA Ip = 200 nA, T=128C Saturation Drain Current! _ | Vps=20V 19] a Ipssi/'Dss2__Revio (Nets 11 | 095] 1.0] o98] 10] 095] 1.0] 0.95] 1.0 veg=0 20] C| iVgg1-Vesz! vareentia Gate-Source 5.0 5.0 10.0 5.0 Hu po - = " Vo 2\t Gate-Source Differential . a8 04 2.0 12), Vps = 20 V. T= 25C to -55C 4) | 4'Vas1-Vesa! i S ' 22) N GS1-NGS2!_ Voltage Change with 10 05 25 16 Ip=200nA | T=26'Cto 126C ed BR: EE 23) | atg1/0t2 irene erductance Rato 1 oo71 10] 097] 1.0| 097| 10] 095| 10) - f=1kHe *JEDEC registered data NFA NOTE: 1. Assumes smaller value in numerator. 3-14 1979 Siliconix incorporatedNFA iconix GATE 18 BACKSIDE CONTACT AWD D ARE SYMMETRICAL 0.018 (0.457) ALL DIMENSIONS IN INCHES fale DIMENSIONS IN MILLIMETERS) n-channel JFET designed for... = ~Low and Medium Frequency Single and Differential Amplifiers = High Input tmpedance Amplifiers TYPE PACKAGE PRINCIPAL DEVICES Dual TO-71 2N3954, 2N3954A, 2N3955, 2N3955A, 2N3956-8, 2N5452-54 Single TO-72 2N3684-7 Dual Chip 2N3955CHP, 2ZN3956CHP-8CHP, 2N5454CHP Single Chip 2N3684CHP-7CHP PERFORMANCE CURVES (25C unless otherwise noted) 09 Zz 08 07 a 5 06 2 05 Zz goa re S03 2 Fad o Ip DRAIN CURRENT (mA) 3 Sf, FORWARD TRANSCONDUCTANCE (umhos) Pe = N z N a a ws 3 Output Characteristic & 8 12 % a Vog ~ DRAIN-SOURCE VOLTAGE {VOLTS) Transfer Characteristics =20V 0 7 -2.0 -3.0 40 Vs GATE-SOQURCE VOLTAGE (VOLTS) Transconductance Characteristics 8 -1.0 -2.0 -3.0 40 Vas - GATE-SOURCE VOLTAGE (VOLTS) Output Characteristic Ip DRAIN CURRENT (mA) Q 4 a 12 20 Vs DRAIN-SOURCE VOLTAGE {VOLTS} Transfer Characteristics 6.0 =20V N e S - a @ Ip DRAIN CURRENT (mA} uy 0 -1.0 -2.0 -3.0 40 Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 3000 Vps = 20V f= kHz A 3 1200 g St, FORWARD TRANSCONDUCTANCE (umhos} 1.0 -2.0 -3.0 4.0 Vs GATE-SOURCE VOLTAGE (VOLTS} ps} Siliconix BENEFITS: - - @ Wide Dynemic Range tg Specified @ Vpg = 20 V Low Capacitance Cjgg < 4 pF Low Output Conductance Output Characteristic ip ~ DRAIN CURRENT (mA) Q a 20 Vos - DRAIN-SOURCE VOLTAGE (VOLTS) Static Drain-Source ON Resistance vs Gate-Source Cutoff Voltage 3 = 100nA =0 200 o- -6.0 8.0 Vos (ott) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) "pg DRAIN-SOURCE ON RESISTANCE (OHMS) ON Resistance vs Ambient Temperature 15 Ip= uA 1.47~ Veg =0 13 12 ws 1.0 09 O8 7 tos RELATIVE TO 25C VALUE 06 0.8. 55 -15 26 c] 145 T- TEMPERATURE (C) 1979 Siliconix incorporatedPERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) Drain Current and Transconductance Common-Source Output Conductance Common-Source Output Conductance vs Gate-Source Cutoff Voltage vs Drain-Source Voltage vs Drain Current = 100. 100 zg 0 000 # 10 Voaro Tose EE 94 2 F f= 1kHz 1 e go = z 2 8 G8 | Vesto @tp=1 zo0Z 5 z 8 = a? 3g 100 8 10 Z 6 yoo FE @ = Z E ao 5 & 8 = z zg < 3 eo4 1200 8 5 Vasiott} = 4.3 < < 6 & 10 2 10 er 3 4 5 a B 2 8 3 g 2 soo & 1 3 1 8 8 g 3 Vestoft) *~1.4V = 0 oO 2 01 0 -1 -2 -3 -4 - +6 7 -8 o 5 0 15 20 25 30. 0,01 0.1 1.0 10 Ve@siotf) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Vps DRAIN-SOURCE VOLTAGE (VOLTS) Ip DRAIN CURRENT {mA} Common-Source / Drain Current and Transconductance Forward Transconductance Leakage Currents vs Ambient vs Ambient Temperature vs Drain Current Temperature 15 10K 14 = 13 @t= kHz 3 kg, 2 10 o c = e o 1K w 14 2 = > a = E 10 G o1 a 9 3 z oc 08 = 3 w c 3 0B & 100 5 07 & 0.01 0.6 & 2 06 | 0,001 -55 -185 2 65 106 146 # 10 Oo 3 50 75 #100 #126 6150 T- TEMPERATURE (C) 0.01 0.1 1.0 10 1 - TEMPERATURE (C) Ip ~ ORAIN CURRENT (mA} Gate Operating Current vs Common-Source Input Capacitance Equivalent input Noise Voltage and Drain-Gate Voltage vs Gate-Source Voltage Noise Current vs Frequency 10 1K pg tv 10-13 f=1 pgs = 0.87mA = i z= z ~ Tn z 1.0 & 2 a0 MET - 8 i 8 8 Ft 2 = 2 < 1 s 5 as 2 Rivetncat oft i 3S oS > : s # Ut : i 8 z = : 90.01 = 3 = = ae x Ip 2 mAs # F916 oss rm & pI, tozma LUT 0.001 i 1 | J o -2 4 6 10 100 mK 0 5 10 5 20 25 30 Vgs - GATE-SOURCE VOLTAGE (VOLTS) f FREQUENCY (Hz) Vog ~ ORAIN-GATE VOLTAGE (VOLTS) 1979 Siliconix incorporated 5-7 VIN xIUODSI