THYRISTOR MODULE 60A / 1200 to 1600V P D T 6 0 1 2 P D T 6 0 1 6 P D H 6 0 1 2 P D H 6 0 1 6 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING PDT TYPICAL APPLICATIONS * Rectified For General Use PDH Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:155g Symbol Grade PDT/PDH6012 PDT/PDH6016 1200 1300 1200 1300 1600 1700 1600 1700 VDRM VDSM VRRM VRSM Parameter Conditions Average Rectified Output Current IO(AV) RMS On-State Current IT(RMS) Surge On-State Current I Squared t ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor 50Hz Half Sine Wave condition Tc=82C 50 Hz Half Sine Wave,1Pulse Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125C IG=200mA, diG/dt=0.2A/s * Unit V V Max Rated Value Unit 60 A 94 A 1200 A 7200 A2s 100 A/s 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.4 to 3.5 N *m M5 Screw 2.4 to 2.8 http://store.iiic.cc/ Electrical * Thermal Characteristics Characteristics VDM= VDRM, Tj= 125C VRM= VRRM, Tj= 125C ITM= 180A, Tj=25C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C VD=2/3VDRM Tj=125C Maximum Value. Min. Typ. Max. 15 15 1.45 200 100 50 4 2.5 2 0.25 dv/dt VD=2/3VDRM Tj=125C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/s, VR=100V -di/dt=20A/s, Tj=125C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance tgt td tr IL IH Rth(j-c) Test Conditions VD=2/3VDRM Tj=125C IG=200mA, diG/dt=0.2A/s Tj=25C Tj=25C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound Value Per 1Arm http://store.iiic.cc/ Unit mA mA V mA V V V/s 100 s 6 2 4 100 50 s s s mA 0.5 0.2 C/W PDT/PDH601x OUTLINE DRAWING (Dimensions in mm) PDT PDH http://store.iiic.cc/ http://store.iiic.cc/ http://store.iiic.cc/