MOSFET - Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 mW NTPF190N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability. 700 V @ TJ = 150C Typ. RDS(on) = 152 mW Ultra Low Gate Charge (Typ. Qg = 34 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF) 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant Applications * * * * RDS(ON) MAX ID MAX 650 V 190 mW @ 10 V 20 A D G S Features * * * * * * VDSS POWER MOSFET G D S TO-220 FULLPAK CASE 221D Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter MARKING DIAGRAM $Y&Z&3&K NTPF190 N65S3HF $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code NTPF190N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 September, 2019 - Rev. 2 1 Publication Order Number: NTPF190N65S3HF/D NTPF190N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V - DC 30 V - AC (f > 1 Hz) 30 - Continuous (TC = 25C) 20* - Continuous (TC = 100C) 12.7* IDM Drain Current 50* A EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ IAS Avalanche Current (Note 2) 3.7 A EAR Repetitive Avalanche Energy (Note 1) 0.36 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD - Pulsed (Note 1) A Power Dissipation (TC = 25C) 36 W 0.29 W/C -55 to +150 C 300 C - Derate Above 25C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.7 A, RG = 25 W, starting TJ = 25C. 3. ISD 10 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit _C/W RqJC Thermal Resistance, Junction to Case, Max. 3.5 RqJA Thermal Resistance, Junction to Ambient, Max. 62.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NTPF190N65S3HF NTPF190N65S3HF TO-220 FULLPACK Tube N/A N/A 50 Units www.onsemi.com 2 NTPF190N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.65 V/_C 10 mA 100 nA 5.0 V 190 mW 65 VDS = 520 V, TC = 125_C VGS = 30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A 152 Forward Transconductance VDS = 20 V, ID = 10 A 11 S 1610 pF 30 pF gFS VGS = VDS, ID = 0.43 mA 3.0 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 316 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 59 pF Qg(tot) Total Gate Charge at 10 V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance 34 nC VDS = 400 V, ID = 10 A, VGS = 10 V (Note 4) 11 nC 13 nC f = 1 MHz 6.8 W 19 ns 19 ns 58 ns 14 ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 4.7 W (Note 4) Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 20 A ISM Maximum Pulsed Source to Drain Diode Forward Current 50 A VSD Source to Drain Diode Forward Voltage 1.3 V IS trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A VDD = 400 V, ISD = 10 A, dIF/dt = 100 A/ms 80 ns 264 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NTPF190N65S3HF TYPICAL CHARACTERISTICS 8.0 V 50 VGS = 10 V ID, DRAIN CURRENT (A) 7.0 V 6.5 V 6.0 V 10 5.5 V 1 0.1 RDS(on), DRAIN-SOURCE ON-RESISTANCE (W) 250 ms Pulse Test TC = 25C 0.2 1 10 20 100 VGS = 10 V VGS = 20 V 0.2 0 15 30 45 4 5 6 8 7 9 VGS = 0 V 250 ms Pulse Test 10 1 TJ = 150C TJ = 25C 0.1 0.01 0.001 60 TJ = -55C 0 0.5 1.0 1.5 2.0 ID, DRAIN CURRENT (A) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100K VGS, GATE-SOURCE VOLTAGE (V) 10 10K CAPACITANCE (pF) 3 Figure 2. Transfer Characteristics 0.3 Ciss 1K 100 0.1 TJ = -55C Figure 1. On-Region Characteristics 0.4 1 TJ = 150C VGS, GATE-TO-SOURCE VOLTAGE (V) TC = 25C 10 TJ = 25C VDS, DRAIN-SOURCE VOLTAGE (V) 0.5 0.1 VDS = 20 V 250 ms Pulse Test 10 1 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 Coss VGS = 0 V f = 1 MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 1 10 100 1K VDD = 130 V ID = 10 A VDD = 400 V 8 6 4 2 0 0 8 16 24 32 VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 40 NTPF190N65S3HF 1.2 3.0 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Normalized) VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 -50 0 50 100 ID, DRAIN CURRENT (A) 1.0 0.5 -50 1 ms Operation in this Area is Limited by RDS(on) 10 ms TC = 25C TJ = 150C Single Pulse 1 15 10 5 DC 10 100 0 1000 25 50 75 100 125 150 VDS, DRAIN-SOURCE VOLTAGE (V) TC, CASE TEMPERATURE (C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 8 EOSS (mJ) 150 100 20 100 ms 6 4 2 0 50 Figure 8. On-Resistance Variation vs. Temperature 10 0 0 Figure 7. Breakdown Voltage Variation vs. Temperature 10 0.01 1.5 TJ, JUNCTION TEMPERATURE (C) 10 ms 0.1 2.0 TJ, JUNCTION TEMPERATURE (C) 100 1 ID = 10 A VGS = 10 V 2.5 0 150 ID, DRAIN CURRENT (A) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 130 260 390 520 650 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. EOSS vs. Drain-to-Source Voltage www.onsemi.com 5 NTPF190N65S3HF r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 0.01 0.001 0.00001 Single Pulse 0.0001 t2 ZqJC(t) = r(t) x RqJC RqJC = 3.5C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.001 0.01 0.1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 100 1000 NTPF190N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NTPF190N65S3HF + DUT VDS - ISD L Driver RG Same Type as DUT VGS - dv/dt controlled by RG - ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220 FULLPAK CASE 221D-03 ISSUE K -T- -B- F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 -Y- K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO-220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb-Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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