NTPF190N65S3HF - ON SEMICONDUCTOR

September, 2019 − Rev. 2

1Publication Order Number:

NTPF190N65S3HF/D

MOSFET – Power,

N-Channel, SUPERFET III,

FRFET

650 V, 20 A, 190 mW

NTPF190N65S3HF

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET is very suitable for the

various power system for miniaturization and higher efficiency.

SUPERFET III FRFET MOSFET’s optimized reverse recovery

performance of body diode can remove additional component and

improve system reliability.

Features

•700 V @ TJ = 150°C

•Typ. RDS(on) = 152 mW

•Ultra Low Gate Charge (Typ. Qg = 34 nC)

•Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF)

•100% Avalanche Tested

•These Devices are Pb−Free and are RoHS Compliant

Applications

•Computing / Display Power Supplies

•Telecom / Server Power Supplies

•Industrial Power Supplies

•Lighting / Charger / Adapter

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

www.onsemi.com

MARKING DIAGRAM

VDSS RDS(ON) MAX ID MAX

650 V 190 mW @ 10 V 20 A

POWER MOSFET

TO−220 FULLPAK

CASE 221D

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

NTPF190N65S3HF = Specific Device Code

$Y&Z&3&K

NTPF190

N65S3HF

NTPF190N65S3HF

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)

Symbol Parameter Value Unit

VDSS Drain to Source Voltage 650 V

VGSS Gate to Source Voltage − DC ±30 V

− AC (f > 1 Hz) ±30

IDDrain Current − Continuous (TC = 25°C) 20* A

− Continuous (TC = 100°C) 12.7*

IDM Drain Current − Pulsed (Note 1) 50* A

EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ

IAS Avalanche Current (Note 2) 3.7 A

EAR Repetitive Avalanche Energy (Note 1) 0.36 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 50

PDPower Dissipation (TC = 25°C) 36 W

− Derate Above 25°C 0.29 W/°C

TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C

TLMaximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. IAS = 3.7 A, RG = 25 W, starting TJ = 25°C.

3. ISD ≤ 10 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

RqJC Thermal Resistance, Junction to Case, Max. 3.5 _C/W

RqJA Thermal Resistance, Junction to Ambient, Max. 62.5

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity

NTPF190N65S3HF NTPF190N65S3HF TO−220

FULLPACK Tube N/A N/A 50 Units

NTPF190N65S3HF

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage VGS =0V, I

D= 1 mA, TJ=25_C650 V

VGS =0V, I

D= 1 mA, TJ= 150_C700 V

DBVDSS/DTJBreakdown Voltage Temperature

Coefficient ID= 10 mA, Referenced to 25_C0.65 V/_C

IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V 10 mA

VDS = 520 V, TC= 125_C65

IGSS Gate to Body Leakage Current VGS =±30 V, VDS =0V ±100 nA

ON CHARACTERISTICS

VGS(th) Gate Threshold Voltage VGS =V

DS, ID= 0.43 mA 3.0 5.0 V

RDS(on) Static Drain to Source On Resistance VGS =10V, I

D=10A 152 190 mW

gFS Forward Transconductance VDS =20V, I

D=10A 11 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance

VDS = 400 V, VGS = 0 V, f = 1 MHz

1610 pF

Coss Output Capacitance 30 pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V 316 pF

Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V 59 pF

Qg(tot) Total Gate Charge at 10 V

VDS = 400 V, ID= 10 A, VGS =10V

(Note 4)

34 nC

Qgs Gate to Source Gate Charge 11 nC

Qgd Gate to Drain “Miller” Charge 13 nC

ESR Equivalent Series Resistance f = 1 MHz 6.8 W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time

VDD = 400 V, ID=10A,

VGS =10V, R

g= 4.7 W

(Note 4)

19 ns

trTurn-On Rise Time 19 ns

td(off) Turn-Off Delay Time 58 ns

tfTurn-Off Fall Time 14 ns

SOURCE-DRAIN DIODE CHARACTERISTICS

ISMaximum Continuous Source to Drain Diode Forward Current 20 A

ISM Maximum Pulsed Source to Drain Diode Forward Current 50 A

VSD Source to Drain Diode Forward

Voltage VGS =0V, I

SD =10A 1.3 V

trr Reverse Recovery Time VDD = 400 V, ISD = 10 A,

dIF/dt = 100 A/ms

80 ns

Qrr Reverse Recovery Charge 264 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

NTPF190N65S3HF

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

VDS, DRAIN−SOURCE VOLTAGE (V)

201010.2

0.1

Figure 2. Transfer Characteristics

Figure 3. On−Resistance Variation vs. Drain

Current and Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

865439

45 6030150

0.1

0.3

0.5

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and Temperature

Figure 5. Capacitance Characteristics

VSD, BODY DIODE FORWARD VOLTAGE (V)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

2.01.51.00.50

0.001

0.01

0.1

1K1001010.1

0.1

100

10K

100K

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−SOURCE ON−RESISTANCE (W)

IS, REVERSE DRAIN CURRENT (A)

CAPACITANCE (pF)

TJ = 150°C

TJ = 25°C

TJ = −55°C

VDS = 20 V

250 ms Pulse Test

TJ = 150°C

TJ = 25°C

TJ = −55°C

250 ms Pulse Test

TC = 25°C

VGS = 10 V

5.5 V

6.0 V

6.5 V

7.0 V

8.0 V

VGS = 10 V

VGS = 20 V

Ciss

Coss

Crss

VGS = 0 V

f = 1 MHz

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

100 VGS = 0 V

250 ms Pulse Test

Figure 6. Gate Charge Characteristics

QG, TOTAL GATE CHARGE (nC)

4032241680

VGS, GATE−SOURCE VOLTAGE (V)

VDD = 130 V

VDD = 400 V

ID = 10 A

TC = 25°C

0.2

0.4

NTPF190N65S3HF

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TYPICAL CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs.

Temperature

TJ, JUNCTION TEMPERATURE (°C)

150100500−50

0.8

0.9

1.0

1.1

1.2

Figure 8. On−Resistance Variation vs.

Temperature

Figure 9. Maximum Safe Operating Area

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−SOURCE VOLTAGE (V)

100500−50

0.5

1.0

1.5

2.0

2.5

3.0

1000100101

0.01

0.1

Figure 10. Maximum Drain Current vs. Case

Temperature

TC, CASE TEMPERATURE (°C)

150125100755025

BVDSS, DRAIN−TO−SOURCE

BREAKDOWN VOLTAGE (Normalized)

RDS(on), DRAIN−SOURCE

ON−RESISTANCE (Normalized)

ID, DRAIN CURRENT (A)

100

TC = 25°C

TJ = 150°C

Single Pulse

Operation in this Area

is Limited by RDS(on)

10 ms

100 ms

1 ms

10 ms

ID = 10 A

VGS = 10 V

VGS = 0 V

ID = 10 mA

Figure 11. EOSS vs. Drain−to−Source Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

6505203902601300

EOSS (mJ)

150

NTPF190N65S3HF

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TYPICAL CHARACTERISTICS

Figure 12. Transient Thermal Response Curve

t, RECTANGULAR PULSE DURATION (sec)

100.10.0001

0.001

0.1

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

100010.010.00001 0.001

Single Pulse

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.01

0.01 ZqJC(t) = r(t) x RqJC

RqJC = 3.5°C/W

Peak TJ = PDM x ZqJC(t) + TC

Duty Cycle, D = t1 / t2

PDM

100

NTPF190N65S3HF

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Figure 13. Gate Charge Test Circuit & Waveform

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms

VDS

VGS

DUT

VDD

VDS

VGS

10%

90%

10%

90% 90%

ton toff

trtf

td(on) td(off)

Qgd

Qgs

VGS

Charge

VDS

VGS

DUT

IG = Const.

VDD

VDS

DUT

VGS

VDD

Time

IAS

BVDSS

ID(t)

VDS(t)

EAS +1

@LIAS

NTPF190N65S3HF

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Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDD

ISD

VDS

−

VGS

Same Type

as DUT

− dv/dt controlled by RG

− ISD controlled by pulse period

Driver

VGS

(Driver)

ISD

(DUT)

VDS

(DUT) VSD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode

Forward Voltage Drop

D+

Gate Pulse Width

Gate Pulse Period

SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United

States and/or other countries.

TO−220 FULLPAK

CASE 221D−03

ISSUE K

DATE 27 FEB 2009

STYLE 4:

PIN 1. CATHODE

2. ANODE

3. CATHODE

STYLE 1:

PIN 1. GATE

2. DRAIN

3. SOURCE

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

DIM

MIN MAX MIN MAX

MILLIMETERS

0.617 0.635 15.67 16.12

INCHES

B0.392 0.419 9.96 10.63

C0.177 0.193 4.50 4.90

D0.024 0.039 0.60 1.00

F0.116 0.129 2.95 3.28

G0.100 BSC 2.54 BSC

H0.118 0.135 3.00 3.43

J0.018 0.025 0.45 0.63

K0.503 0.541 12.78 13.73

L0.048 0.058 1.23 1.47

N0.200 BSC 5.08 BSC

Q0.122 0.138 3.10 3.50

R0.099 0.117 2.51 2.96

S0.092 0.113 2.34 2.87

U0.239 0.271 6.06 6.88

STYLE 5:

PIN 1. CATHODE

2. ANODE

3. GATE

STYLE 6:

PIN 1. MT 1

2. MT 2

3. GATE

SEATING

PLANE

−T−

SCALE 1:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW

STANDARD 221D-03.

MARKING

DIAGRAMS

xxxxxx = Specific Device Code

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

xxxxxxG

AYWW

A = Assembly Location

Y = Year

WW = Work Week

xxxxxx = Device Code

G = Pb−Free Package

AKA = Polarity Designator

AYWW

xxxxxxG

AKA

Bipolar Rectifier

−B−

−Y−

3 PL

123

0.25 (0.010) Y

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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