Mar. 2002
➁
➀➂
Measurement point of
case temperature
✽
➀
➁
➂
T1TERMINAL
T2TERMINAL
GATE TERMINAL
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
E
BCR3KM OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Control of heater such as electric rice cooker, electric pot
● IT (RMS) .................................................................. 3A
● VDRM ................................................................. 600V
● IFGT !, IRGT ! , IRGT #................... 15mA (10mA) ✽3
● UL Recognized: Yellow Card No.E80276(N)
File No. E80271
✽1. Gate open.
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg—
Viso
Symbol A
A
A2s
W
W
V
A
°C
°C
g
V
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Symbol
V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VDRM
VDSM
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class Unit
Ratings Unit
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
12
600
720
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
Mar. 2002
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽4.The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-a)
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽4
Junction to ambient
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Thermal resistance
Limits Max.
2.0
1.5
1.5
1.5
1.5
15✽3
15✽3
15✽3
—
4.0
50
!
@
#
!
@
#
Typ.
—
—
—
—
—
—
—
—
—
—
—
Min.
—
—
—
—
—
—
—
—
0.2
—
—
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
Symbol Parameter Test conditions
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
3.80.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
Tj = 25°C
10023 5710
123 5710
2
44
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE
CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
2
10
1
357 2
10
2
357 2
10
3
357
I
GM
=
0.5A
V
GT
I
RGT
I
P
GM
= 3W
P
G(AV)
= 0.3W
I
FGT
I
, I
RGT III
V
GD
= 0.2V 10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
I
RGT
III
I
FGT
I
, I
RGT I
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120 2310
–1
5710
0
23 5710
1
23 5710
2
4.0
4.5
5.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2310
2
5710
3
23 57
10
2
2
10
3
357 2
10
4
357 2
10
5
357
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
0
1.0
2.0
3.0
4.0
5.0
4.5
3.5
2.5
1.5
0.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE VOLTAGE (V)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
TYPICAL EXAMPLE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
GATE CURRENT (mA)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
160
120
100
60
20
04.00 0.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0 0
20
40
60
80
100
120
140
160
024681357
100 100 t2.3
120 120 t2.3
60 60 t2.3
0
20
40
60
80
100
120
140
160
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 10
2
10
3
2
3
5
7
10
4
2
3
5
7
10
5
2
3
5
7
–60 –20 20 60 100 140–40 0 40 80 120
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
–60–40 0 40 80 120–20 20 60 100 140 10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
–60 –20 20 60 100 140–40 0 40 80 120
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
360°
CONDUCTION RESISTIVE,
INDUCTIVE LOADS
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
NATURAL CONVECTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT
(T
j
= t°C)
HOLDING CURRENT
(T
j
= 25°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
T2
+
, G
+
T2
–
, G
–
TYPICAL
EXAMPLE
T2
+
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
0
10
1
23457
10
2
23457
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
I
FGT I
I
RGT I
I
RGT III
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
TYPICAL EXAMPLE TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
T
j
= 125°C
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6Ω6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
Mar. 2002
The product guaranteed maximum junction
temperature 150°C (See warning.)
➁
➀➂
Measurement point of
case temperature
✽
➀
➁
➂
T1TERMINAL
T2TERMINAL
GATE TERMINAL
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
E
BCR3KM OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Control of heater such as electric rice cooker, electric pot
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
● IT (RMS) .................................................................. 3A
● VDRM ................................................................. 600V
● IFGT !, IRGT ! , IRGT #................... 15mA (10mA) ✽3
● UL Recognized: Yellow Card No.E80276(N)
File No. E80271
✽1. Gate open.
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg—
Viso
Symbol A
A
A2s
W
W
V
A
°C
°C
g
V
3
30
3.7
3
0.3
6
0.5
–40 ~ +150
–40 ~ +150
2.0
2000
Symbol
V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VDRM
VDSM
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class Unit
Ratings Unit
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=136°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
12
600
720
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽4.The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-a)
Tj=150°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ✽4
Junction to ambient
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Thermal resistance
Limits Max.
2.0
1.5
1.5
1.5
1.5
15✽3
15✽3
15✽3
—
4.0
50
!
@
#
!
@
#
Typ.
—
—
—
—
—
—
—
—
—
—
—
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
—
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
Symbol Parameter Test conditions
ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
The product guaranteed maximum junction
temperature 150°C (See warning.)
0.5 1.5 2.5 3.51.0 2.0 3.0 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
T
j
= 25°C
T
j
= 150°C
10
0
23 5710
1
23 5710
2
44
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE
CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
I
FGT I,
I
RGT I
I
RGT III
–60 –20 20 60 100 160140–40 0 40 80 120
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
10
0
2310
0
5710
1
23 5710
2
23 5710
3
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2
I
GM
=
0.5A
V
GT
I
RGT
I
P
GM
= 3W
P
G(AV)
= 0.3W
I
FGT
I
, I
RGT III
V
GD
= 0.1V
2310
–1
5710
0
23 5710
1
23 5710
2
4.0
4.5
5.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2310
2
5710
3
23 57
10
22
10
3
357 2
10
4
357 2
10
5
357
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
0
1.0
2.0
3.0
4.0
5.0
4.5
3.5
2.5
1.5
0.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
160
120
100
60
20
04.00 0.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0
3.22.82.4
160
120
100
60
20
000.4 1.2 2.0
40
80
140
0.8 1.6
103
7
5
3
2
102
104
7
5
3
2
105
7
5
3
2
106
7
5
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
103
5
7
3
2
5
4
4
7
3
2
102
101
–60 –20 20 60 100 160140–40 0 40 80 120
0
20
40
60
80
100
120
140
160
024681357
100 100 t2.3
120 120 t2.3
60 60 t2.3
103
7
5
3
2
7
5
3
2
7
5
3
2
102
101
100
–60 –20 20 60 100 160140–40 0 40 80 120
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
360°
CONDUCTION RESISTIVE,
INDUCTIVE LOADS
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALL FINS ARE BLACK
PAINTED ALUMINUM
AND GREASED
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
NATURAL CONVECTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS, CURVES
APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT
(T
j
= t°C)
HOLDING CURRENT
(T
j
= 25°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
T2
+, G+
T2
–, G–TYPICAL
EXAMPLE
T2
+, G–
TYPICAL
EXAMPLE
DISTRIBUTION
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
IRGT III
IRGT I
IFGT I
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 160140–40 0 40 80 120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
TYPICAL EXAMPLE TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
Tj = 150°C
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
C
1
C
1
= 0.1~0.47µF
R
1
= 47~100ΩC
0
= 0.1µF
R
0
= 100Ω
C
0
R
0
R
1
6Ω6Ω
6Ω
6V 6V
6V
RGRG
RG
A
V
A
V
A
V
LOAD
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
