AP9972AGI RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Single Drive Requirement BVDSS 60V RDS(ON) 16m ID Fast Switching Performance 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-220CFM(I) The TO-220CFM isolation package is widely preferred for all commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 32 A ID@TC=100 Continuous Drain Current, VGS @ 10V 20.3 A 1 IDM Pulsed Drain Current 120 A PD@TC=25 Total Power Dissipation 31.3 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data and specifications subject to change without notice 1 201207192 AP9972AGI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=30A - - 16 m RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=40A - 44 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=40A - 49 80 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 13 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC VDS=30V - 14 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=40A - 80 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 27 - ns tf Fall Time RD=0.75 - 57 - ns Ciss Input Capacitance VGS=0V - 2410 3860 pF Coss Output Capacitance VDS=25V - 290 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 240 - pF Rg Gate Resistance f=1.0MHz - 2 3 Min. Typ. IS=30A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=30A, VGS=0V, - 48 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 75 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9972AGI 200 100 10V 9.0V 80 8.0V 150 10V 9.0V 8.0V 7.0V o T C =150 C ID , Drain Current (A) ID , Drain Current (A) T C =25 o C 7.0V 100 V G =6.0V V G =6.0V 60 40 50 20 0 0 0 2 4 6 8 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 2.0 I D =30A V G =10V I D = 30 A o T C =25 C Normalized RDS(ON) RDS(ON) (m) 18 16 14 1.6 1.2 0.8 12 0.4 10 5 6 7 8 9 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 40 1.5 1.3 IS(A) T j =150 o C Normalized VGS(th) 30 T j =25 o C 20 1.1 0.9 10 0.7 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9972AGI 12 f=1.0MHz 4000 V DS = 32 V V DS = 40 V V DS = 48 V 10 3000 8 C (pF) VGS , Gate to Source Voltage (V) I D = 40 A 6 C iss 2000 4 1000 2 0 C oss C rss 0 0 20 40 60 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100 ID (A) 10us 100us 10 1ms 10ms 100ms 1s DC 1 T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 80 ID , Drain Current (A) V DS =5V o VG o T j =25 C T j =150 C QG 60 10V QGS 40 QGD 20 Charge Q 0 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4