Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 60V
▼ Single Drive Requirement RDS(ON) 16mΩ
▼ Fast Switching Performance ID32A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data and specifications subject to change without notice
AP9972AGI
201207192
RoHS-compliant Product
1
Parameter Rating
Drain-Source Voltage 60
Gate-Source Voltage +20
Continuous Drain Current, VGS @ 10V 32
Continuous Drain Current, VGS @ 10V 20.3
Pulsed Drain Current1120
Total Power Dissipation 31.3
-55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness. GDSTO-220CFM(I)
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=30A - - 16 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=40A - 44 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=40A - 49 80 nC
Qgs Gate-Source Charge VDS=48V - 13 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC
td(on) Turn-on Delay Time2VDS=30V - 14 - ns
trRise Time ID=40A - 80 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 27 - ns
tfFall Time RD=0.75Ω-57-ns
Ciss Input Capacitance VGS=0V - 2410 3860 pF
Coss Output Capacitance VDS=25V - 290 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 240 - pF
RgGate Resistance f=1.0MHz - 2 3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=30A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=30A, VGS=0V, - 48 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 75 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9972AGI
AP9972AG
I
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
20
40
60
80
100
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
9.0V
8.0V
7.0V
VG=6.0V
10
12
14
16
18
20
5678910
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=30A
TC=25oC
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=30A
VG=10V
0
10
20
30
40
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.5
0.7
0.9
1.1
1.3
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th)
0
50
100
150
200
02468
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
9.0V
8.0V
7.0V
VG=6.0V
AP9972AG
I
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
Q
VG
10V
QGS QGD
QG
Charge
0
1000
2000
3000
4000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
12
0 204060
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =32V
VDS =40V
VDS =48V
I
D=40A
0
20
40
60
80
0246810
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
10us
100us
1ms
10ms
100ms
1s
DC
