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FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Features General Description * UL Certified No.E209024 (UL1557) The FPAM50LH60 is a PFC SPM(R) 2 module providing a fully-featured, high-performance Interleaved PFC (Power Factor Correction) input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockout, over-current shutdown, thermal monitoring, and fault reporting. These modules also feature a fullwave rectifier and high-performance output diodes for additional space savings and mounting convenience. * 600 V - 50 A 2-Phase Interleaved PFC with Integral Gate Driver and Protection * Very Low Thermal Resistance Using Al2O3 DBC Substrate * Full-Wave Bridge Rectifier and High-Performance Output Diode * Optimized for 20kHz Switching Frequency * Built-in NTC Thermistor for Temperature Monitoring * Isolation Rating: 2500 Vrms/min Applications * 2-Phase Interleaved PFC Converter Fig. 1. 3D Package Drawing (Click to Activate 3D Content) Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FPAM50LH60 FPAM50LH60 S32EA-032 Rail 8 (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 1 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC June 2015 * For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection * Fault signal: corresponding to OC and UV fault * Built-in thermistor: temperature monitoring * Input interface : active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input Pin Configuration (1)CSC (2)COM (3)VFO (4)INX (5)INY (6)COM (7)n.c. (8)VCC (9)VCC (10)COM (24)P (25)P (26)PY (27)n.c. (28)PX (11)RTH (12)VTH (29)X (13)NR (14)NR (30)Y (15)n.c. (16)n.c. (17)n.c. (31)NP Case temperature(TC) detecting point (18)R (19)R (20)n.c. (21)n.c. (32)PR (22)S (23)S Dimension unit: millimeter Figure 2. Top View (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 2 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Integrated Drive, Protection and System Control Functions FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Pin Descriptions Pin Number Pin Name Pin Description 1 CSC 2,6,10 COM Common Supply Ground 3 VFO Fault Output 4 INX PWM Input for X IGBT Drive 5 INY PWM Input for Y IGBT Drive Signal Input for Over-Current Detection 7 N.C No Connection 8,9 VCC Common Supply Voltage of IC for IGBT Drive 11 RTH Series Resistor for The Use of Thermistor 12 VTH Thermistor Bias Voltage 13,14 NR Negative DC-Link of Rectifier Diode 15,16,17 N.C No Connection 18,19 R 20,21 N.C AC Input for R-Phase 22,23 S AC Input for S-Phase 24,25 P Output of Diode No Connection 26 PY Input of Diode 27 N.C No Connection 28 PX Input of Diode 29 X Output of X Phase IGBT 30 Y Output of Y Phase IGBT 31 NP Negative DC-Link of IGBT 32 PR Positive DC-Link of Rectifier Diode Internal Equivalent Circuit (11)RTH (24)(25)P THERMISTOR (12)VTH (1)CSC (3)VFO (4)INX (5)INY (8)(9)VCC (2)(6)(10) COM (26)PY (28)PX CSC (29)X VFO (30)Y INX INY OUT X (32)PR VCC (18)(19)R OUT Y (22)(23)S COM (31)NP (13)(14)NR Figure 3. Internal Block Diagram (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 3 www.fairchildsemi.com Converter Part Symbol Vi VPN Parameter Conditions Rating Unit Input Supply Voltage Applied between R - S 264 Vrms Output Voltage Applied between X - NP, Y - NP, P - PX, P - PY 450 V Output Supply Voltage (Surge) Applied between X - NP, Y - NP, P - PX, P - PY 500 V VCES Collector-emitter Voltage Breakdown Voltage between X - NP, Y - NP 600 V VRRM Repetitive Peak Reverse Voltage of FRD Breakdown Voltage between P - PX, P - PY 600 V VRRMR Repetitive Peak Reverse Voltage of Rec- Breakdown Voltage between PR - R, PR - S, tifier R - NR, S - NR 900 V VPN(Surge) *IF *IFSM *IFR FRD Forward Current TC = 25C, TJ < 125C 50 A Peak Surge Current of FRD Non-Repetitive, 60 Hz Single Half-Sine Wave 500 A Rectified Forward Current TC = 25C, TJ < 125C 50 A Peak Surge Current of Rectifier Non-Repetitive, 60 Hz Single Half-Sine Wave 500 A *IC Each IGBT Collector Current TC = 25C, TJ < 125C 50 A *ICP Each IGBT Collector Current(Peak) TC = 25C, TJ < 125C, Under 1 ms Pulse Width 100 A *IFSMR *PC TJ Collector Dissipation TC = 25C per IGBT Operating Junction Temperature (1st Note 1) 135 W -40 ~ 125 C 1st Notes: 1. The maximum junction temperature rating of the power chips integrated within the PFC SPM(R) product is 125C. 2. Marking " * " is calculation value or design factor. Control Part Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between VCC - COM 20 V VIN Input Signal Voltage Applied between INX, INY - COM -0.3 ~ VCC + 0.3 V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V IFO Fault Output Current Sink Current at VFO Pin 1 mA VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V Total System Symbol Parameter TSTG Storage Temperature VISO Isolation Voltage Conditions Rating 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat-Sink Plate Unit -40 ~ 125 C 2500 Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Parameter Junction to Case Thermal Resistance Rth(j-c)R (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 Condition Each IGBT under Operating Condition Min. - Typ. Max. - 0.74 Unit C/W Each Diode under Operating Condition - - 1.13 C/W Each Rectifier under Operating Condition - - 0.74 C/W 4 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Absolute Maximum Ratings (TJ = 25C, unless otherwise specified.) Converter Part Symbol VCE(SAT) Parameter Conditions Min. Typ. Max. Unit IGBT Saturation Voltage VCC = 15 V, VIN = 5 V, IC = 50 A - 1.7 2.2 V VFF FRD Forward Voltage IF = 50 A - 1.9 2.4 V VFR Rectifier Forward Voltage IFR = 50 A - 1.13 1.35 V IRR Switching Characteristic VPN = 400 V, VCC = 15 V, IC = 25 A, VIN = 0 V 5 V, Inductive Load (1st Note 3), per IGBT - 27 - A tRR - 55 - ns tON - 772 - ns tOFF - 1117 - ns tC(ON) - 110 - ns - 125 - ns - - 250 A tC(OFF) ICES Collector - Emitter Leakage Current VCES = 600 V 1st Notes: 3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 100% IC tRR 100% IC IRR VCE IC 90% IC 10% IC 10% VCE 10% VCE 10% IC VIN tON tOFF tC(OFF) tC(ON) (a) turn-on (b) turn-off Figure 4. Switching Time Definition (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 5 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Electrical Characteristics (TJ = 25C, unless otherwise specified.) Symbol Parameter Conditions Min. Typ. Max. Unit IQCC Quiescent VCC Supply Current VCC = 15 V, INX, INY - COM = 0 V, Supply current between VCC and COM - - 2.65 mA IPCC Operating VCC Supply Current VCC = 15 V, fPWM = 20 kHz, Duty = 50% Applied to One PWM Signal Input per IGBT Supply Current between VCC and COM - - 7.0 mA VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 10 k to 5 V Pull-up 4.5 - - V - - 0.5 V VSC(Ref) Over-Current Protection Trip VCC = 15 V Level Voltage of CSC Pin VSC = 1 V, VFO Circuit: 10 k to 5 V Pull-up 0.45 0.5 0.55 V UVCCD Supply Circuit UnderVoltage Protection Detection Level 10.5 - 13.0 V Reset Level 11.0 - 13.5 V 30 - - s VFOL UVCCR tFOD Fault-Out Pulse Width VIN(ON) ON Threshold Voltage Applied between INX, INY - COM 2.6 - - V VIN(OFF) OFF Threshold Voltage Applied between INX, INY - COM - - 0.8 V Resistance of Thermistor at TTH = 25C (1st Note 4, Figure 5) - 47 - k at TTH = 100C (1st Note 4, Figure 5) - 2.9 - k RTH 1st Notes: 4. TTH is the temperature of thermister itself. To know case temperature ( TC), please make the experiment considering your application. R-T Curve 200 4 Resistance RTH[k] Resistance RTH[k] 150 100 3 2 1 95 100 105 110 115 120 125 o Temperature TTH[ C] 50 0 0 25 50 75 100 125 o Temperature TTH[ C] Figure 5. R-T Curve of The Built-in Thermistor (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 6 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Control Part Symbol Parameter Conditions Vi Input Supply Voltage Applied between R - S Ii Input Current TC < 100C, Vi = 220 V, VO = 360 V, fPWM = 20 kHz per IGBT VPN Supply Voltage Applied between X - NP, Y - NP, P - PX, P - PY VCC Control Supply Voltage Applied between VCC - COM dVCC/dt IFO fPWM Supply Variation Min. Typ. Max. Unit 187 - 253 Vrms - - 35 Arms - - 400 V 13.5 15.0 16.5 V -1 - 1 V/s Fault Output Current Sink Current at VFO Pin - - 1 mA PWM Input Frequency -40C < TJ < 125C per IGBT - 20 - kHz Mechanical Characteristics and Ratings Parameter Conditions Mounting Torque Mounting Screw: M4 Device Flatness See Figure 6 Min. Typ. Max. Unit 0.78 0.98 1.17 N*m Recommended 0.98 N*m Recommended 10 kg*cm Weight 8 10 12 kg*cm 0 - +150 m - 32 - g Figure 6. Flatness Measurement Position (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 7 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Recommended Operating Conditions (TJ = 25C, unless otherwise specified.) Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when the next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under-voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under-voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 7. Under-Voltage Protection (with the external over current detection circuit) c1 : Normal operation: IGBT ON and carrying current. Input Voltage (VIN) c6 c7 c2 : Over-current detection (OC trigger). c3 : Hard IGBT gate interrupt. Internal IGBT Gate-Emitter Voltage c4 c4 : IGBT turns OFF. c3 c5 : Fault output timer operation starts. c2 c6 : Input "LOW": IGBT OFF state. OC c7 : Input "HIGH": IGBT ON state, but during the active period of fault output the IGBT doesn't turn ON. c8 : IGBT OFF state. c1 c8 Output Current Input signal to CSC pin for Protection Fault Output Signal SET RESET c5 Figure 8. Over-Current Protection (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 8 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Time Charts of Protective Function Current sensing RT current protection R TH P THERMISTOR V TH +5 V RSCF MCU / Controller RFO CSCF PX PY CSC X VFO CF RF CF RF Y L INX L OUT X INY +15 V VCC VDC PR R OUT Y VAC S COM DY NP DX NR Figure 9. Typical Application Circuit 2nd Notes: 1. To avoid malfunction, the wiring of each input should be as short as possible(less than 2 ~ 3 cm). 2. VFO output is open-drain type. This signal line should be pulled up to the positive-side of the MCU or control power supply with a resistor that makes IFO up to 1 mA. 3. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RFCF constant should be selected in the range 50~150ns (recommended RF = 100 , CF = 1 nF). 4. To prevent error of the protection function, the wiring related with RSCF and CSCF should be as short as possible. 5. In the over current protection circuit, please select the RSCF , CSCF time constant in the range 1.5 ~ 2 s. 6. Each capacitors should be mounted as close to the PFC SPM(R) product pins as possible. 7. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the MCU / controller and the relays. 8. Internal NTC thermistor can be used for monitoring of the case temperature and protecting the device from the overheating operation. Select an appropriate resistor RT according to the application. 9. It is recommended that anti-parallel diode (DX ,DY) be connected with each IGBT. (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 9 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC +5 V Input signal for over FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD32BA.pdf (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 10 www.fairchildsemi.com FPAM50LH60 PFC SPM(R) 2 Series for 2-Phase Interleaved PFC (c)2012 Fairchild Semiconductor Corporation FPAM50LH60 Rev. 1.4 11 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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