VS-SD553C..S50L Series
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Fast Recovery Diodes
(Hockey PUK Version), 560 A
FEATURES
• High power fast recovery diode series
• 6.0 μs recovery time
• High voltage ratings up to 4500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC® B-PUK (DO-200AB)
• Maximum junction temperature 125 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IF(AV) 560 A
Package B-PUK (DO-200AB)
Circuit configuration Single
B-PUK (DO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
560 A
Ths 55 °C
IF(RMS)
1120 A
Ths 25 °C
IFSM
50 Hz 12 000 A
60 Hz 12 570
I2t50 Hz 721 kA2s
60 Hz 658
VRRM Range 3000 to 4500 V
trr
5.0 μs
TJ125 °C
TJ-40 to +125
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
VS-SD553C..S50L
30 3000 3100
75
36 3600 3700
40 4000 4100
45 4500 4600
VS-SD553C..S50L Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature IF(AV) 180° conduction, half sine wave
Double side (single side) cooled
560 (210) A
55 (85) °C
Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 1120
A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
12 000
t = 8.3 ms 12 570
t = 10 ms 50 % VRRM
reapplied
10 100
t = 8.3 ms 10 570
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
721
kA2s
t = 8.3 ms 658
t = 10 ms 50 % VRRM
reapplied
510
t = 8.3 ms 466
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 7210 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 1.77 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.95
Low level value of forward
slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.98
mW
High level value of forward
slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.89
Maximum forward voltage drop VFM Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave 3.24 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(μs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
Vr
(V)
trr AT 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
S50 5.0 1000 100 -50 6.0 900 250
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.073 K/W
DC operation double side cooled 0.031
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style Conforms to JEDEC®B-PUK (DO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
IFM trr
dir
dt
IRM(REC)
Qrr
t
VS-SD553C..S50L Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
30
40
50
60
70
80
90
100
110
120
130
0100200300400
30° 60° 90° 120°
180°
Average Forward Current (A)
Maxim um Allowable Heatsink Temperature (°C)
Cond uction Angle
SD 553C ..S50L Serie s
(Sin gle Side C oo led)
R (DC ) = 0.073 K/W
th J- hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 100 20 0 30 0 400 5 00 600
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maxim um Allowable Heatsink Temperature (°C)
Conduction Period
SD 553C ..S50L Series
(Single Side C oole d)
R ( D C) = 0.0 73 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
30° 60° 90° 120° 180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature ( °C)
Conduction Angle
SD553C..S50L Series
(D ouble Side Cooled )
R (DC ) = 0.031 K/W
thJ-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
30° 60°
90°
180°
DC
120°
Average Forw ard Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD553C..S50L Series
(Double Side Cooled)
R (D C) = 0.031 K/ W
thJ-h s
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
Averag e Forw ard Current (A)
Maximum Average Forward Power Loss (W)
RMS Limit
Conduction Angle
SD553C..S50L Series
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Lim it
Maximum Average Forward Power Loss (W)
Conduction Period
SD553C..S50L Series
T = 125°C
J
VS-SD553C..S50L Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
001011
Number Of Equa l Amp litude Ha lf Cycle C urrent Pulses (N)
Pe a k H a lf S in e W a v e F o rw a rd C u rr e n t ( A )
SD 553C ..S50L Series
In itia l T = 1 25 °C
@ 60 Hz 0 .0083 s
@ 50 Hz 0 .0100 s
At Any Rated Load Condition And With
50% Ra ted V Applie d Fo llow ing Surge
RRM
J
200 0
400 0
600 0
800 0
10000
12000
14000
11.010.0
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Peak Half Sine W ave Forward Current (A)
SD553C..S50L Series
Initial T = 125°C
No Voltage Reapplied
50% Rated V Reapplied
Versu s P ulse Tra in D uration.
RRM
J
100
1000
10000
1.522.533.544.55
T = 25°C
J
Instantaneous Forward Voltage (V)
In stan taneous Forward Current (A)
T = 125°C
J
SD553C..S50L Series
0.001
0.01
0.1
0. 00 1 0 .0 1 0 .1 1 1 0 10 0
Sq u a re W ave Pu lse D ura tio n (s)
thJ-hs
Transien t Therm al Im pedan ce Z (K/W )
Ste a d y State V alu e
R = 0.073 K/W
(Single Side C o ole d)
R = 0.031 K/W
(Double Side Cooled)
(D C Ope ratio n)
thJ-hs
thJ- hs
SD 553 C..S50 L Serie s
0
50
100
150
200
250
300
350
400
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
T = 125°C
T = 25°C
J
J
SD55 3C..S50L Series
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
VS-SD553C..S50L Series
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Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 16 - Frequency Characteristics
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
I = 15 00 A
Sine Pulse
1000 A
SD 553 C ..S50L Se rie s
T = 125 °C; V > 100V
J
FM
r
0
500
100 0
150 0
200 0
250 0
0 50 100 150 200 250 300
Rate Of Fall O f Forward Current - di/dt (A/µs)
SD 553C ..S50L Series
T = 1 25 °C ; V > 1 00 V
I = 15 00 A
Sine Pu l se
FM
1000 A
500 A
J r
Ma xim um Re ve rse Reco ve ry C h arg e - Q rr ( µC )
0
100
200
300
400
500
600
700
800
0 50 100 1 50 200 2 50 300
I = 1500 A
Sine Pulse
FM
1000 A
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
M ax im um R ev erse R ec ov ery Cu rr en t - Irr (A )
SD 5 5 3 C ..S5 0 L S e r ie s
T = 1 2 5 °C ; V > 1 00 V
Jr
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
400
1000
2000
6000
Peak Forward Current (A)
Sinu soid al Puls e
SD55 3C..S50L Series
3000
1500
T = 55°C, V = 1500V
C
RR M
tp
600
VS-SD553C..S50L Series
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Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 20 - Frequency Characteristics
ORDERING INFORMATION TABLE
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Basew idth (µs)
4
10 jou les pe r pulse
6
Tra pez o idal Pul se
Peak Forward Current (A)
T = 125°C, V = 1500V
J
RRM
dv/d t = 1000V/µs
di/dt = 100A/µs
0.8
0.6
SD553C..S50L Series
tp
8
0.4
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95246
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
Tra pezoid a l Pu lse
50 H z
100
200
400
1000
1500
2000
4000
3000
600
T = 55°C, V = 1500V
RRM
6000
Peak Forward Current (A)
SD553C..S50L Series
dv/dt = 1000V/us,
di/dt = 100A/us
C
tp
1
- Diode
- Vishay Semiconductors product
2
- Essential part number
3
- 3 = fast recovery
4
- C = ceramic PUK
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-t
rr code
7
8- L = PUK case B-PUK (DO-200AB)
Device code
51 32 4 6 7 8
SDVS- 55 3 C 45 S50 L
Outline Dimensions
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B-PUK (DO-200AB)
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
53 (2.09) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
26.9 (1.06)
25.4 (1)
C
A
Note:
A = Anode
C = Cathode
Legal Disclaimer Notice
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