PAGE . 1September 03.2010-REV.00
2N7002KFN3
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: DFN 3L Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
M aximum RATINGS a nd Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
P AN JIT RESER VES THE RIGHT T O IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
PARAMETER Symbol Limit Units
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
+20 V
Continuous Drain Current I
D
115 mA
Pulsed Drain Current
1)
I
DM
800 mA
Maximum Power Dissipation T
A
=25
O
C
T
A
=75
O
CP
D
200
150 mW
Operating Junction and Storage Temperature
Range T
J
,T
STG
-55 to + 150
O
C
Juncti on-to Ambient Thermal Resistance(PC B mounte d)
2
R
θJA
883
O
C/W
0.042(1.05)
0.037(0.95)
0.013(0.32)
0.008(0.22)
0.014(0.36)
0.013(0.32)
0.008(0.22)
0.002(0.05) MAX.
0.026(0.65)
0.021(0.55)
0.0 (0.55)
0.047(0.45)
22
0.0 (0.55)
0.047(0.45)
22
0.0 (0.20)
0.004(0.10)
08
0.0 (0.20)14
0.0 (0.20)
0.004(0.10)
08
DFN 3L
DFN 3L
Unit : inch(mm)
Unit :inch(mm)
1
2
3
PAGE . 2September 03.2010-REV.00
2N7002KFN3
ELECTRICAL CHARACTERISTICS
Parameter Symbol Test Condition Min. Typ. Max. Units
Static
Drain-Source Breakdown
Voltage BVDSS VGS=0V, ID=10μA60--V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA1-2.5V
Drain-Source On-State
Resistance RDS(on) VGS=4.5 V, I D=200mA - - 4.0
Ω
Drain-Source On-State
Resistance RDS(on) VGS=10V, I D=500mA - - 3.0
Zero Gate Voltage Drain
Current IDSS VDS=60V, VGS=0V --1μA
Gate Body Le akage IGSS VGS=+20V, VDS=0V - - +10 μA
Forward Transconductance gfS VDS=15V, ID=250mA 100 - - mS
Dynamic
Total Gate Charge QgVDS=15V, ID=200mA
VGS=4.5V --0.8nC
Turn-On Delay Time ton VDD=30 V , RL=150Ω
ID=2 0 0mA , VGEN=10V
RG=10Ω
--20
ns
Turn-Off Delay Time toff --40
Input Capacitance Ciss
VDS=25V, VGS=0V
f=1.0MHZ
--35
pF
Output Capacitance Coss --10
Reverse Transfer
Capacitance Crss --5
Source-Drain Diode
Diode Forward Voltage VSD IS=200mA , VGS=0V - 0.82 1.3 V
Continuous Diode Forward
Current Is---115mA
Pulsed Diode Forward
Current IsM ---800mA
V
DD
V
OUT
V
IN
R
G
R
L
Switching
Test Circuit
Gate Charge
Test Circuit
V
DD
V
GS
R
G
R
L
1mA
PAGE . 3September 03.2010-REV.00
2N7002KFN3
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
012345
V
DS
- Drain-to-Source Voltage (V)
ID- Drain-to-Source Current (A)
V
GS
= 6.0~10V
5.0V
4.0V
3.0V
4.0V
3.0V
5.0V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Source Current (A)
V =10V
DS
V =10V
DS
V =10V
DS
T =25
J
℃T =25
J
℃T =25
J
℃
0
1
2
3
4
5
2345678910
V
GS
- Gate-to-Source Voltage (V)
I
D
=500m A
R - On-Resistance ( )
DS(ON)
W
I =200mA
D
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
I
D
-DrainCurrent(A)
V
GS
=4.5V
V
GS
=10V
R - On-Resistance ( )
DS(ON)
W
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature (oC)
RDS(ON) - On-Resistance(Normalized)
VGS =10V
ID=500mA
PAGE . 4September 03.2010-REV.00
2N7002KFN3
Fig.6 - Gate Charge Waveform
Fig.6 -Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.7 -Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.9 -Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
Fig.10 -Source-Drain Diode Forward Voltage
QgdQgs
Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Q
g
-GateCharge(nC)
V
GS
- Gate-to-Source Voltage (V)
V =10V
I =250mA
DS
D
72
74
76
78
80
82
84
86
88
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
BV
DSS
- Breakdown Voltage (V)
ID = 250uA
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
V
th
- G-S Threshold Voltage (NORMALIZED)
I
D
=250mA
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
V =0V
GS
T =125
J
℃
25
℃
-55
℃
PAGE . 5
September 03.2010-REV.00
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 8K per 7" plastic Reel
0.02
(0.70)
8
0.02
(0.68)
7
0.043
(1.10)
0.017
(0.42)
0.010
(0.26)
0.004
(0.10)
0.024
(0.60)
0.010
(0.25)
DFN 3L
DFN 3L
2N7002KFN3