Surface Mount Zero Bias
Schottky Detector Diodes
Technical Data
HSMS-2850 Series
SOT-23/SOT-143 Package
Lead Code Identification
(top view)
Description
Agilent’s HSMS-285x family of
zero bias Schottky detector
diodes has been designed and
optimized for use in small signal
(Pin <-20 dBm) applications at
frequencies below 1.5 GHz. They
are ideal for RF/ID and RF Tag
applications where primary (DC
bias) power is not available.
Important Note: For detector
applications with input power
levels greater than –20 dBm, use
the HSMS-282x series at frequen-
cies below 4.0 GHz, and the
HSMS-286x series at frequencies
above 4.0 GHz. The HSMS-285x
series IS NOT RECOMMENDED
for these higher power level
applications.
Available in various package
configurations, these detector
diodes provide low cost solutions
to a wide variety of design prob-
lems. Agilent’s manufacturing
techniques assure that when two
diodes are mounted into a single
package, they are taken from
adjacent sites on the wafer,
assuring the highest possible
degree of match.
SOT-323 Package Lead
Code Identification
(top view)
Features
• Surface Mount SOT-23/
SOT-143 Packages
• Miniature SOT-323 and
SOT-363 Packages
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
• Low Flicker Noise:
-162 dBV/Hz at 100 Hz
• Low FIT (Failure in Time)
Rate*
• Tape and Reel Options
Available
• Matched Diodes for
Consistent Performance
• Better Thermal
Conductivity for Higher
Power Dissipation
* For more information see the Surface
Mount Schottky Reliability Data Sheet.
SOT-363 Package Lead
Code Identification
(top view)
UNCONNECTED
PAIR
#5
SERIES
#2
SINGLE
#0
12
3
12
34
12
3
SERIES
C
SINGLE
B
12
3
12
3
BRIDGE
QUAD
P
UNCONNECTED
TRIO
L
123
654
123
654
Pin Connections and
Package Marking
Notes:
1. Package marking provides orienta-
tion and identification.
2. See “Electrical Specifications” for
appropriate package marking.
PLx
1
2
3
6
5
4
2
SOT-23/SOT-143 DC Electrical Specifications, TC = +25°C, Single Diode
Part Package Maximum Typical
Number Marking Lead Forward Voltage Capacitance
HSMS- Code[1] Code Configuration VF (mV) CT (pF)
2850 P0 0 Single 150 250 0.30
2852 P2 2 Series Pair[2,3]
2855 P5 5 Unconnected Pair[2,3]
Test IF = 0.1 mA IF = 1.0 mA VR = –0.5V to –1.0V
Conditions f = 1 MHz
Notes:
1. Package marking code is in white.
2. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
3. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
RF Electrical Specifications, TC = +25°C, Single Diode
Part Number Typical Tangential Sensitivity Typical Voltage Sensitivity Typical Video
HSMS- TSS (dBm) @ f = 915 MHz γ (mV/µW) @ f = 915 MHz Resistance RV (KΩ)
2850 –57 40 8.0
2852
2855
285B
285C
285L
285P
Test Video Bandwidth = 2 MHz Power in = –40 dBm
Conditions Zero Bias RL = 100 KΩ, Zero Bias Zero Bias
SOT-323/SOT-363 DC Electrical Specifications, TC = +25°C, Single Diode
Part Package Maximum Typical
Number Marking Lead Forward Voltage Capacitance
HSMS- Code[1] Code Configuration VF (mV) CT (pF)
285B P0 B Single[2] 150 250 0.30
285C P2 C Series Pair[2,3]
285L PL L Unconnected Trio
285P PP P Bridge Quad
Test IF = 0.1 mA IF = 1.0 mA VR = 0.5V to –1.0V
Conditions f = 1 MHz
Notes:
1. Package marking code is laser marked.
2. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
3. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5V.
3
Equivalent Linear Circuit Model
HSMS-285x chip SPICE Parameters
Parameter Units HSMS-285x
BVV 3.8
CJ0 pF 0.18
EGeV 0.69
IBV A3 E-4
ISA3 E-6
N 1.06
RSΩ25
PB (VJ) V 0.35
PT (XTI) 2
M 0.5
Absolute Maximum Ratings, TC = +25°C, Single Diode
Symbol Parameter Unit Absolute Maximum[1]
SOT-23/143 SOT-323/363
PIV Peak Inverse Voltage V 2.0 2.0
TJJunction Temperature °C 150 150
TSTG Storage Temperature °C -65 to 150 -65 to 150
TOP Operating Temperature °C -65 to 150 -65 to 150
θjc Thermal Resistance[2] °C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package
pins where contact is made to the circuit board.
ESD WARNING:
Handling Precautions
Should Be Taken To Avoid
Static Discharge.
C
j
R
j
R
S
R
j
= 8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
4
Typical Parameters, Single Diode
Figure 1. Typical Forward Current
vs. Forward Voltage. Figure 2. +25°C Output Voltage vs.
Input Power at Zero Bias. Figure 3. +25°C Expanded Output
Voltage vs. Input Power. See Figure 2.
Figure 4. Output Voltage vs.
Temperature.
I
F
– FORWARD CURRENT (mA)
0
0.01
V
F
– FORWARD VOLTAGE (V)
0.8 1.0
100
1
0.1
0.2 1.8
10
1.4
0.4 0.6 1.2 1.6
VOLTAGE OUT (mV)
-50
0.1
POWER IN (dBm)
-30 -20
10000
10
1
-40 0
100
-10
1000
R
L
= 100 KΩ
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
VOLTAGE OUT (mV)
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30 R
L
= 100 KΩ
915 MHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
OUTPUT VOLTAGE (mV)
0
0.9
TEMPERATURE (°C)
40 50
3.1
2.1
1.5
10 100
2.5
80
20 30 70 9060
1.1
1.3
1.7
1.9
2.3
2.7
2.9
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
FREQUENCY = 2.45 GHz
P
IN
= -40 dBm
R
L
= 100 KΩ
5
Applications Information
Introduction
Agilent’s HSMS-285x family of
Schottky detector diodes has been
developed specifically for low
cost, high volume designs in small
signal (Pin < -20 dBm) applica-
tions at frequencies below
1.5 GHz. At higher frequencies,
the DC biased HSMS-286x family
should be considered.
In large signal power or gain con-
trol applications (Pin> -20 dBm),
the HSMS-282x and HSMS-286x
products should be used. The
HSMS-285x zero bias diode is not
designed for large signal designs.
Schottky Barrier Diode
Characteristics
Stripped of its package, a
Schottky barrier diode chip
consists of a metal-semiconductor
barrier formed by deposition of a
metal layer on a semiconductor.
The most common of several
different types, the passivated
diode, is shown in Figure 5, along
with its equivalent circuit.
Figure 5. Schottky Diode Chip.
RS is the parasitic series
resistance of the diode, the sum of
the bondwire and leadframe
resistance, the resistance of the
bulk layer of silicon, etc. RF
energy coupled into RS is lost as
heat—it does not contribute to
the rectified output of the diode.
CJ is parasitic junction capaci-
tance of the diode, controlled by
the thickness of the epitaxial layer
and the diameter of the Schottky
contact. Rj is the junction
resistance of the diode, a function
of the total current flowing
through it.
8.33 X 10-5 nT
Rj = –––––––––––– = RV – Rs
IS + Ib
0.026
= ––––– at 25°C
IS + Ib
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in °K
IS = saturation current (see
table of SPICE parameters)
Ib = externally applied bias
current in amps
IS is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5 µA for very low
barrier diodes.
The Height of the Schottky
Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
V - IRS
I = IS (exp (––––––) - 1)
0.026
On a semi-log plot (as shown in
the Agilent catalog) the current
graph will be a straight line with
inverse slope 2.3 X 0.026 = 0.060
volts per cycle (until the effect of
RS is seen in a curve that droops
at high current). All Schottky
diode curves have the same slope,
but not necessarily the same value
of current for a given voltage. This
is determined by the saturation
current, IS, and is related to the
barrier height of the diode.
Through the choice of p-type or
n-type silicon, and the selection of
metal, one can tailor the charac-
teristics of a Schottky diode.
Barrier height will be altered, and
at the same time CJ and RS will be
changed. In general, very low
barrier height diodes (with high
values of IS, suitable for zero bias
applications) are realized on
p-type silicon. Such diodes suffer
from higher values of RS than do
the n-type. Thus, p-type diodes are
generally reserved for small signal
detector applications (where very
high values of RV swamp out high
RS) and n-type diodes are used for
mixer applications (where high
L.O. drive levels keep RV low).
Measuring Diode Parameters
The measurement of the five
elements which make up the low
frequency equivalent circuit for a
packaged Schottky diode (see
Figure 6) is a complex task.
Various techniques are used for
each element. The task begins
with the elements of the diode
chip itself.
L
P
R
S
R
V
C
j
C
P
FOR THE HSMS-285x SERIES
C
P
= 0.08 pF
L
P
= 2 nH
C
j
= 0.18 pF
R
S
= 25 Ω
R
V
= 9 KΩ
Figure 6. Equivalent Circuit of a
Schottky Diode.
R
S
R
j
C
j
METAL
SCHOTTKY JUNCTION
PASSIVATION PASSIVATION
N-TYPE OR P-TYPE EPI LAYER
N-TYPE OR P-TYPE SILICON SUBSTRATE
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP EQUIVALENT
CIRCUIT
6
RS is perhaps the easiest to
measure accurately. The V-I curve
is measured for the diode under
forward bias, and the slope of the
curve is taken at some relatively
high value of current (such as
5 mA). This slope is converted
into a resistance Rd.
0.026
RS = Rd – ––––––
If
RV and CJ are very difficult to
measure. Consider the impedance
of CJ = 0.16 pF when measured at
1 MHz — it is approximately
1MΩ. For a well designed zero
bias Schottky, RV is in the range of
5 to 25 KΩ, and it shorts out the
junction capacitance. Moving up
to a higher frequency enables the
measurement of the capacitance,
but it then shorts out the video
resistance. The best measurement
technique is to mount the diode in
series in a 50 Ω microstrip test
circuit and measure its insertion
loss at low power levels (around
-20 dBm) using an HP8753C
network analyzer. The resulting
display will appear as shown in
Figure 7.
INSERTION LOSS (dB)
3
-40
FREQUENCY (MHz)
-10
-25
3000
-20
10 1000100
-35
-30
-15
50 Ω
50 Ω
0.16 pF
50 Ω
50 Ω9 KΩ
Figure 7. Measuring C
J
and R
V
.
At frequencies below 10 MHz, the
video resistance dominates the
loss and can easily be calculated
from it. At frequencies above
300 MHz, the junction capacitance
sets the loss, which plots out as a
straight line when frequency is
plotted on a log scale. Again,
calculation is straightforward.
LP and CP are best measured on
the HP8753C, with the diode
terminating a 50 Ω line on the
input port. The resulting tabula-
tion of S11 can be put into a
microwave linear analysis
program having the five element
equivalent circuit with RV, CJ and
RS fixed. The optimizer can then
adjust the values of LP and CP
until the calculated S11 matches
the measured values. Note that
extreme care must be taken to
de-embed the parasitics of the
50 Ω test fixture.
Detector Circuits
When DC bias is available,
Schottky diode detector circuits
can be used to create low cost RF
and microwave receivers with a
sensitivity of -55 dBm to
-57 dBm.[1] These circuits can take
a variety of forms, but in the most
simple case they appear as shown
in Figure 8. This is the basic
detector circuit used with the
HSMS-285x family of diodes.
In the design of such detector
circuits, the starting point is the
equivalent circuit of the diode, as
shown in Figure 6.
Of interest in the design of the
video portion of the circuit is the
diode’s video impedance—the
other four elements of the equiv-
alent circuit disappear at all
reasonable video frequencies. In
general, the lower the diode’s
video impedance, the better the
design.
VIDEO
OUT
RF
IN Z-MATCH
NETWORK
VIDEO
OUT
Z-MATCH
NETWORK
RF
IN
The situation is somewhat more
complicated in the design of the
RF impedance matching network,
which includes the package
inductance and capacitance
(which can be tuned out), the
series resistance, the junction
capacitance and the video
resistance. Of these five elements
of the diode’s equivalent circuit,
the four parasitics are constants
and the video resistance is a
function of the current flowing
through the diode.
26,000
RV ≈ ––––––
IS + Ib
where
IS = diode saturation current
in µA
Ib = bias current in µA
Saturation current is a function of
the diode’s design,[2] and it is a
constant at a given temperature.
For the HSMS-285x series, it is
typically 3 to 5 µA at 25°C.
Saturation current sets the detec-
tion sensitivity, video resistance
and input RF impedance of the
zero bias Schottky detector diode.
[1] Agilent Application Note 923, Schottky Barrier Diode Video Detectors.
[2] Agilent Application Note 969, An Optimum Zero Bias Schottky Detector Diode.
Figure 8. Basic Detector Circuits.
7
Since no external bias is used
with the HSMS-285x series, a
single transfer curve at any given
frequency is obtained, as shown in
Figure 2.
The most difficult part of the
design of a detector circuit is the
input impedance matching
network. For very broadband
detectors, a shunt 60 Ω resistor
will give good input match, but at
the expense of detection
sensitivity.
When maximum sensitivity is
required over a narrow band of
frequencies, a reactive matching
network is optimum. Such net-
works can be realized in either
lumped or distributed elements,
depending upon frequency, size
constraints and cost limitations,
but certain general design
principals exist for all types.[3]
Design work begins with the RF
impedance of the HSMS-285x
series, which is given in Figure 9.
1 GHz
2
3
4
5
6
0.2 0.6 1 25
Figure 9. RF Impedance of the
HSMS-285x Series at -40 dBm.
915 MHz Detector Circuit
Figure 10 illustrates a simple
impedance matching network for
a 915 MHz detector.
65nH
100 pF
VIDEO
OUT
RF
INPUT
WIDTH = 0.050"
LENGTH = 0.065"
WIDTH = 0.015"
LENGTH = 0.600"
TRANSMISSION LINE
DIMENSIONS ARE FOR
MICROSTRIP ON
0.032" THICK FR-4.
Figure 10. 915 MHz Matching
Network for the HSMS-285x Series
at Zero Bias.
A 65 nH inductor rotates the
impedance of the diode to a point
on the Smith Chart where a shunt
inductor can pull it up to the
center. The short length of 0.065"
wide microstrip line is used to
mount the lead of the diode’s
SOT-323 package. A shorted shunt
stub of length <λ/4 provides the
necessary shunt inductance and
simultaneously provides the
return circuit for the current gen-
erated in the diode. The imped-
ance of this circuit is given in
Figure 11.
FREQUENCY (GHz): 0.9-0.93
Figure 11. Input Impedance.
The input match, expressed in
terms of return loss, is given in
Figure 12.
RETURN LOSS (dB)
0.9
-20
FREQUENCY (GHz)
0.915
0
-10
-15
0.93
-5
Figure 12. Input Return Loss.
As can be seen, the band over
which a good match is achieved is
more than adequate for 915 MHz
RFID applications.
Voltage Doublers
To this point, we have restricted
our discussion to single diode
detectors. A glance at Figure 8,
however, will lead to the sugges-
tion that the two types of single
diode detectors be combined into
a two diode voltage doubler[4]
(known also as a full wave recti-
fier). Such a detector is shown in
Figure 13.
VIDEO OUT
Z-MATCH
NETWORK
RF IN
Figure 13. Voltage Doubler Circuit.
Such a circuit offers several
advantages. First the voltage
outputs of two diodes are added
in series, increasing the overall
value of voltage sensitivity for the
network (compared to a single
diode detector). Second, the RF
impedances of the two diodes are
added in parallel, making the job
of reactive matching a bit easier.
[3] Agilent Application Note 963, Impedance Matching Techniques for Mixers and Detectors.
[4] Agilent Application Note 956-4, Schottky Diode Voltage Doubler.
[5] Agilent Application Note 965-3, Flicker Noise in Schottky Diodes.
8
Such a circuit can easily be
realized using the two series di-
odes in the HSMS-285C.
Flicker Noise
Reference to Figure 5 will show
that there is a junction of metal,
silicon, and passivation around
the rim of the Schottky contact. It
is in this three-way junction that
flicker noise[5] is generated. This
noise can severely reduce the
sensitivity of a crystal video
receiver utilizing a Schottky
detector circuit if the video
frequency is below the noise
corner. Flicker noise can be
substantially reduced by the
elimination of passivation, but
such diodes cannot be mounted in
non-hermetic packages. p-type
silicon Schottky diodes have the
least flicker noise at a given value
of external bias (compared to
n-type silicon or GaAs). At zero
bias, such diodes can have
extremely low values of flicker
noise. For the HSMS-285x series,
the noise temperature ratio is
given in Figure 14.
NOISE TEMPERATURE RATIO (dB)
FREQUENCY (Hz)
15
10
5
0
-510 100 1000 10000 100000
Figure 14. Typical Noise Temperature
Ratio.
Noise temperature ratio is the
quotient of the diode’s noise
power (expressed in dBV/Hz) di-
vided by the noise power of an
ideal resistor of resistance R = RV.
For an ideal resistor R, at 300°K,
the noise voltage can be com-
puted from
v = 1.287 X 10-10 √R volts/Hz
which can be expressed as
20 log10 v dBV/Hz
Thus, for a diode with RV = 9 KΩ,
the noise voltage is 12.2 nV/Hz or
-158 dBV/Hz. On the graph of
Figure 14, -158 dBV/Hz would
replace the zero on the vertical
scale to convert the chart to one
of absolute noise voltage vs.
frequency.
Diode Burnout
Any Schottky junction, be it an RF
diode or the gate of a MESFET, is
relatively delicate and can be
burned out with excessive RF
power. Many crystal video receiv-
ers used in RFID (tag) applica-
tions find themselves in poorly
controlled environments where
high power sources may be
present. Examples are the areas
around airport and FAA radars,
nearby ham radio operators, the
vicinity of a broadcast band trans-
mitter, etc. In such environments,
the Schottky diodes of the
receiver can be protected by a de-
vice known as a limiter diode.[6]
Formerly available only in radar
warning receivers and other high
cost electronic warfare applica-
tions, these diodes have been
adapted to commercial and
consumer circuits.
Agilent offers a complete line of
surface mountable PIN limiter
diodes. Most notably, our
HSMP-4820 (SOT-23) can act as a
very fast (nanosecond) power-
sensitive switch when placed
between the antenna and the
Schottky diode, shorting out the
RF circuit temporarily and
reflecting the excessive RF energy
back out the antenna.
Assembly Instructions
SOT-323 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-323 (SC-70)
package is shown in Figure 15
(dimensions are in inches). This
layout provides ample allowance
for package placement by auto-
mated assembly equipment
without adding parasitics that
could impair the performance.
Figure 16 shows the pad layout
for the six-lead SOT-363.
0.026
0.035
0.07
0.016
Figure 15. PCB Pad Layout
(dimensions in inches).
0.026
0.075
0.016
0.035
Figure 16. PCB Pad Layout
(dimensions in inches).
[6] Agilent Application Note 1050, Low Cost, Surface Mount Power Limiters.
9
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT
packages, will reach solder
reflow temperatures faster than
those with a greater mass.
Agilent’s diodes have been
qualified to the time-temperature
profile shown in Figure 17. This
profile is representative of an IR
reflow type of surface mount
assembly process.
TIME (seconds)
T
MAX
TEMPERATURE (°C)
0
0
50
100
150
200
250
60
Preheat
Zone Cool Down
Zone
Reflow
Zone
120 180 240 300
Figure 17. Surface Mount Assembly Profile.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evapo-
rating solvents from the solder
paste. The reflow zone briefly
elevates the temperature suffi-
ciently to produce a reflow of the
solder.
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of the board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 235°C.
These parameters are typical for a
surface mount assembly process
for Agilent diodes. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
10
Outline 143 (SOT-143)
Package Dimensions
Outline 23 (SOT-23)
3
12
X X X
PACKAGE
MARKING
CODE (XX)
DATE CODE (X)
SIDE VIEW
TOP VIEW
END VIEW
THESE DIMENSIONS FOR HSMS-280X AND -281X FAMILIES ONLY.
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.02 (0.040)
0.89 (0.035)
1.03 (0.041)
0.89 (0.035)
0.60 (0.024)
0.45 (0.018)
1.40 (0.055)
1.20 (0.047) 2.65 (0.104)
2.10 (0.083)
3.06 (0.120)
2.80 (0.110)
2.04 (0.080)
1.78 (0.070)
2.05 (0.080)
1.78 (0.070)
1.04 (0.041)
0.85 (0.033)
0.152 (0.006)
0.086 (0.003)
0.180 (0.007)
0.085 (0.003)
0.10 (0.004)
0.013 (0.0005) 0.69 (0.027)
0.45 (0.018)
0.54 (0.021)
0.37 (0.015)
*
*
*
*
0.69 (0.027)
0.45 (0.018)
1.40 (0.055)
1.20 (0.047) 2.65 (0.104)
2.10 (0.083)
0.60 (0.024)
0.45 (0.018) 0.54 (0.021)
0.37 (0.015)
0.10 (0.004)
0.013 (0.0005)
1.04 (0.041)
0.85 (0.033)
0.92 (0.036)
0.78 (0.031)
2.04 (0.080)
1.78 (0.070)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.15 (0.006)
0.09 (0.003)
3.06 (0.120)
2.80 (0.110)
PACKAGE
MARKING
CODE (XX)
BE
CE
X X X
DATE CODE (X)
11
Outline SOT-323
(SC-70, 3 Lead)
Outline SOT-363
(SC-70, 6 Lead)
2.20 (0.087)
2.00 (0.079) 1.35 (0.053)
1.15 (0.045)
1.30 (0.051)
REF.
0.650 BSC (0.025)
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.25 (0.010)
0.15 (0.006) 1.00 (0.039)
0.80 (0.031) 0.20 (0.008)
0.10 (0.004)
0.30 (0.012)
0.10 (0.004)
0.30 REF.
10°
0.425 (0.017)
TYP.
DIMENSIONS ARE IN MILLIMETERS (INCHES)
PACKAGE
MARKING
CODE (XX)
X X X
DATE CODE (X)
2.20 (0.087)
2.00 (0.079) 1.35 (0.053)
1.15 (0.045)
1.30 (0.051)
REF.
0.650 BSC (0.025)
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.25 (0.010)
0.15 (0.006)
1.00 (0.039)
0.80 (0.031) 0.20 (0.008)
0.10 (0.004)
0.30 (0.012)
0.10 (0.004)
0.30 REF.
10°
0.425 (0.017)
TYP.
DIMENSIONS ARE IN MILLIMETERS (INCHES)
PACKAGE
MARKING
CODE (XX)
X X X
DATE CODE (X)
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
Obsoletes 5968-5437E, 5968-5908E,
5968-2355E
5968-7457E (11/99)
Device Orientation
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL END VIEW
8 mm
4 mm
TOP VIEW
### ### ### ###
Note: “###” represents Package Marking Code, Date Code.
Part Number Ordering Information
No. of
Part Number Devices Container
HSMS-285x-TR2* 10000 13" Reel
HSMS-285x-TR1* 3000 7" Reel
HSMS-285x-BLK* 100 antistatic bag
where x = 0, 2, 5, B, C, L and P for HSMS-285x.
Tape Dimensions and Product Orientation
For Outline SOT-323 (SC-70 3 Lead)
P
P
0
P
2
FW
C
D
1
D
E
A
0
8° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
5° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t
1
8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.010 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS C
T
t
5.4 ± 0.10
0.062 ± 0.001 0.205 ± 0.004
0.0025 ± 0.00004
COVER TAPE
