STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 m , 80 A, DPAK, DPAK STripFETTM VI DeepGATETM Power MOSFET Features Order codes VDSS RDS(on) max ID STB155N3H6 30 V < 3 m 80 A (1) STD155N3H6 30 V < 3 m 80 A (1) 1. Limited by wire bonding 3 3 1 1 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness DPAK DPAK Application Switching applications Automotive Figure 1. Internal schematic diagram Description D (TAB or 2) These devices are 30 V N-channel Power MOSFETs realized using STs proprietary STripFETTM VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking STB155N3H6 Package DPAK 155N3H6 STD155N3H6 May 2011 Packaging Tape and reel DPAK Doc ID 018793 Rev 2 1/ www.st.com 18 Contents STB155N3H6, STD155N3H6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/ .............................................. 8 Doc ID 018793 Rev 2 STB155N3H6, STD155N3H6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V 20 V Drain current (continuous) at TC = 25 C 80 A Drain current (continuous) at TC = 100 C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 C 110 W Derating factor 0.73 W/C VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) ID IDM (2) PTOT Tstg Tj Storage temperature C -55 to 175 Operating junction temperature C 1. Limited by wire bonding 2. Pulse width limited by safe operating area Table 3. Thermal resistance Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max Rthj-pcb (1) Thermal resistance junction-pcb max DPAK 1.36 35 C/W 50 C/W 1. When mounted on 1 inch 2 oz Cu board Table 4. Symbol Avalanche characteristics Parameters Value Unit IAV Not-repetitive avalanche current 40 A EAS Single pulse avalanche energy (starting TJ = 25 C, ID = IAV, VDD = 22 V) 525 mJ Doc ID 018793 Rev 2 3/ Electrical characteristics 2 STB155N3H6, STD155N3H6 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown Voltage ID = 250 A, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V VDS = 20 V,Tc = 125 C 1 100 A nA IGSS Gate body leakage current (VDS = 0) VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A 2.5 3.0 m Min Typ. Max. Unit V(BR)DSS Table 6. Symbol 4/ Static 30 V 2 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS = 0 - 3650 765 390 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 80 A VGS = 10 V Figure 14 - 62 17 16 - nC nC nC RG Intrinsic gate resistance f = 1 MHz open drain - 1.5 - Doc ID 018793 Rev 2 STB155N3H6, STD155N3H6 Table 7. Symbol Electrical characteristics Switching on/off (inductive load) Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off delay time Fall time Table 8. Symbol Test conditions Min. Typ. Max. Unit VDD = 15 V, ID = 40 A, RG = 4.7 , VGS = 10 V (see Figure 13) - 20 90 - ns ns - 50 20 - ns ns Min. Typ. Max. Unit - 80 320 A A 1.3 V Source drain diode Parameter Test conditions ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 80 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/s, VDD = 24 V, TJ = 150 C (see Figure 15) - trr Qrr IRRM 40 50 2.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% Doc ID 018793 Rev 2 5/ Electrical characteristics STB155N3H6, STD155N3H6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM09149v1 ID (A) ) on D S( O Li per m at ite io d ni by n m this ax a R rea is Tj=175C Tc=25C Single pulse 100 100s 1ms 10 10ms 1 0.1 Figure 4. ID (A) 10 1 VDS(V) Output characteristics AM09150v1 VGS=10V 6V 250 AM09151v1 ID (A) VDS=1V 250 200 200 150 150 5V 100 100 50 50 0 0 Figure 6. 4V 0.5 1.0 1.5 VDS(V) Normalized BVDSS vs temperature AM09152v1 BVDSS (norm) ID=1mA Figure 7. 3.5 1.05 3.0 1.00 2.5 0.95 2.0 0.90 1.5 0.85 1.0 -25 25 75 125 175 TJ(C) 1 2 0.5 0 Doc ID 018793 Rev 2 3 4 5 6 VGS(V) Static drain-source on resistance AM09153v1 RDS(on) (m) 1.10 0.80 -75 6/ 0 0 VGS=10V 20 40 60 80 ID(A) STB155N3H6, STD155N3H6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09154v1 VGS (V) Capacitance variations AM09155v1 C (pF) VDD=15V ID=8A 12 Ciss 10 8 1000 6 Coss 4 Crss 2 0 0 10 20 40 30 50 60 70 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM09156v1 VGS(th) (norm) 100 0 ID=250A 15 10 25 VDS(V) 20 Figure 11. Normalized on resistance vs temperature AM09157v1 RDS(on) (norm) 1.8 1.2 5 VGS=10V ID=40A 1.6 1.0 1.4 1.2 0.8 1.0 0.6 0.8 0.6 0.4 0.4 0.2 0 -75 -25 25 75 175 TJ(C) 125 0.2 0 -75 -25 25 75 125 175 TJ(C) Figure 12. Source-drain diode forward characteristics AM09158v1 VSD (V) TJ=-55C 1.0 0.9 TJ=25C 0.8 0.7 TJ=175C 0.6 0.5 0.4 0 20 40 60 80 ISD(A) Doc ID 018793 Rev 2 7/ Test circuits 3 STB155N3H6, STD155N3H6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/ 0 10% Doc ID 018793 Rev 2 AM01473v1 STB155N3H6, STD155N3H6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 018793 Rev 2 9/ Package mechanical data Table 9. STB155N3H6, STD155N3H6 DPAK (TO-263) mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/ Typ. 0.4 0 8 Doc ID 018793 Rev 2 STB155N3H6, STD155N3H6 Package mechanical data Figure 19. DPAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint Figure 20. DPAK (TO-263) drawing 0079457_R a. All dimension are in millimeters Doc ID 018793 Rev 2 11/ Package mechanical data Table 10. STB155N3H6, STD155N3H6 DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0 8 Figure 21. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 b. All dimension are in millimeters 12/ Doc ID 018793 Rev 2 AM08850v1 STB155N3H6, STD155N3H6 Package mechanical data Figure 22. DPAK (TO-252) drawing 0068772_H Doc ID 018793 Rev 2 13/ Packaging mechanical data 5 STB155N3H6, STD155N3H6 Packaging mechanical data Table 11. DPAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 14/ Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 018793 Rev 2 Max. 330 13.2 26.4 30.4 STB155N3H6, STD155N3H6 Table 12. Packaging mechanical data DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 018793 Rev 2 18.4 22.4 15/ Packaging mechanical data STB155N3H6, STD155N3H6 Figure 23. Tape for DPAK (TO-263) and DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 24. Reel for DPAK (TO-263) and DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/ Doc ID 018793 Rev 2 STB155N3H6, STD155N3H6 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 03-May-2011 1 First release. 11-May-2011 2 Document status promoted from preliminary data to datasheet. Doc ID 018793 Rev 2 17/ STB155N3H6, STD155N3H6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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