May 2011 Doc ID 018793 Rev 2 1/
18
STB155N3H6
STD155N3H6
N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
■RDS(on) * Qg industry benchmark
■Extremely low on-resistance RDS(on)
■High avalanche ruggedness
Application
■Switching applications
■Automotive
Description
These devices are 30 V N-channel Power
MOSFETs realized using ST`s proprietary
STripFET™ VI technology. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Figure 1. Internal schematic diagram
Order codes VDSS RDS(on) max ID
STB155N3H6 30 V < 3 mΩ80 A (1)
1. Limited by wire bonding
STD155N3H6 30 V < 3 mΩ80 A (1)
DPAK
1
3
1
3
D²PAK
AM01474v1
D (TAB or 2)
G(1)
S(3)
Table 1. Device summary
Order codes Marking Package Packaging
STB155N3H6 155N3H6 D²PAK Tape and reel
STD155N3H6 DPAK
www.st.com
Contents STB155N3H6, STD155N3H6
2/ Doc ID 018793 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STB155N3H6, STD155N3H6 Electrical ratings
Doc ID 018793 Rev 2 3/
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Limited by wire bonding
Drain current (continuous) at TC = 25 °C 80 A
ID Drain current (continuous) at TC = 100 °C 80 A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 110 W
Derating factor 0.73 W/°C
Tstg Storage temperature -55 to 175 °C
TjOperating junction temperature °C
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
D²PAK DPAK
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-pcb (1)
1. When mounted on 1 inch² 2 oz Cu board
Thermal resistance junction-pcb max 35 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameters Value Unit
IAV Not-repetitive avalanche current 40 A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV, VDD = 22 V) 525 mJ
Electrical characteristics STB155N3H6, STD155N3H6
4/ Doc ID 018793 Rev 2
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
Voltage ID = 250 µA, VGS= 0 30 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 20 V
VDS = 20 V,Tc = 125 °C
1
100
µA
nA
IGSS
Gate body leakage current
(VDS = 0) VGS = ± 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V
RDS(on) Static drain-source on
resistance VGS = 10 V, ID = 40 A 2.5 3.0 mΩ
Table 6. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS = 0 -
3650
765
390
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 15 V, ID = 80 A
VGS = 10 V
Figure 14
-
62
17
16
-
nC
nC
nC
RGIntrinsic gate resistance f = 1 MHz open drain - 1.5 - Ω
STB155N3H6, STD155N3H6 Electrical characteristics
Doc ID 018793 Rev 2 5/
Table 7. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
-20
90 -ns
ns
td(off)
tf
Turn-off delay time
Fall time -50
20 -ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -80
320
A
A
VSD(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 24 V, TJ = 150 °C
(see Figure 15)
-
40
50
2.5
ns
nC
A
Electrical characteristics STB155N3H6, STD155N3H6
6/ Doc ID 018793 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
I
D
100
10
1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
AM09149v1
I
D
150
100
50
000.5 V
DS
(V)
1.5
(A)
1.0
200
250
5V
6V
4V
V
GS
=10V
AM09150v1
I
D
150
100
50
002V
GS
(V)
4
(A)
135
200
250
6
V
DS
=1V
AM09151v1
BV
DSS
-75 T
J
(°C)
(norm)
-25 75
25 125
0.80
0.85
0.90
1.00
1.05
1.10
175
0.95
I
D
=1mA
AM09152v1
R
DS(on)
2.0
1.5
1.0
0.5040 I
D
(A)
(mΩ)
20 60
2.5
3.0
3.5
V
GS
=10V
80
AM09153v1
STB155N3H6, STD155N3H6 Electrical characteristics
Doc ID 018793 Rev 2 7/
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
V
GS
6
4
2
0030Q
g
(nC)
(V)
60
8
40 50
10
V
DD
=15V
I
D
=8A
70
12
20
10
AM09154v1
C
1000
010 V
DS
(V)
(pF)
515
Ciss
Coss
Crss
100 20 25
AM09155v1
V
GS(th)
0.6
0.4
0.2
0
-75 T
J
(°C)
(norm)
-25
0.8
75
25 125
1.0
1.2
I
D
=250µA
175
AM09156v1
R
DS(on)
0.6
0.4
0.2
0
-75 T
J
(°C)
(norm)
-25 75
25 175
125
1.2
1.0
0.8
1.8
1.6
1.4
I
D
=40A
V
GS
=10V
AM09157v1
V
SD
040 I
SD
(A)
(V)
20 60 80
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
J
=-55°C
T
J
=175°C
T
J
=25°C
AM09158v1
Test circuits STB155N3H6, STD155N3H6
8/ Doc ID 018793 Rev 2
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STB155N3H6, STD155N3H6 Package mechanical data
Doc ID 018793 Rev 2 9/
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Package mechanical data STB155N3H6, STD155N3H6
10/ Doc ID 018793 Rev 2
Table 9. D²PAK (TO-263) mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
STB155N3H6, STD155N3H6 Package mechanical data
Doc ID 018793 Rev 2 11/
Figure 19. D²PAK footprint(a)
Figure 20. D²PAK (TO-263) drawing
a. All dimension are in millimeters
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
0079457_R
Package mechanical data STB155N3H6, STD155N3H6
12/ Doc ID 018793 Rev 2
Figure 21. DPAK footprint(b)
Table 10. DPAK (TO-252) mechanical data
Dim.
mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L 1 1.50
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0° 8°
b. All dimension are in millimeters
6.7
1.6
1.6
2.3
2.3
6.7 1.83
AM08850v1
STB155N3H6, STD155N3H6 Package mechanical data
Doc ID 018793 Rev 2 13/
Figure 22. DPAK (TO-252) drawing
0068772_H
Packaging mechanical data STB155N3H6, STD155N3H6
14/ Doc ID 018793 Rev 2
5 Packaging mechanical data
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
STB155N3H6, STD155N3H6 Packaging mechanical data
Doc ID 018793 Rev 2 15/
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D1.5 1.6D20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
Packaging mechanical data STB155N3H6, STD155N3H6
16/ Doc ID 018793 Rev 2
Figure 23. Tape for D²PAK (TO-263) and DPAK (TO-252)
Figure 24. Reel for D²PAK (TO-263) and DPAK (TO-252)
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
STB155N3H6, STD155N3H6 Revision history
Doc ID 018793 Rev 2 17/
6 Revision history
Table 13. Document revision history
Date Revision Changes
03-May-2011 1 First release.
11-May-2011 2 Document status promoted from preliminary data to datasheet.
STB155N3H6, STD155N3H6
18/ Doc ID 018793 Rev 2
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