PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET(R) Power MOSFET Features l l l l l l l l l D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. G ID S Description 0.065 -31A D D G Specifically designed for Automotive applications, this Cellular Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. -55V D S G D-Pak AUIRFR5305 D S I-Pak AUIRFU5305 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V ch Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds ch Units -31 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 dh c eh A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient *** Typ. --- --- --- Max. 1.4 50 110 Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 12/06/10 AUIRFR/U5305 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units -55 --- --- -2.0 8.0 --- --- --- --- --- -0.034 --- --- --- --- --- --- --- --- --- 0.065 -4.0 --- -25 -250 100 -100 V V/C V S A nA Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1mA VGS = -10V, ID = -16A VDS = VGS, ID = -250A VDS = -25V, ID = -16A VDS = -55V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 150C VGS = -20V VGS = 20V f h Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. --- --- --- --- --- --- --- --- --- --- 14 66 39 63 63 13 29 --- --- --- --- Units nC ns --- 4.5 --- --- 7.5 --- --- --- --- 1200 520 250 --- --- --- pF Min. Typ. Max. Units nH Conditions ID = -16A VDS = -44V VGS = -10V See Fig.6 and 13 VDD = -28V ID = -16A RG = 6.8 RD = 1.6 See Fig.10 fh fh Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = -25V = 1.0MHz,see Fig.5 D G S h Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge c Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) VDD = -25V, starting TJ = 25C, L = 2.1mH RG = 25, IAS = -16A. (See Figure 12) ISD -16A, di/dt -280A/s, VDD V(BR)DSS, --- --- -31 --- --- -110 --- --- --- --- 71 170 -1.3 110 250 A V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = 100A/s f fh Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRF5305 data and test conditions. TJ 175C * *When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. *** Uses typical socket mount. 2 www.irf.com AUIRFR/U5305 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. MSL1 D PAK I-PAK N/A Class M2 (200V) ( per AEC-Q101-002) ESD Human Body Model (per AEC-Q101-001) Charged Device Model RoHS Compliant Class H1B (1000V) Class C5 (1125V) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFR/U5305 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 100 10 -4.5V 100 20s PULSE WIDTH Tc = 25C A 1 0.1 1 10 10 -4.5V 1 0.1 100 Fig 1. Typical Output Characteristics 2.0 4 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25C TJ = 175C 10 4 5 6 7 8 9 10 10 A 100 Fig 2. Typical Output Characteristics 100 V DS = -25V 20s PULSE WIDTH 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH TC = 175C A I D = -27A 1.5 1.0 0.5 V GS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFR/U5305 C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) 2500 Coss 1500 1000 Crss 500 0 1 10 100 I D = -16A V DS = -44V V DS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 -VDS , Drain-to-Source Voltage (V) 20 30 40 50 A 60 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -ID , Drain Current (A) -ISD , Reverse Drain Current (A) 10 100 TJ = 175C TJ = 25C VGS = 0V 10 0.4 0.8 1.2 1.6 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 2.0 100 100s 10 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 A 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFR/U5305 35 -ID , Drain Current (A) RD VDS 30 VGS 25 D.U.T. RG - + 20 VDD -10V 15 Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 0 25 50 75 100 125 150 TC , Case Temperature ( C) 175 td(on) tr t d(off) tf VGS 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFR/U5305 -20V + - D.U.T RG IAS tp DRIVER VDD A 0.01 15V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) L VDS 700 TOP 600 BOTTOM 500 400 300 200 100 0 VDD = -25V 25 I AS ID -6.6A -11A -16A 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F -10V QGS D.U.T. QGD VGS VG -3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com +VDS ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRFR/U5305 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + ** RG + * dv/dt controlled by R G * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS* - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive Period P.W. D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS 8 www.irf.com AUIRFR/U5305 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Part Number AUFR5305 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFR/U5305 I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number AUFU5305 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRFR/U5305 D-Pak (TO-252AA) Tape & Reel Information TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. www.irf.com 11 AUIRFR/U5305 Ordering Information Base part Package Type AUIRFR5305 DPak AUIRFU5305 IPak 12 Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Quantity 75 2000 3000 3000 75 Complete Part Number AUIRFR5305 AUIRFR5305TR AUIRF5305TRL AUIRF5305TRR AUIRFU5305 www.irf.com AUIRFR/U5305 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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