VG111 Product Information 1.7 - 2.7 GHz Variable Gain Amplifier Applications * Xmit & Rcv AGC circuitry for mobile infrastructure GND GND GND 5 GND Gain Ctrl 6 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 17 18 19 20 21 GND 16 GND 15 GND 22 GND GND Superior thermal design allows the product to have a minimum MTTF rating of 1000 years at a mounting temperature of +85 C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surfacemount assembly. Specifications (1) 7 GND 8 GND The +22 dBm output compression point and +39.5 dBm output intercept point of the amplifier are maintained over the entire attenuation range, making the VG111 ideal for use in transmitter and receiver AGC circuits and as a variable gain stage following an LNA in high dynamic range receiver front ends. GND The VG111 is a 1.7-2.7GHz high dynamic range variable gain amplifier (VGA) packaged in a low profile Pb-free / RoHS-compliant surface-mount leadless package that measures 6 x 6 mm square. GND 1.7 - 2.7 GHz bandwidth 26.6 dB Attenuation Range +39.5 dBm Output IP3 +22 dBm P1dB Constant IP3 & P1dB over attenuation range * Single voltage supply * Pb-free 6mm 28-pin QFN package * MTTF > 1000 years * * * * * Functional Diagram GND Product Description GND Product Features Typical Performance Parameter Unit Min Typ Max Parameter Operational Bandwidth Test Frequency (1) Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure at min. attenuation Gain Variation Range (3) Group Delay Supply Voltage Amplifier Current, Pin 25 Gain Control Voltage, VCTRL Gain Control Current, VcTRL=4.5V MHz MHz dB dB dB dBm dBm dB dB ns V mA V mA Frequency (1) Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3(2) Noise Figure at min. attenuation Gain Variation Range Supply Voltage Amplifier Current, Pin25 1700 12 +37 23.5 120 0 2700 1900 14 12 11 +22 +39.5 4.3 26.6 0.6 +5 150 32.5 Units Typical MHz dB dB dB dBm dBm dB dB V mA 1900 2140 2600 14 13.3 8.1 12 14 6.8 11 14 10.5 +22 +22 +21 +39.5 +39.5 +39.5 4.3 4.5 26.6 26.6 33.6 +5 150 180 4.5 20 1. Test conditions unless otherwise noted: 25C, Vdd = +5 V in a tuned application circuit. Vctrl is the control voltage through a BJT transistor and a 100 dropping resistor as shown in the same application circuit. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 1.9 GHz. Absolute Maximum Rating Parameter Rating Storage Temperature Amplifier Supply Voltage (pin 25) Pin 5 (Gain Control) Current RF Input Power (continuous) Junction Temperature, Tj Thermal Resistance, Rth -55 to +125 C +6 V 30 mA +12 dBm +160 C 59 C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description VG111-F 1.7-2.7GHz Variable Gain Amplifier VG111-PCB1900 VG111-PCB2100 1.8 - 2.0 GHz Fully Assembled Application Board 2.0 - 2.2 GHz Fully Assembled Application Board (lead-free/RoHS-compliant QFN package) Standard T/R size = 500 pieces on a 7" reel. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 1 of 7 January 2009 VG111 Product Information 1.7 - 2.7 GHz Variable Gain Amplifier Application Circuit: 1.8 - 2.0 GHz (VG111-PCB1900) Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness Ref. Des. C1, C7 C2, C5 C3, C4 C6 L1, L2 R1 R2 Q1 U1 * The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. * Components shown in the silkscreen but not on the schematic are not used for this circuit. * Distances are shown from the edge-to-edge for the land pattern. 45 OIP3 vs. Attenuation Setting frequency = 1900, 1901 MHz, +10 dBm/tone, +25 C 40 40 35 35 -50 0dB Attn 2.5dB Attn 5dB Attn 10dB Attn 30 +25C 25 -4 0 -40C 4 8 Output Power (dBm) +85C 12 -70 25 16 0 2 4 6 Attenuation (dB) Gain vs. Pin 5 Attn. Control Current 20 15 0603 0603 0603 0603 0603 SOT-23 QFN 6x6 1960 MHz, IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW, 25C -40 -60 30 Size 0603 ACPR vs. Channel Power OIP3 vs. Output Power frequency = 1900, 1901 MHz, 0dB Atten. 45 Bill of Materials Description 47 pF Chip Capacitor Do Not Place 0.01 F Chip Capacitor 0.5 pF Chip Capacitor 22 nH Chip Inductor 100 Chip Resistor 2.2 Chip Resistor MMBT2222 Motorola Transistor VG111 Variable Gain Amplifier 8 10 10 11 12 13 14 15 16 Output Channel Power (dBm) Normalized Gain vs. Pin 5 Control Current 35 +25C -40C +85C +25C 30 10 25 5 0 20 -40C +85C 15 -5 10 -10 -15 5 -20 0 0 5 10 15 20 Pin 5 Attenuation Control Current (mA) 25 0.1 1.0 10.0 100.0 Pin 5 Attenuation Control Current (mA) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 7 January 2009 VG111 Product Information 1.7 - 2.7 GHz Variable Gain Amplifier VG111-PCB1900 Application Circuit Performance (cont'd) S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency Vctrl=0V (Minimum attenuation) Vctrl=0V (Minimum attenuation) Vctrl=0V (Minimum attenuation) 0 15 0 -40C 14 +25C -40C +85C -5 -5 -10 -10 -15 -15 +25C +85C 13 12 11 -40C +25C +85C 10 1700 -20 1750 1800 1850 1900 1950 2000 -20 1700 1750 Frequency (MHz) 1800 1850 1900 1950 2000 1700 1750 S21 vs. Frequency vs. Attenuation Setting 10 -10 0 dB Atten 5 dB Atten 10 dB Atten 15 dB Atten 20 dB Atten 25 dB Atten 1700 10 dB Atten 15 dB Atten 20 dB Atten 25 dB Atten 1750 1800 1850 1900 1950 -10 -15 -15 -20 -20 -25 -25 -30 2000 0 dB Atten 10 dB Atten 20 dB Atten 1750 1800 1850 1900 1950 1700 1750 1800 8 N F (d B ) 24 22 20 18 2000 6 4 2 -40C +85C 16 1960 1950 Vctrl=0V (Minimum attenuation) 10 Frequency (MHz) 1900 Noise Figure vs. Frequency 26 1920 1850 Frequency (MHz) P1dB vs. Frequency Vctrl=0V (Minimum attenuation) 1880 2000 Frequency (MHz) +25C 5 dB Atten 15 dB Atten 25 dB Atten -30 1700 Frequency (MHz) -40C 2000 -5 -10 5 dB Atten 1950 0 -5 0 dB Atten 1900 S22 vs. Frequency vs. Attenuation Setting 0 0 1850 Frequency (MHz) S11 vs. Frequency vs. Attenuation Setting 20 -20 1800 Frequency (MHz) 2000 0 1700 1750 1800 +25C 1850 1900 +85C 1950 2000 Frequency (MHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 7 January 2009 VG111 Product Information 1.7 - 2.7 GHz Variable Gain Amplifier Application Circuit: 2.0 - 2.2 GHz (VG111-PCB2100) Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness Ref. Des. C1, C7 C2 C3, C4 C5 C6 L1, L2 R1 R2 Q1 U1 * The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. * Components shown in the silkscreen but not on the schematic are not used for this circuit. * Distances are shown from the edge-to-edge for the land pattern. OIP3 vs. Output Power frequency = 2140, 2141 MHz, +10 dBm/tone, +25 C 45 40 -45 35 35 -50 +25C -4 0 -40C 4 8 Output Power (dBm) +85C 12 -60 25 16 0 2 4 6 Attenuation (dB) Gain vs. Pin 5 Attn. Control Current 20 15 0dB Attn 2.5dB Attn 5dB Attn 10dB Attn -55 30 25 0603 0603 0603 SOT-23 QFN 6x6 2140 MHz, 3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset, 25C -40 40 30 Size 0603 0603 0603 0603 ACPR vs. Channel Power OIP3 vs. Attenuation frequency = 2140, 2141 MHz, 0dB Atten. 45 Bill of Materials Description 47 pF Chip Capacitor 0.2 pF Chip Capacitor 0.01 F Chip Capacitor 0.6 pF Chip Capacitor Do Not Place 22 nH Chip Inductor 100 Chip Resistor 2.2 Chip Resistor MMBT2222 Motorola Transistor VG111 Variable Gain Amplifier 8 10 11 12 13 14 15 Output Channel Power (dBm) Normalized Gain vs. Pin 5 Control Current 35 +25C -40C +85C +25C 30 10 25 5 0 20 -40C +85C 15 -5 10 -10 -15 5 -20 0 0 5 10 15 20 Pin 5 Attenuation Control Current (mA) 25 0.1 1.0 10.0 100.0 Pin 5 Attenuation Control Current (mA) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 7 January 2009 VG111 Product Information 1.7 - 2.7 GHz Variable Gain Amplifier VG111-PCB2100 Application Circuit Performance (cont'd) S21 vs. Frequency Vctrl=0V (Minimum attenuation) 15 S11 vs. Frequency S22 vs. Frequency Vctrl=0V (Minimum attenuation) Vctrl=0V (Minimum attenuation) 0 0 -40C 14 +25C -40C +85C -5 -5 -10 -10 -15 -15 +25C +85C 13 12 11 -40C +25C +85C 10 -20 2110 2120 2130 2140 2150 2160 2170 -20 2110 2120 Frequency (MHz) 2130 2140 2150 2160 2170 2110 2120 Frequency (MHz) S21 vs. Frequency vs. Attenuation Setting 20 S11 vs. Frequency vs. Attenuation Setting 10 -10 -20 2110 2130 10 dB Atten 25 dB Atten 2150 2170 0 dB Atten 5 dB Atten 10 dB Atten 15 dB Atten 20 dB Atten 25 dB Atten -5 -15 -20 -20 -25 -25 -30 -30 2110 2130 2150 2170 0 dB Atten 10 dB Atten 5 dB Atten 15 dB Atten 20 dB Atten 25 dB Atten 2110 2130 Frequency (MHz) 2170 Noise Figure vs. Frequency Vctrl=0V (Minimum attenuation) 10 22 8 N F (d B ) 24 20 18 6 4 16 2 14 0 2110 10 35 Temperature (C) 2150 Frequency (MHz) P1dB vs. Temperature 2140 MHz, Vctrl=0V (minimum attenuation) -15 2170 -10 -15 Frequency (MHz) -40 2160 S22 vs. Frequency vs. Attenuation Setting -10 5 dB Atten 20 dB Atten 2150 0 -5 0 2140 Frequency (MHz) 0 0 dB Atten 15 dB Atten 2130 60 85 -40C 2120 2130 +25C 2140 2150 +85C 2160 2170 Frequency (MHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 5 of 7 January 2009 VG111 Product Information 1.7 - 2.7 GHz Variable Gain Amplifier Application Circuit: 2.4 - 2.7 GHz Reference Design Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness * The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. * Components shown in the silkscreen but not on the schematic are not used for this circuit. * Distances are shown from the edge-to-edge for the land pattern. Ref. Des. C1, C7 C8 C3, C4 C9 C5, C6 L1, L2 R1 R2 Q1 U1 Vctrl = 0, Min. Attenuation Vctrl=4V -10 40 35 -20 30 -30 25 2 4 6 Output Power / tone (dBm) 8 -40 2300 8 5 2400 2500 2600 Frequency (MHz) 2700 6 Gain S11 S22 0 4 -5 2 -10 0 2300 2400 2500 2600 Frequency (MHz) R e tu rn L o s s ( d B ) Vctrl=3V 10 Vctrl=2V G a in (d B ) O IP 3 (d B m ) Vctrl=4.5V 0603 0603 0603 SOT-23 QFN 6x6 10 G a in (d B ) 0 Vctrl=0V Size 0603 0603 0603 0603 Measured S-Parameters 10 45 0 Description 39 pF Chip Capacitor 1.2 pF Chip Capacitor 39 pF Chip Capacitor 0.8 pF Chip Capacitor Do Not Place 18 nH Chip Inductor 100 Chip Resistor 2.2 Chip Resistor Transistor VG111 Variable Gain Amplifier Gain vs Frequency vs Control Voltage OIP3 vs Output Power 2.5 GHz, 10 MHz spacing, 0 dB Attenuation 50 Bill of Materials -15 2700 Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 6 of 7 January 2009 VG111 Product Information 1.7 - 2.7 GHz Variable Gain Amplifier Mechanical Information This package is lead-free/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be lasermarked with a "VG111F" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260C convection reflow Standard: JEDEC Standard J-STD-020 GND 5 GND Gain Ctrl 6 GND GND 7 GND GND Functional Pin Layout 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 15 16 17 18 19 20 21 GND GND GND GND GND GND GND 22 GND Function Gain Control RF Input RF Output / DC bias No Connect or GND Ground Pin No 5 11 25 All other pins Backside copper The even numbered pins are hard grounded to the backside paddle internally. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6633 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 7 of 7 January 2009