Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 7 January 2009
VG111
1.7 – 2.7 GHz Variable Gain Amplifier Product Information
Product Features
• 1.7 – 2.7 GHz bandwidth
• 26.6 dB Attenuation Range
• +39.5 dBm Output IP3
• +22 dBm P1dB
• Constant IP3 & P1dB over
attenuation range
• Single voltage supply
• Pb-free 6mm 28-pin QFN package
• MTTF > 1000 years
Applications
• Xmit & Rcv AGC circuitry for
mobile infrastructure
Product Description
The VG111 is a 1.7-2.7GHz high dynamic range variable
gain amplifier (VGA) packaged in a low profile Pb-free /
RoHS-compliant surface-mount leadless package that
measures 6 x 6 mm square.
The +22 dBm output compression point and +39.5 dBm
output intercept point of the amplifier are maintained over
the entire attenuation range, making the VG111 ideal for
use in transmitter and receiver AGC circuits and as a
variable gain stage following an LNA in high dynamic
range receiver front ends.
Superior thermal design allows the product to have a
minimum MTTF rating of 1000 years at a mounting
temperature of +85º C. All devices are 100% RF & DC
tested and packaged on tape and reel for automated surface-
mount assembly.
Functional Diagram
Specifications (1)
Parameter Unit
Min
Typ
Max
Operational Bandwidth MHz 1700 2700
Test Frequency (1) MHz 1900
Gain at min. attenuation dB 12 14
Input Return Loss dB 12
Output Return Loss dB 11
Output P1dB dBm +22
Output IP3 (2) dBm +37 +39.5
Noise Figure at min. attenuation dB 4.3
Gain Variation Range (3) dB 23.5 26.6 32.5
Group Delay ns 0.6
Supply Voltage V +5
Amplifier Current, Pin 25 mA 120 150 180
Gain Control Voltage, VCTRL V 0 4.5
Gain Control Current, VcTRL=4.5V mA 20
1. Test conditions unless otherwise noted: 25ºC, Vdd = +5 V in a tuned application circuit. Vctrl is the
control voltage through a BJT transistor and a 100 Ω dropping resistor as shown in the same
application circuit.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at
1.9 GHz.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -55 to +125 °C
Amplifier Supply Voltage (pin 25) +6 V
Pin 5 (Gain Control) Current 30 mA
RF Input Power (continuous) +12 dBm
Junction Temperature, Tj +160° C
Thermal Resistance, Rth 59 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter Units
Typical
Frequency (1) MHz 1900 2140 2600
Gain at min. attenuation dB 14 13.3 8.1
Input Return Loss dB 12 14 6.8
Output Return Loss dB 11 14 10.5
Output P1dB dBm +22 +22 +21
Output IP3(2) dBm +39.5
+39.5
+39.5
Noise Figure at min. attenuation dB 4.3 4.5
Gain Variation Range dB 26.6 26.6 33.6
Supply Voltage V +5
Amplifier Current, Pin25 mA 150
Ordering Information
Part No. Description
VG111-F 1.7-2.7GHz Variable Gain Amplifier
(lead-free/RoHS-compliant QFN package)
VG111-PCB1900 1.8 – 2.0 GHz Fully Assembled Application Board
VG111-PCB2100 2.0 – 2.2 GHz Fully Assembled Application Board
Standard T/R size = 500 pieces on a 7” reel.
8
9
10
11
12
13
14
28
27
26
25
24
23
22
7
6
5
4
3
2
1
15
16
17
18
19
20
21
GND
GND
GND
RF OUT
GND
GND
GND
GND
GND
GND
RF IN
GND
GND
GND
Variable
Attenuator
Amp
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 7 January 2009
VG111
1.7 – 2.7 GHz Variable Gain Amplifier Product Information
Application Circuit: 1.8 – 2.0 GHz (VG111-PCB1900)
• The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator.
• Components shown in the silkscreen but not on the schematic are not used for this circuit.
• Distances are shown from the edge-to-edge for the land pattern.
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
Bill of Materials
Ref. Des. Description Size
C1, C7 47 pF Chip Capacitor 0603
C2, C5 Do Not Place
C3, C4 0.01 µF Chip Capacitor 0603
C6 0.5 pF Chip Capacitor 0603
L1, L2 22 nH Chip Inductor 0603
R1 100 Ω Chip Resistor 0603
R2 2.2 Ω Chip Resistor 0603
Q1 MMBT2222 Motorola Transistor SOT-23
U1 VG111 Variable Gain Amplifier QFN 6x6
OIP3 vs. Output Power
frequency = 1900, 1901 MHz, 0dB Atten.
25
30
35
40
45
-4 0 4 8 12 16
Output Power (dBm)
+25C
-40C
+85C
OIP3 vs. Attenuation Setting
frequency = 1900, 1901 MHz, +10 dBm/tone, +25° C
25
30
35
40
45
0 2 4 6 8 10
Attenuation (dB)
ACPR vs. Channel Power
1960 MHz, IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW, 25°C
-70
-60
-50
-40
10 11 12 13 14 15 16
Output Channel Power (dBm)
0dB Attn
2.5dB Attn
5dB Attn
10dB Attn
Gain vs. Pin 5 Attn. Control Current
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25
Pin 5 Attenuation Control Current (mA)
+25°C -40°C +85°C
Normalized Gain vs. Pin 5 Control Current
0
5
10
15
20
25
30
35
0.1 1.0 10.0 100.0
Pin 5 Attenuation Control Current (mA)
+25°C -40°C +85°C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 7 January 2009
VG111
1.7 – 2.7 GHz Variable Gain Amplifier Product Information
VG111-PCB1900 Application Circuit Performance (cont’d)
S21 vs. Frequency
Vctrl=0V (Minimum attenuation)
10
11
12
13
14
15
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
-40°C +25°C +85°C
S11 vs. Frequency
Vctrl=0V (Minimum attenuation)
-20
-15
-10
-5
0
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
-40°C +25°C +85°C
S22 vs. Frequency
Vctrl=0V (Minimum attenuation)
-20
-15
-10
-5
0
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
-40°C +25°C +85°C
S21 vs. Frequency vs. Attenuation Setting
-20
-10
0
10
20
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
0 dB Atten 5 dB Atten 10 dB Atten
15 dB Atten 20 dB Atten 25 dB Atten
S11 vs. Frequency vs. Attenuation Setting
-30
-25
-20
-15
-10
-5
0
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
0 dB Atten 5 dB Atten
10 dB Atten 15 dB Atten
20 dB Atten 25 dB Atten
S22 vs. Frequency vs. Attenuation Setting
-30
-25
-20
-15
-10
-5
0
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
0 dB Atten 5 dB Atten
10 dB Atten 15 dB Atten
20 dB Atten 25 dB Atten
P1dB vs. Frequency
Vctrl=0V (Minimum attenuation)
16
18
20
22
24
26
1880 1920 1960 2000
Frequency (MHz)
-40°C +25°C +85°C
Noise Figure vs. Frequency
Vctrl=0V (Minimum attenuation)
0
2
4
6
8
10
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
N F (d B )
-40°C +25°C +85°C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 7 January 2009
VG111
1.7 – 2.7 GHz Variable Gain Amplifier Product Information
Application Circuit: 2.0 – 2.2 GHz (VG111-PCB2100)
• The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator.
• Components shown in the silkscreen but not on the schematic are not used for this circuit.
• Distances are shown from the edge-to-edge for the land pattern.
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
Bill of Materials
Ref. Des. Description Size
C1, C7 47 pF Chip Capacitor 0603
C2 0.2 pF Chip Capacitor 0603
C3, C4 0.01 µF Chip Capacitor 0603
C5 0.6 pF Chip Capacitor 0603
C6 Do Not Place
L1, L2 22 nH Chip Inductor 0603
R1 100 Ω Chip Resistor 0603
R2 2.2 Ω Chip Resistor 0603
Q1 MMBT2222 Motorola Transistor SOT-23
U1 VG111 Variable Gain Amplifier QFN 6x6
OIP3 vs. Output Power
frequency = 2140, 2141 MHz, 0dB Atten.
25
30
35
40
45
-4 0 4 8 12 16
Output Power (dBm)
+25C
-40C
+85C
OIP3 vs. Attenuation
frequency = 2140, 2141 MHz, +10 dBm/tone, +25° C
25
30
35
40
45
0 2 4 6 8 10
Attenuation (dB)
ACPR vs. Channel Power
2140 MHz, 3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset, 25°C
-60
-55
-50
-45
-40
11 12 13 14 15
Output Channel Power (dBm)
0dB Attn
2.5dB Attn
5dB Attn
10dB Attn
Gain vs. Pin 5 Attn. Control Current
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25
Pin 5 Attenuation Control Current (mA)
+25°C -40°C +85°C
Normalized Gain vs. Pin 5 Control Current
0
5
10
15
20
25
30
35
0.1 1.0 10.0 100.0
Pin 5 Attenuation Control Current (mA)
+25°C -40°C +85°C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 5 of 7 January 2009
VG111
1.7 – 2.7 GHz Variable Gain Amplifier Product Information
VG111-PCB2100 Application Circuit Performance (cont’d)
S21 vs. Frequency
Vctrl=0V (Minimum attenuation)
10
11
12
13
14
15
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
-40°C +25°C +85°C
S11 vs. Frequency
Vctrl=0V (Minimum attenuation)
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
-40°C +25°C +85°C
S22 vs. Frequency
Vctrl=0V (Minimum attenuation)
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
-40°C +25°C +85°C
S21 vs. Frequency vs. Attenuation Setting
-20
-10
0
10
20
2110 2130 2150 2170
Frequency (MHz)
0 dB Atten 5 dB Atten 10 dB Atten
15 dB Atten
20 dB Atten
25 dB Atten
S11 vs. Frequency vs. Attenuation Setting
-30
-25
-20
-15
-10
-5
0
2110 2130 2150 2170
Frequency (MHz)
0 dB Atten 5 dB Atten
10 dB Atten 15 dB Atten
20 dB Atten 25 dB Atten
S22 vs. Frequency vs. Attenuation Setting
-30
-25
-20
-15
-10
-5
0
2110 2130 2150 2170
Frequency (MHz)
0 dB Atten 5 dB Atten
10 dB Atten 15 dB Atten
20 dB Atten
25 dB Atten
P1dB vs. Temperature
2140 MHz, Vctrl=0V (minimum attenuation)
14
16
18
20
22
24
-40 -15 10 35 60 85
Temperature (°C)
Noise Figure vs. Frequency
Vctrl=0V (Minimum attenuation)
0
2
4
6
8
10
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
N F (d B )
-40°C +25°C +85°C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 6 of 7 January 2009
VG111
1.7 – 2.7 GHz Variable Gain Amplifier Product Information
Application Circuit: 2.4 – 2.7 GHz Reference Design
• The amplifier is biased through Pin 25 and should be connected directly into a voltage
regulator.
• Components shown in the silkscreen but not on the schematic are not used for this circuit.
• Distances are shown from the edge-to-edge for the land pattern.
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
Bill of Materials
Ref. Des. Description Size
C1, C7 39 pF Chip Capacitor 0603
C8 1.2 pF Chip Capacitor 0603
C3, C4 39 pF Chip Capacitor 0603
C9 0.8 pF Chip Capacitor 0603
C5, C6 Do Not Place
L1, L2 18 nH Chip Inductor 0603
R1 100 Ω Chip Resistor 0603
R2 2.2 Ω Chip Resistor 0603
Q1 Transistor SOT-23
U1 VG111 Variable Gain Amplifier QFN 6x6
OIP3 vs Output Power
2.5 GHz, 10 MHz spacing, 0 dB Attenuation
25
30
35
40
45
50
02468
Output Power / tone (dBm)
O IP 3 (d B m )
Gain vs Frequency vs Control Voltage
-40
-30
-20
-10
0
10
2300 2400 2500 2600 2700
Frequency (MHz)
G a in (d B )
Vctrl=0V Vctrl=4.5V Vctrl=2V
Vctrl=3V Vctrl=4V
Measured S-Parameters
Vctrl = 0, Min. Attenuation
0
2
4
6
8
10
2300 2400 2500 2600 2700
Frequency (MHz)
G a in (d B )
-15
-10
-5
0
5
10
R e tu r n L o s s ( d B )
Gain S11 S22
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 7 of 7 January 2009
VG111
1.7 – 2.7 GHz Variable Gain Amplifier Product Information
Mechanical Information
This package is lead-free/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both
lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Product Marking
The component will be lasermarked with a
“VG111F” designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes ኑ500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ኑ1000V to <2000V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260°C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Function Pin No
Gain Control 5
RF Input 11
RF Output / DC bias 25
No Connect or GND All other pins
Ground Backside copper
The even numbered pins are hard grounded
to the backside paddle internally.
8
9
10
11
12
13
14
28
27
26
25
24
23
22
7
6
5
4
3
2
1
15
16
17
18
19
20
21
GND
GND
GND
RF OUT
GND
GND
GND
GND
GND
GND
RF IN
GND
GND
GND
Variable
Attenuator
Amp