VESD05A1-02V
www.vishay.com Vishay Semiconductors
Rev. 1.5, 04-Jun-2019 1Document Number: 86129
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single ESD-Protection Diode in SOD-523
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
• Compact SOD-523 package
• Low package height < 0.7 mm
• 1-line ESD-protection
• AEC-Q101 qualified available
• Working range 0 V to 5 V
• Low leakage current IR < 0.1 µA
• Surge current 16 A (at 8/20 µs)
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
•e3 - Sn
Tin plated exposed side wall of lead frame
- Soldering can be checked by standard vision inspection
- AOI = Automated Optical Inspection
- No X-ray necessary
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
19344
20278
12
20279
XY
3
3
D
D
3
D
3D Models
ORDERING INFORMATION
PART NUMBER
(EXAMPLE)
AEC-Q101
QUALIFIED
ENVIRONMENTAL AND QUALITY CODE
ORDERING CODE
(EXAMPLE)
RoHS COMPLIANT +
LEAD (Pb)-FREE
TERMINATIONS TIN PLATED
8K PER 7" REEL
(8 mm TAPE)
GREEN MOQ = 8K/BOX
VESD05A1-02V -G 3 -08VESD05A1-02V-G3-08
VESD05A1-02V HG 3 -08VESD05A1-02VHG3-08
PACKAGE DATA
DEVICE NAME PACKAGE
NAME
TYPE
CODE WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL SOLDERING CONDITIONS
VESD05A1-02V SOD-523 . 1.4 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5, 8/20 µs/single shot IPPM 16 A
Peak pulse power Acc. IEC 61000-4-5, 8/20 µs/single shot PPP 192 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature TJ-55 to +150 °C
Storage temperature Tstg -55 to +150 °C
F
VESD05A1-02V
www.vishay.com Vishay Semiconductors
Rev. 1.5, 04-Jun-2019 2Document Number: 86129
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behaviour is bidirectional and
asymmetrical (BiAs).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected Nchannel - - 1 lines
Reverse stand off voltage Max. reverse working voltage VRWM --5V
Reverse voltage at IR = 1 µA VR5--V
Reverse current at VR = 5 V IR- < 0.1 1 µA
Reverse breakdown voltage at IR = 1 mA VBR 66.87.5V
Reverse clamping voltage at IPP = 1 A; 8/20 µs test pulse VC-7.28.5V
at IPP = IPPM = 16 A; 8/20 µs test pulse VC- 10.5 12 V
Forward clamping voltage
at IPP = 0.2 A; 8/20 µs test pulse VF- 0.88 1.1 V
at IPP = 1 A; 8/20 µs test pulse VF-11.5V
at IPP = IPPM = 16 A; 8/20 µs test pulse VF-3.24.5V
Capacitance at VR = 0 V; f = 1 MHz CD- 130 150 pF
at VR = 2.5 V; f = 1 MHz CD-76-pF
L1
20280
12
Ground
BiAs
VESD05A1-02V
www.vishay.com Vishay Semiconductors
Rev. 1.5, 04-Jun-2019 3Document Number: 86129
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - ESD Discharge Current Wave Form acc.
IEC 61000-4-2 (330 / 150 pF)
Fig. 2 - 8/20s Peak Pulse Current Wave Form acc. IEC 61000-4-5
Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Fig. 5 - Typical Reverse Voltage vs. Reverse Current
Fig. 6 - Typical Forward Voltage vs. Forward Current
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
IESD (%)
t (ns)
2nd line
Rise time = 0.7 ns to 1 ns
53
27
20557
10
100
1000
10000
0
20
40
60
80
100
010203040
Axis Title
1st line
2nd line
2nd line
IPPM (%)
t (µs)
2nd line
20 µs to 50 %
8 µs to 100 %
20548
10
100
1000
10000
0
2
4
6
8
10
12
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
VC(V)
IPP (A)
2nd line
Measured according IEC 61000-4-5
(8/20 µs - wave form)
Reverse
Forward
23075
10
100
1000
10000
0
20
40
60
80
100
120
140
0123456
Axis Title
1st line
2nd line
2nd line
CD(pF)
VR(V)
2nd line
f = 1 MHz
23076
0
1
2
3
4
5
6
7
8
1.0E-8 1.0E-7 1.0E-6 1.0E-5 1.0E-4 1.0E-3
2nd line
VR(V)
IR(µA)
2nd line
Tj = 150 °C
Tj = 75 °C
Tj = 25 °C
23077
10
100
1000
10000
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0E-7 1.0E-6 1.0E-5 1.0E-4 1.0E-3 1.0E-2
Axis Title
1st line
2nd line
2nd line
VF(V)
IF(A)
2nd line
Tj = 150 °C
Tj = 75 °C
Tj = 25 °C
23078
VESD05A1-02V
www.vishay.com Vishay Semiconductors
Rev. 1.5, 04-Jun-2019 4Document Number: 86129
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current
PACKAGE DIMENSIONS in millimeters (inches): SOD-523
10
100
1000
10000
0
2
4
6
8
10
12
14
16
18
20
0 20406080
Axis Title
1st line
2nd line
2nd line
VC-TLP (V)
ITLP (A)
2nd line
Transmission line pulse (TLP):
t
p
= 100 ns
Reverse
Forward
foot print recommendation:
Rev. 3 - Date: 27. May 2019
0.5 [0.020]
1.45 [0.057]
0.35 [0.014]
1.3 [0.051]
1.1 [0.043]
0.35 [0.014]
0.18 [0.007]
1.7 [0.067]
1.5 [0.059]
0.2 [0.008]
0.08 [0.003]
0.9 [0.035]
0.7 [0.028]
0.75 [0.029]
0.55 [0.021]
0.1 [0.004] max.
Created - Date: 04. April 2017
0.85 [0.033] min.
Document no.: S8-V-3880.02-003 (4)
23093
VESD05A1-02V
www.vishay.com Vishay Semiconductors
Rev. 1.5, 04-Jun-2019 5Document Number: 86129
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CARRIER TAPE SOD-523
ORIENTATION IN CARRIER TAPE SOD-523
4 ± 0.1
Ø 1.5 ± 0.1
Ø 0.5 ± 0.05
2 ± 0.05
0.5 ± 0.05
0.18 ± 0.02
3.5 ± 0.05
1.75 ± 0.1
1.4 ± 0.1
1.95 ± 0.1
4 ± 0.1 0.73 ± 0.1
0.9 ± 0.1
max. 2°
max. 2°
B
B-B Section
BA
AA-A Section
8
+0.3
-0.1
S8-V-3717.03-005 (4)
05.07.2018
22959
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2019 1Document Number: 91000
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