AON2403 12V P-Channel MOSFET General Description Product Summary The AON2403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-4.5V) -12V -8A VDS RDS(ON) (at VGS =-4.5V) < 21m RDS(ON) (at VGS =-2.5V) < 28m RDS(ON) (at VGS =-1.8V) < 40m RDS(ON) (at VGS =-1.5V) < 54m DFN 2x2B Top View S D Bottom View D D D Pin 1 S D G Pin 1 G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25C Continuous Drain Current G Pulsed Drain Current Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : July 2012 Steady-State A A 2.8 W 1.8 TJ, TSTG Symbol t 10s V -32 PD TA=70C 8 -6 IDM TA=25C Units V -8 ID TA=70C C Maximum -12 RJA www.aosmd.com -55 to 150 Typ 37 66 C Max 45 80 Units C/W C/W Page 1 of 5 AON2403 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -12 -1 TJ=55C -5 Gate-Body leakage current VDS=0V, VGS=8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250A -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -32 VGS=-4.5V, ID=-8A TJ=125C Static Drain-Source On-Resistance nA -0.9 V 16.5 21 19.3 25 A 21.5 28 m VGS=-1.8V, ID=-4A 30 40 m 54 m VGS=-1.5V, ID=-1A 36 33 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-6V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge m VGS=-2.5V, ID=-6A VDS=-5V, ID=-8A Crss A 100 Forward Transconductance Output Capacitance Units -0.6 gFS Coss Max V VDS=-12V, VGS=0V IGSS RDS(ON) Typ -0.6 -1 V -3.5 A 1370 pF 350 pF 258 pF 10 12.7 VGS=-4.5V, VDS=-6V, ID=-8A S 18 nC 1.7 nC Qgd Gate Drain Charge 3.4 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 25 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-4.5V, VDS=-6V, RL=0.75, RGEN=3 70 ns 41.5 ns IF=-8A, dI/dt=100A/s 20.7 Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/s 5.2 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. B. The Power dissipation PD is based on R JA t 10s value and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : July 2012 www.aosmd.com Page 2 of 5 AON2403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 20 -4.5V -2.5V 30 VDS=-5V -3V 15 -2V 20 -ID(A) -ID (A) 25 15 10 10 125C 25C 5 VGS=-1.5V 5 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance 1.3 60 RDS(ON) (m ) 0.5 VGS=-1.5V 40 VGS=-1.8V VGS=-2.5V 20 VGS=-4.5V VGS=-4.5V ID=-8A 1.2 VGS=-2.5V ID=-6A 1.1 17 VGS=-1.8V 5 ID=-4A 1 2 10 VGS=-1.5V ID=-1A 0.9 0.8 0 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 50 ID=-8A 1.0E+01 -IS (A) RDS(ON) (m ) 40 30 40 125C 1.0E+00 1.0E-01 125C 1.0E-02 20 25C 1.0E-03 25C 10 1.0E-04 0 1.0E-05 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : July 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON2403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2400 VDS=-6V ID=-8A 2000 Capacitance (pF) -VGS (Volts) 4 3 2 1600 Ciss 1200 Coss 800 1 400 Crss 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 10s 10s 100s RDS(ON) limited 1ms 10ms 1.0 TJ(Max)=150C TA=25C 0.1 TJ(Max)=150C TA=25C 160 Power (W) -ID (Amps) 12 200 100.0 10.0 2 4 6 8 10 -VDS (Volts) Figure 8: Capacitance Characteristics 17 5 2 10 120 80 DC 40 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 100 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Ambient (Note H) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=80C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : July 2012 www.aosmd.com Page 4 of 5 AON2403 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 0 : July 2012 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5