AON2403
12V P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-4.5V) -8A
R
DS(ON)
(at V
GS
=-4.5V) < 21mΩ
R
DS(ON)
(at V
GS
=-2.5V) < 28mΩ
R
DS(ON)
(at V
GS
=-1.8V) < 40mΩ
R
DS(ON)
(at V
GS
=-1.5V) < 54mΩ
Symbol
The AON2403 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Maximum
Units
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-12V
G
D
S
DFN 2x2B
Top View Bottom View
Pin 1
DD
G
D
D
SD
SPin 1
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Typ Max
V±8Gate-Source Voltage
°C
2.8
Junction and Storage Temperature Range -55 to 150
Power Dissipation
A
P
D
W
T
A
=70°C 1.8
T
A
=25°C I
D
A
T
A
=70°C
Continuous Drain
Current
G
-6
-8
V
Maximum
Units
Parameter
Drain-Source Voltage -12
Pulsed Drain Current
C
-32 A
T
A
=25°C
°C/W
Maximum Junction-to-Ambient
A D
80
Thermal Characteristics Units
Maximum Junction-to-Ambient
°C/W
R
θJA
37
66 45
Parameter
Rev 0 : July 2012
www.aosmd.com Page 1 of 5
AON2403
Symbol Min Typ Max Units
BV
DSS
-12 V
V
DS
=-12V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -0.3 -0.6 -0.9 V
I
D(ON)
-32 A
16.5 21
T
J
=125°C 19.3 25
21.5 28 mΩ
30 40 mΩ
36 54 mΩ
g
FS
33 S
V
SD
-0.6 -1 V
I
S
-3.5 A
C
iss
1370 pF
C
oss
350 pF
C
rss
258 pF
R
g
10 Ω
Q
g
12.7 18 nC
Q
gs
1.7 nC
Q
gd
3.4 nC
t
11
ns
I
S
=-1A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-6V, I
D
=-8A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
DS
=-5V, I
D
=-8A
V
GS
=-1.8V, I
D
=-4A
Forward Transconductance
V
GS
=-2.5V, I
D
=-6A
V
GS
=-1.5V, I
D
=-1A
Drain-Source Breakdown Voltage
I
DSS
Reverse Transfer Capacitance V
GS
=0V, V
DS
=-6V, f=1MHz
SWITCHING PARAMETERS
mΩ
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-8A
µA
V
DS
=V
GS
,
I
D
=-250µA
V
DS
=0V, V
GS
=±8V
R
DS(ON)
Static Drain-Source On-Resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
t
D(on)
11
ns
t
r
25 ns
t
D(off)
70 ns
t
f
41.5 ns
t
rr
20.7 ns
Q
rr
5.2 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=-8A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-On Rise Time
Turn-On DelayTime
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.75Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=-8A, dI/dt=100A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
B. The Power dissipation PDis based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : July 2012 www.aosmd.com Page 2 of 5
AON2403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
0 0.5 1 1.5 2 2.5
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
20
40
60
80
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
0.9
1
1.1
1.2
1.3
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-1.8V
ID=-4A
VGS=-2.5V
ID=-6A
VGS=-1.5V
ID=-1A
25°C
125°C
V
DS
=-5V
VGS=-1.8V
VGS=-4.5V
0
5
10
15
20
25
30
35
0 1 2 3 4 5
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-1.5V
-2V
-4.5V -2.5V
-3V
V
GS
=-2.5V
VGS=-4.5V
ID=-8A
VGS=-1.5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
10
20
30
40
50
02468
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=-8A
25°C
125°C
Rev 0 : July 2012 www.aosmd.com Page 3 of 5
AON2403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
1
2
3
4
5
0 3 6 9 12 15
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
2000
2400
0 2 4 6 8 10 12
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Coss
Crss
VDS=-6V
ID=-8A
TJ(Max)=150°C
TA=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
40
Ambient (Note H)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Operating Area (Note F)
RθJC=80°C/W
Rev 0 : July 2012 www.aosmd.com Page 4 of 5
AON2403
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Id
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
2
E = 1/2 LI
AR
AR
BV
DSS
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Vdd
Vgs
Vgs
Rg
DUT
VDC
Vgs
Id
Vgs
-
+
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
Rev 0 : July 2012
www.aosmd.com
Page 5 of 5