DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF457; BF458; BF459 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF457; BF458; BF459 DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. handbook, halfpage 2 APPLICATIONS * Intended for video output stages in black-and-white and in colour television receivers. 3 1 PINNING PIN DESCRIPTION 1 1 emitter 2 collector, connected to mounting base 3 base Fig.1 2 Top view 3 MAM254 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS TYP. MAX. UNIT open emitter BF457 - - 160 V BF458 - - 250 V - - 300 V BF457 - - 160 V BF458 - - 250 V BF459 - - 300 V - - 300 mA W BF459 VCEO MIN. collector-emitter voltage ICM peak collector current open base Ptot total power dissipation Tmb 90 C - - 6 hFE DC current gain IC = 30 mA; VCE = 10 V 26 - - Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz - - 3.5 pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 100 MHz - 90 - MHz 1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors BF457; BF458; BF459 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BF457 - 160 V BF458 - 250 V - 300 V BF457 - 160 V BF458 - 250 V - 300 V - 5 V BF459 VCEO MIN. collector-emitter voltage open base BF459 VEBO emitter-base voltage open collector IC collector current (DC) - 100 mA ICM peak collector current - 300 mA IBM peak base current - 100 mA Ptot total power dissipation - 6 W Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tmb 90 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient 104 K/W Rth j-mb thermal resistance from junction to mounting base 10 K/W 1996 Dec 09 3 Philips Semiconductors Product specification NPN high-voltage transistors BF457; BF458; BF459 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER TYP. MAX. UNIT IE = 0; VCB = 100 V - - 50 nA IE = 0; VCB = 100 V; Tj = 150 C - - 5 A collector cut-off current BF458 ICBO MIN. collector cut-off current BF457 ICBO CONDITIONS IE = 0; VCB = 200 V - - 50 nA IE = 0; VCB = 200 V; Tj = 150 C - - 5 A collector cut-off current BF459 IE = 0; VCB = 250 V - - 50 nA IE = 0; VCB = 250 V; Tj = 150 C - - 5 A nA IEBO emitter cut-off current IC = 0; VEB = 5 V - - 100 hFE DC current gain IC = 30 mA; VCE = 10 V 26 - - VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 6 mA - - 1 V Cc collector capacitance IE = ie = 0; VCB = 30 V; f = 1 MHz - - 4.5 pF Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz - - 3.5 pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 100 MHz - 90 - MHz 1996 Dec 09 4 Philips Semiconductors Product specification NPN high-voltage transistors BF457; BF458; BF459 PACKAGE OUTLINE 2.7 max handbook, full pagewidth 7.8 max 3.75 3.2 3.0 2.54 max 11.1 max (1) 1.2 15.3 min 1 4.58 2 3 0.88 max 0.5 90 o 2.29 MBC076 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-126; SOT32. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Dec 09 5