ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986- 8120
1517-110M
110 Watts, 40 Volts, 200µs, 10%
Radar 1480 to 1650 MHz
GENERAL DESCRIPTION
The 1517-110M is an internally matched, COMMON BASE transistor capable
of providing 110 Watts of pulsed RF output power at 200 microseconds pulse
width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically
solder-sealed transistor is specifically designed for upper L-Band radar
applications. It utilizes gold metallization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipati on @2 5°C1 350 W
Maximum Voltage and Current
Collector to Base Voltage (BVCES) 70 V
Emitter to Base Voltage (BVEBO) 3 V
Collector Current (IC) 9 A
Maximum Temperatures
Storage T empera ture -65 to +200 °C
Operating Junction Temperature +200 °C
FUNCTIONAL CHARAC TERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output 110 120 150 W
Pg Power Gain 7.3 8.6 dB
ηc Collector Efficiency 40 %
IRL Input Return Loss 9 dB
Pd Pulse Droop
F = 1480-1650 MHz
Vcc = 40 Volts
Pin = 20.5 W
Pulse Width = 200µs
Duty Factor = 10% 0.5 dB
VSWR1 Load Mismatch Tolerance F=1480 MHz, Pin = 20.5 W 3:1
ELECTRICAL CHARACTERISTICS @ 25°C
IEBO Emitter cutoff current VEB = 3 V 10 mA
BVCES Collector to Emitter Breakdown IC = 40 mA 70 V
hFE DC – Current Gain VCE = 5V, Ic = 1A 20
θjc1 Thermal Resistance 0.5 °C/W
NOTES: 1. Pulse condition of 200µsec, 10%
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986- 8120
1517-110M
Performance Curves –
Typical Impedances
IMPEDANCE
Freq(MHz) Zs Zl
1480 4.76 – j 5.08 2.50 – j 7.67
1510 4.78 – j 4.60 2.40 – j 7.40
1560 4.84 – j 4.13 2.31 – j 7.15
1610 4.95 – j 3.69 2.22 – j 6.91
1650 5.10 – j 3.27 2.14 – j 6.68
Pout vs Pin
V
cc=40V, 200us, 10%,
0
25
50
75
10 0
12 5
15 0
17 5
0 5 10 15 20 25 30
Pin ( W )
14 8 0 M Hz 15 6 0 M Hz 16 6 0 M Hz
Series Load I m pedance Vs Frequency
Vcc= 40Volts, Pout = 110W, 200 us, 10%
1.00
1.50
2.00
2.50
3.00
1460 1510 1560 1610 1660
Frequency
Rcl ( Ohms)
-8.00
-7.50
-7.00
-6.50
-6.00
jXcl ( Ohms)
Rl JXl
Series Sopurce Impedance vs Frequency
Vcc = 40 Volts, P o u t = 110W, 200 u s, 10%
3.5
4.0
4.5
5.0
5.5
1410 1460 1510 1560 1610 1660
Frequency
Rin ( Ohms)
-6.0
-5.0
-4.0
-3.0
-2.0
jXin ( Ohms)
Rin jXin
Power Gain and Efficiency vs Frequency
Vcc = 40 V, P out = 110W, 2 00 us, 10%
0
2
4
6
8
10
12
1460 1510 1560 1610 1660
Frequency MHz
Power Gain
0
10
20
30
40
50
Efficiency %
Pgain Efficiency
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986- 8120
1517-110M
BROADBAND TEST CIRCUIT
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986- 8120
1517-110M
Case Outline