TOSHIBA TD62593,594,597,598AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62593AFN, TD62594AFN, TD62597AFN, TD62598AFN 8ch SINGLE DRIVER : COMMON EMITTER The TD62593, 4, 7, 8AFN are comprised of eight NPN Transistor Arrays. Applications include relay, hammer, lamp and display (LED) drivers. FEATURES @ Package Type : SSOP18pin @ High Sustaining Voltage Output : 50V (MIN.) @ Low Saturation Voltage : VcE (sat) = 0.8V SSOP18-P-225-0.65 @lguT =150mA:Inputs Compatible with Various type Weight : 0.09g (Typ.) Logic. TD62593AFN, TD62597AFN : RIN =2.7kQ TTL, 5V CMOS TD62594AFN, TD62598AFN : Riy=10.5kKQ 6~15V PMOS, CMOS PIN CONNECTION (TOP VIEW) TD62593AFN, TD62594AFN TD62597AFN, TD62598AFN Je0384055 SaaS haaae PAAAAAAAA > REET LC} 2] By GIG} i i lb LC} 2] By GIG} i i lb @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability te physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-05-15 1/5TOSHIBA TD62593,594,597,598AFN SCHEMATICS (EACH DRIVER) TD62593AFN, TD62594AFN TD62597AFN, TD62598AFN OUTPUT >t +0 ComMON +__OouTPUT R 1 1 INPUT O2 Wg t x t ing ' 3) | L---T4 --@--4 TD62593AFN Ryy =2.7kQ, TD62597AFN Riy =2.7kQ TD62594AFN Ry = 10.5kQ0, TD62598AFN Ri = 10.5kQ, Note : The input and output parasitic diodes cannot be used as clamp diodes. MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCEO 50 Vv Collector-Base Voltage VcBO 50 Vv Clamp Diode Reverse Voltage | Vp *1 50 Vv Collector Current Ic 200 mA/ch Input Voltage VIN -0.5~30 Vv Power Dissipation PDH *2 0.96 Ww Operating Temperature Topr -40~85 i @ Storage Temperature Tstg -55~150 C x1: Except TD62593AFN, TD62594AFN *2 : On Glass Epoxy PCB (50x50x 1.6mm Cu 40%) RECOMMENDED OPERATING CONDITIONS (Ta = 40~85C) CHARACTERISTIC SYMBOL CONDITION MIN. | TYP. | MAX. | UNIT Collector-Emitter Voltage VCEO Oo; 50; V Collector-Base Voltage VcBO 0; 50; V Collector Current Ic Oo; 150 |mA/ch Clamp Diode Reverse Voltage |Vp *1 7; 50; V Input Voltage VIN Oo; 25 Vv Input Current lIN Oo; 10]; mA TD62593AFN 24| 25 Input Voltage | TD62597AFN (OutputOn) | TD62594AFN_| YIN (ON) V TD62598AFN 70) 25 Power Dissipation Pp *2 _ _ 04) W *1: Except TD62593AFN, TD62594AFN +2: On Glass Epoxy PCB (50x50x 1.6mm Cu 40%) 1998-05-15 2/5TOSHIBA TD62593,594,597,598AFN ELECTRICAL CHARACTERISTICS (Ta = 25C) TEST CHARACTERISTIC SYMBOL | CIR- TEST CONDITION MIN. | TYP. | MAX. | UNIT CUIT Output Leakage Current ICEX 1 |Vcp=50V, Vin =0 10) pA Output Saturation V 5 Ic =10mA, ly =0.4mMA 0.2 V Voltage CE (sat) Ic = 150MA, lin =3.0mA | 0.8 DC Current Transfer Ratio | hfe 2 |Vce=10V, Ic =10mMA 50; TD62593AFN Input TD62597AFN | ; VIN = 2.4V, Ic = 50mA 7 | 7 0.9 5 Current | TD62594aFN | !N (ON) Vin =7.0V. = 50mA ol TD62598AFN INS Once Turn-On Delay ton _ 0.1; Vv =50V, R, = 3300, Turn-Off Delay tOFF 4 | YOUT L 30; | TEST CIRCUIT 1. ICEX 2. hee, VCE (sat) 3. lIN (ON) OPEN OPEN OPEN OPEN aN, | . aN | VCE VIN 'cEx VCE. VCE (sat) VIN (ON) le HRE= Ty 4. ton. torr tr tf INPUT OPEN V. =50V our 720% 90% VIH Rr -3300 50% 50% N PULSE R1 10% 10% x 0 GENERATOR 304s | eo ton torr VOH 50% 50% (Note 1) Pulse Width 504s, Duty Cycle 10% VoL Output Impedance 500, t-=5ns, te= 10ns (Note 2) See below Input Condition Type RIN VIH TD62593AFN, TD62597AFN 00 3V TD62594AFN, TD62598AFN 00 10V (Note 3) CL includes probe and jig capacitance PRECAUTIONS for USING Utmost care is necessary in the design of the output line, Vcc and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. 1998-05-15 3/5TOSHIBA (mA) IN INPUT CURRENT Ic (mA) COLLECTOR CURRENT TD62593AFN ,}D62597AFN lIN 0 4 8 - VIN Ta=25C loyT =25~100mA 12 INPUT VOLTAGE Vin (V) VCE (sat) - Ic 0 0.2 0.4 0.6 16 Ta=25C ImA 700 uA lin = 500 2A 0.8 1.0 1.2 OUTPUT SATURATION VOLTAGE VCE (sat) STATIC CHARACTERISTICS COLLECTOR CURRENT 0.6 04 0.2 BASE CURRENT Ip (mA) 0.7 0.6 0 10 20 COLLECTOR-EMITTER VOLTAGE Ta=25C VCE v) 30 ) 20 14 (mA) IN INPUT CURRENT lout (mA) OUTPUT CURRENT Ww POWER DISSIPATION Pp TD62593,594,597,598AFN TD62594AFN TD62598AFN lin - VIN Ta =25C lout =25~100mA 0 10 20 30 40 50 INPUT VOLTAGE Vin. (V) louT - DUTY CYCLE 200 160 120 80 8ch Active Tj = 120C 40 Ta=85C VIH = VIN (on) MIN. 0 0 20 40 60 80 100 DUTY CYCLE (%) Pp - Ta @ On Glass Epoxy PCB (50x50x1.6mm Cu 40%) 0 50 100 150 AMBIENT TEMPERATURE Ta_ (C) 1998-05-15 4/5TOSHIBA TD62593,594,597,598AFN OUTLINE DRAWING SSOP18-P-225-0.65 Unit : mm 18 10 HHHHAR ABE f nN 4.440.1 | O EEL EHH. 9 O.65TYP 0.24+0.08 a 0.65 Tt sua 0.17+40.07 | | 0.4540.2 Weight : 0.09g (Typ.) 1998-05-15 5/5