Continental Device India Limited Data Sheet Page 1 of 3
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Designed for General purpose Medium Power Amplifier and Switching Circuits.
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
Rating Symbol 2N67142N6714
2N67142N6714
2N6714 2N67152N6715
2N67152N6715
2N6715 2N67162N6716
2N67162N6716
2N6716 Units
Collector-Emitter Voltage VCEO 30 40 60 V
Collector-Base Voltage VCBO 40 50 60 V
Emitter-Base Voltage VEBO - 5.0 - V
Collector Current – Continuous IC- 1.5 - A
Power Dissipation @ Ta=25ºC PD- 850 - mW
Operating And Storage Junction Tj,Tstg -55 to +150 º C
Temperature Range
2N6714
2N6715
2N6716
1 = EMITTER
2 = BASE
3 = COLLECTOR 1 2 3
IS / IECQC 700000
IS / IEC
Q
C 750100
IS/ISO 9002
Lic#
Q
SC/L - 000019 .2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
E B C
TO-237 Plastic Package
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
Continental Device India Limited Data Sheet Page 2 of 3
ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified)
DescriptionDescription
DescriptionDescription
Description SymbolSymbol
SymbolSymbol
Symbol Min.Min.
Min.Min.
Min. Max.Max.
Max.Max.
Max. UnitUnit
UnitUnit
Unit
Collector Cutoff Current
VCB=40V, IE=0 2N67142N6714
2N67142N6714
2N6714 ICBO - 100 nA
VCB=50V, IE=0 2N67152N6715
2N67152N6715
2N6715 - 100 nA
VCB=40V, IE=0 2N67162N6716
2N67162N6716
2N6716 - 100 nA
D.C. Current Gain
IC=10mA, VCE=1V 2N6714/67152N6714/6715
2N6714/67152N6714/6715
2N6714/6715 hFE 55 -
IC=100mA, VCE=1V 2N6714/67152N6714/6715
2N6714/67152N6714/6715
2N6714/6715 60 -
IC=1A, VCE=1V 2N6714/67152N6714/6715
2N6714/67152N6714/6715
2N6714/6715 50 250
IC=50mA, VCE=1V 2N67162N6716
2N67162N6716
2N6716 80 -
IC=250mA, VCE=1V 2N67162N6716
2N67162N6716
2N6716 50 250
IC=500mA, VCE=1V 2N67162N6716
2N67162N6716
2N6716 20 -
Collector-Emitter Saturation Voltage
IC=1A, IB=100mA 2N6714/67152N6714/6715
2N6714/67152N6714/6715
2N6714/6715 VCE(sat) - 0.5 V
IC=250mA, IB=25mA 2N67162N6716
2N67162N6716
2N6716 - 0.35 V
Base Emitter on Voltage
IC=1A, VCE=1V 2N6714/67152N6714/6715
2N6714/67152N6714/6715
2N6714/6715 VBE(on) - 1.2 V
DYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Output Capacitance
VCB=10V, IE=0, ALLALL
ALLALL
ALL Cob -20pF
f=1MHz
Current-Gain-Bandwidth Product
IC=50mA, VCE=1V 2N6714/67162N6714/6716
2N6714/67162N6714/6716
2N6714/6716 fT50 500 MHz
2N67152N6715
2N67152N6715
2N6715 50 400 MHz
2N6714
2N6715
2N6716
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
