CMA80PD1600NA Thyristor VRRM = 2x 1600 V I TAV = 80 A VT = 1,29 V Phase leg Part number CMA80PD1600NA Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B (minibloc) Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA80PD1600NA Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25C 100 A TVJ = 125C 10 mA IT = TVJ = 25C 1,30 V 1,64 V 1,29 V IT = 80 A TVJ = 125 C 80 A I T = 160 A I TAV average forward current TC = 80 C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V VR/D = 1600 V I T = 160 A Ptot max. Unit 1700 V 1,72 V T VJ = 150 C 80 A 126 A TVJ = 150 C 0,86 V 5,5 m 0,45 K/W K/W 0,10 TC = 25C 270 W t = 10 ms; (50 Hz), sine TVJ = 45C 1,07 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1,16 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 910 A t = 8,3 ms; (60 Hz), sine VR = 0 V 980 A t = 10 ms; (50 Hz), sine TVJ = 45C 5,73 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 5,55 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 4,14 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 4,00 kAs 54 t P = 300 s pF 10 W 5 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = 240 A t P = 200 s; di G /dt = 0,3 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1,6 V I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA TVJ = -40 C 200 mA VGD gate non-trigger voltage TVJ = 150C 0,2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 450 mA IG = 0,3 A; V = VDRM non-repet., I T = 150 A/s 80 A 500 A/s 1000 V/s TVJ = 150C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0,3 A; di G /dt = 1,5 V 0,3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0,3 A; di G /dt = 0,3 A/s VR = 100 V; I T = 80 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA80PD1600NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 C -40 125 C 150 C 30 Weight g MD mounting torque 1,1 1,5 Nm MT terminal torque 1,1 1,5 Nm d Spp/App d Spb/Apb VISOL Product Marking 8,6 Logo C M A 80 PD 1600 NA XXXXX (R) Zyyww abcd Assembly Line DateCode Ordering Standard 50/60 Hz, RMS; IISOL 1 mA 3,2 mm 6,8 mm 3000 V 2500 V Part description Part No. = = = = = = = Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] SOT-227B (minibloc) Assembly Code Ordering Number CMA80PD1600NA Similar Part MCD40-16io6 Equivalent Circuits for Simulation V0 10,5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product CMA80PD1600NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 509041 Voltage class 1600 T VJ = 150 C Thyristor V 0 max threshold voltage 0,86 V R0 max slope resistance * 3,4 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA80PD1600NA Outlines SOT-227B (minibloc) 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 3 1 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b CMA80PD1600NA Thyristor 160 900 6000 50 Hz, 80% VRRM 140 VR = 0 V 5000 800 120 4000 100 IT 700 It TVJ = 45C ITSM 80 3000 2 600 [A] 60 [A s] [A] 40 125C 150C 20 TVJ = 45C 2 TVJ = 125C 2000 500 1000 TVJ = 125C TVJ = 25C 0 0,5 400 1,0 1,5 0 2,0 0,01 0,1 1 VT [V] t [ms] 1000 140 2 3 6 100 100 4 typ. tgd 1 IT(AV)M Limit 80 [A] 60 [s] [V] 10 40 TVJ = 125C 4: PGAV = 0.5 W IGD, TVJ = 125C 20 5: PGM = 5 W 6: PGM = 10 W 0,1 10 dc = 1 0.5 0.4 0.33 0.17 0.08 120 5 1 4 5 6 7 8 910 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 1 3 2 Fig. 2 Surge overload current 1: IGD, TVJ = 125C VG 2 t [s] Fig. 1 Forward characteristics 10 1 100 1000 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] Fig. 4 Gate trigger characteristics 75 100 125 150 TC [C] Fig. 5 Gate controlled delay time 160 50 Fig. 6 Max. forward current at case temperature 0,5 dc = 1 0.5 0.4 0.33 0.17 0.08 120 P(AV) RthHA 0.2 0.4 0.6 0.8 1.0 2.0 80 0,4 0,3 ZthJC [W] 0,2 [K/W] 40 0,1 0 0,0 0 20 40 60 80 100 IT(AV) [A] 50 100 150 Tamb [C] (c) 2015 IXYS all rights reserved 10 100 ti [s] 0.030 0.011 0.035 0.002 0.065 0.108 0.027 0.480 0.212 0.170 1000 10000 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 1 Rthi [K/W] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b