PHOTOTRANSISTOR Part Number: KM-4457P3C Description Features z Mechanically and spectrally matched to infrared emitting Made with NPN silicon phototransistor chips. LED lamp. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 1 OF 3 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801 Electrical / Optical Characteristics at TA=25C Symbol Parameter Min. VBR CEO Collector-to-Emitter Breakdown Voltage VBR ECO Emitter-to-Collector Breakdown Voltage VCE (SAT) Collector-to-Emitter Saturation Voltage Collector Dark Current I CEO Typ. Max. Units Test Conditions 30 V IC=100uA Ee=0mW/c 5 V IE=100uA Ee=0mW/c 0.8 V IC=2mA Ee=20mW/c 100 nA VCE=10V Ee=0mW/c TR Rise Time (10 to 90 ) 15 us TF Fall Time (90 to 10 ) 15 us 0.8 mA I (ON) On State Collector Current 0.35 VCE = 5V IC=1mA RL=1000 VCE = 5V Ee=1mW/c =940nm Absolute Maximum Ratings at TA=25C Parameter Max.Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25C Free Air Temperature 100mW Operating Temperature -40C To +85C Storage Temperature -40C To +85C 260C Lead Soldering Temperature (>5mm for 5sec) SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 2 OF 3 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801 PACKING & LABEL SPECIFICATIONS KM-4457P3C Detailed application notes are listed on our website. http://www.kingbright.com/application_notes SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 3 OF 3 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801