SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 1 OF 3
APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801
PHOTOTRANSISTOR
Part Number: KM-4457P3C
Features
zMechanically and spectrally matched to infrared emitting
LED lamp.
zRoHS compliant.
Description
Made with NPN silicon phototransistor chips.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.
SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 2 OF 3
APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801
Electrical / Optical Characteristics at TA=25°C
Absolute Maximum Ratings at TA=25° C
Symbol Parameter Min. Typ. Max. Units Test Conditions
VBR CEO Collector-to-Emitter Breakdown Voltage 30 V IC=100uA
Ee=0mW/c ㎡
VBR ECO Emitter-to-Collector Breakdown Voltage 5 V IE=100uA
Ee=0mW/c ㎡
VCE (SAT) Collector-to-Emitter Saturation Voltage 0.8 V IC=2mA
Ee=20mW/c ㎡
I CEO Collector Dark Current 100 nA VCE=10V
Ee=0mW/c ㎡
TR Rise Time (10％ to 90％ ) 15 us
VCE = 5V
IC=1mA
RL=1000Ω
TF Fall Time (90％ to 10％ ) 15 us
I (ON) On State Collector Current 0.35 0.8 mA
VCE = 5V
Ee=1mW/c ㎡
λ=940nm
Parameter Max.Ratings
Collector-to-Emitter Voltage 30V
Emitter-to-Collector Voltage 5V
Power Dissipation at (or below) 25°C Free Air Temperature 100mW
Operating Temperature -40°C To +85°C
Storage Temperature -40°C To +85°C
Lead Soldering Temperature (>5mm for 5sec) 260°C
SPEC NO: DSAB0353 REV NO: V.9 DATE: JAN/24/2013 PAGE: 3 OF 3
APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.Liu ERP: 1202001801
PACKING & LABEL SPECIFICATIONS KM-4457P3C
Detailed application notes are listed on our website.
http://www.kingbright.com/application_notes
